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Winbond Electronics Corporation W631GU6KS-15 TR

Part No.:
W631GU6KS-15 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-VFBGA
Datasheet:
AetrixW631GU6KS-15 TR.pdf
Description:
IC DRAM 1GBIT PAR 96VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,868

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Product details

Overview

W631GU6KS-15 TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35V nominal supply with DDR3L-1333 (9-9-9) timing, supporting CAS Latency 6/7/8/9/10 and programmable CWL 5–7. It delivers 1333 Mb/sec/pin data rates and is packaged in a RoHS-compliant 96-ball VFBGA (7.5 × 13 mm, 1.0 mm height) for space-constrained embedded memory subsystems.

For engineers reviewing the W631GU6KS-15 TR datasheet, W631GU6KS-15 TR pinout, W631GU6KS-15 TR application, or W631GU6KS-15 TR equivalent, key selection criteria include its industrial-grade temperature range (0°C to 95°C), 1.35V low-voltage operation with 1.5V backward compatibility, ZQ calibration support, dynamic on-die termination (Rtt_WR), and write leveling capability for high-signal-integrity DDR3L memory interfaces.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. It uses differential CK/CK# inputs synchronized at the crossing point and source-synchronous DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data.

The device supports programmable mode registers (MR0–MR3) for CAS Latency, additive latency, CWL, ODT configurations, PASR, ASR, and MPR-based system calibration. DLL alignment, asynchronous RESET#, and dual-mode ODT (synchronous/dynamic) are integral to its JEDEC-compliant DDR3L functionality.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 1 G-bit (8M words × 8 banks × 16 bits)
Data Rate DDR3L-1333: 1333 Mb/sec/pin (667 MHz clock)
Supply Voltage VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V
CAS Latency CL = 6, 7, 8, 9, 10 (supported per speed bin; CL9 standard for -15 grade)
CAS Write Latency CWL = 5, 6, 7 (CWL7 standard for DDR3L-1333 operation)
Operating Temp 0°C ≤ TCASE ≤ 95°C (commercial/industrial extended range)
Package VFBGA-96 (7.5 × 13 mm, 1.0 mm height, lead-free, RoHS)
Refresh Interval tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) with ASR/PASR support

Pinout & Package

W631GU6KS-15 TR is housed in a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.65 mm ball pitch, optimized for high-density PCB layouts and thermal performance in compact systems.

Pin/Terminal Circuit Role Design Meaning
CK / CK# Differential Clock Input Latches all command/address inputs at cross-point; defines timing reference for all operations
DQS / DQS# Differential Data Strobe Source-synchronous strobe: edge-aligned with read data, center-aligned with write data
RESET# Asynchronous Reset Input Initiates power-up initialization sequence and resets internal state machines
ODT On-Die Termination Control Enables/disables programmable termination resistors on DQ, DQS, DM pins during reads/writes
ZQ Calibration Reference Pin Connects to external 240 Ω ±1% resistor to ground for output driver and ODT impedance calibration
VREFCA / VREFDQ Reference Voltage Inputs VREFCA sets command/address threshold; VREFDQ sets data I/O threshold (0.5 × VDDQ)
A0–A12 / BA0–BA2 Address & Bank Select 13-bit row/column address + 3-bit bank address; A10 doubles as auto-precharge/AP command
RAS#, CAS#, WE#, CS# Command Control Inputs Standard DDR3 command encoding (ACT, READ, WRITE, PRE, REF, MRS)
DQ0–DQ15 / DMU / DML Data I/O & Mask 16-bit bidirectional data bus with upper/lower byte masks for partial writes

Key Features

Feature Design Value
Dynamic ODT (Rtt_WR) Programmable termination during write bursts improves signal integrity without external resistors
Write Leveling Calibrates DQS-to-CK skew at system level to ensure reliable write capture across voltage/temperature
Multi-Purpose Register (MPR) Reads predefined calibration pattern for system-level timing margin validation and setup optimization
ZQ Calibration One-time or periodic calibration of output drivers and ODT impedances using external 240 Ω reference
Partial Array Self-Refresh (PASR) Reduces self-refresh current by refreshing only active banks-critical for battery-powered applications
Auto Self-Refresh (ASR) Automatically extends refresh rate at high temperature (85°C–95°C), eliminating host intervention

Applications

Industrial HMI Controllers Network Edge Routers

Use Scenario: Real-time GUI rendering and multi-tasking OS execution in fanless panel PCs deployed in factory automation.

IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A9/A15 SoCs via 16-bit DDR3L bus with 667 MHz clock.

Use Value: 1.35V operation reduces system power by ~15% vs. 1.5V DDR3; PASR cuts self-refresh current to 14 mA for extended idle periods.

Use Scenario: Packet buffering and forwarding table storage in Layer 3 switches handling 1 GbE line-rate traffic.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory for network processor L2 cache coherency and buffer management.

Use Value: DDR3L-1333 timing (9-9-9) ensures deterministic tRCD/tRP <13.5 ns; dynamic ODT maintains clean write eye under varying load conditions.

Medical Imaging Terminals Automotive Infotainment Head Units

Use Scenario: DICOM image caching and DICOM workstation UI responsiveness in portable ultrasound devices.

IC Role / Device Role / Timing Role: Dual-rank memory subsystem supporting burst-intensive image decompression and display engine access.

Use Value: Write leveling and MPR calibration enable robust memory interface timing closure across -20°C to 70°C ambient ranges.

Use Scenario: Application runtime memory for Android Automotive OS in head units requiring AEC-Q200-aligned components.

IC Role / Device Role / Timing Role: Main memory for quad-core application processors running navigation, media, and vehicle telemetry stacks.

Use Value: Industrial temperature rating (0°C–95°C case) meets automotive cabin thermal requirements; 1.35V supply lowers thermal load on PMIC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT41K128M16JT-125:K 1 G-bit DDR3L, 96-ball VFBGA, DDR3L-1600 (11-11-11), CL11/CWL8; higher speed grade, tighter tAA min (13.125 ns) Requires higher clock frequency (800 MHz) and stricter board layout for signal integrity; not drop-in for -15 TR's 667 MHz design Select when system demands >1333 Mb/sec bandwidth and can support faster timing margins and higher VDDQ stability.
IS43TR16128B-15HBL 1 G-bit DDR3L, 96-ball VFBGA, DDR3L-1333 (9-9-9), CL9/CWL7; identical speed bin but different manufacturer-specific AC parameters and ZQ tolerance Validated for same industrial temp range; minor differences in tRFC and IDD6 max require revalidation of refresh scheduling and standby power budget Use as second-source alternative if Winbond supply constraints arise; verify SPD programming and MR2 settings for PASR/ASR behavior match.

Compared with W631GU6KS-15 TR, MT41K128M16JT-125:K enables higher throughput but increases timing closure complexity, while IS43TR16128B-15HBL offers functional equivalence with minor register-level configuration adjustments required for full JEDEC compliance.

Availability

W631GU6KS-15 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging terminals, and automotive infotainment head units requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W631GU6KS-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W631GU6KS-15 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-sensitive, thermally constrained embedded systems needing JEDEC-compliant low-voltage memory with extended temperature reliability.

FAQ

What is the maximum operating frequency supported by W631GU6KS-15 TR?

W631GU6KS-15 TR supports DDR3L-1333 operation with a maximum clock frequency of 667 MHz (tCK = 1.5 ns average), delivering 1333 Mb/sec/pin data transfer rates. Its speed bin (-15) is defined by JEDEC CL9-tRCD9-tRP9 timing, and it does not support higher bins like DDR3L-1600 or DDR3L-1866 without derating or non-compliant operation.

Does W631GU6KS-15 TR support both 1.35V and 1.5V VDD/VDDQ operation?

Yes, W631GU6KS-15 TR is fully backward compatible with 1.5V DDR3 systems. It operates within VDD/VDDQ = 1.283 V to 1.45 V at 1.35V nominal and supports 1.5V ± 0.075 V (1.425 V to 1.575 V) with validated AC/DC specifications, enabling seamless migration from legacy DDR3 designs.

How is ZQ calibration implemented on W631GU6KS-15 TR?

W631GU6KS-15 TR performs ZQ calibration via the dedicated ZQ pin connected to a 240 Ω ±1% external resistor to ground. The device executes ZQCL (ZQ calibration long) and ZQCS (ZQ calibration short) commands to calibrate output driver strength and ODT impedance values, ensuring consistent signal integrity across voltage and temperature variations.

What is the purpose of the MPR (Multi-Purpose Register) in W631GU6KS-15 TR?

The MPR in W631GU6KS-15 TR provides a predefined 128-bit read-only pattern used for system-level timing margin verification and write leveling calibration. When activated via MRS, it outputs a fixed bit sequence on DQ pins, allowing the controller to measure DQS-to-DQ skew and optimize sampling points without accessing actual memory contents.

Can W631GU6KS-15 TR operate in Partial Array Self-Refresh (PASR) mode?

Yes, W631GU6KS-15 TR supports PASR through MR2 configuration (bits A2–A0), allowing selective self-refresh of 1/2, 1/4, or 1/8 of the memory array. This feature reduces IDD6 current during idle periods-critical for battery-backed or energy-harvesting applications where minimizing standby power is essential.

W631GU6KS-15 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
1Gbit
Memory Organization:
64M x 16
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-VFBGA (7.5x13)

W631GU6KS-15 TR FAQ

1.How can I place an order for W631GU6KS-15 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GU6KS-15 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GU6KS-15 TR reliable?

The price and inventory of W631GU6KS-15 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6KS-15 TR is usually 5 days.

3.What payment methods are accepted for W631GU6KS-15 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6KS-15 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GU6KS-15 TR?

W631GU6KS-15 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GU6KS-15 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GU6KS-15 TR?

For technical support, including W631GU6KS-15 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6KS-15 TR requirements.

6.How does Aetrix verify that W631GU6KS-15 TR is sourced from the original manufacturer or authorized distributors?

All W631GU6KS-15 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6KS-15 TR meets industry standards.

7.What is the process for return or replacement of W631GU6KS-15 TR?

All W631GU6KS-15 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6KS-15 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GU6KS-15 TR part is unused and in its original packaging.

Return procedure for W631GU6KS-15 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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