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Winbond Electronics Corporation W631GU6MB-09
- Part No.:
- W631GU6MB-09
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6MB-09.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,297
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Product details
Overview
W631GU6MB-09 from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35 V nominal supply with DDR3L-2133 (14-14-14) timing, supporting CAS Latency up to CL=14 and CWL=10, and designed for high-bandwidth memory subsystems in industrial computing and embedded controllers.
For engineers reviewing the W631GU6MB-09 datasheet, W631GU6MB-09 pinout, W631GU6MB-09 application, or W631GU6MB-09 equivalent, this device requires attention to its VFBGA-96 package, differential clock/strobe interface, ZQ calibration support, and temperature-rated operation up to 95°C case temperature.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access and interleaved burst operations. It supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, and dynamic on-die termination (Rtt_WR) for signal integrity during high-speed writes.
The device features asynchronous RESET# for power-up initialization and reset, DLL alignment of DQ/DQS to CK/CK#, and system-level calibration via write leveling and Multi-Purpose Register (MPR) readout. It complies fully with JEDEC DDR3L standards including ZQ calibration, PASR, ASR, and differential input/output timing requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8,388,608 words × 8 banks × 16 bits) |
| Data Rate | 2133 MT/s (DDR3L-2133, tCK = 0.938 ns min) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V |
| CAS Latency | Configurable CL = 5–14; CL = 14 supported at DDR3L-2133 speed grade |
| CAS Write Latency | Configurable CWL = 5–10; CWL = 10 required for CL = 14 at 2133 MT/s |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (commercial/industrial extended range) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; 3.9 µs at 85–95°C (doubled refresh rate) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and Window BGA construction. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, CK/CK#, DQS/DQS#, DM, and command/address groups.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs; A10 used for auto-precharge control |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK / CK# | Differential Clock | Edge-triggered command latch point; defines all timing windows |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; source-synchronous with DQS/DQS# |
| DQS / DQS# | Differential Strobe | Center-aligned with write data; edge-aligned with read data |
| DM | Data Mask | Per-byte mask for write operations; active-high, sampled on DQS rising edge |
| RESET# | Asynchronous Reset | Active-low; initiates power-up initialization sequence and functional reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of Rtt_NOM/Rtt_WR termination resistors |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (e.g., ACTIVE = /RAS low, /CAS high, /WE high) |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5–10; enables precise write timing alignment across frequency bins |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω ±1% resistor to ground for output driver and ODT impedance tuning |
| Dynamic On-Die Termination (Rtt_WR) | Enables on-the-fly ODT activation during write bursts only, reducing standby power and improving signal integrity |
| Multi-Purpose Register (MPR) | Provides predefined 128-bit calibration pattern for system-level timing margin verification without memory access |
| Write Leveling Support | Allows controller to adjust DQS launch delay relative to CK to compensate for board skew and package mismatch |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, lowering IDD6 under partial workload conditions |
Applications
| Industrial HMI Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time GUI rendering and multi-threaded protocol stack execution in fanless panel PCs. IC Role / Device Role / Timing Role: Primary system memory buffer with DDR3L-2133 bandwidth and 95°C thermal tolerance. Use Value: Enables sustained 1.7 GB/s read/write throughput while maintaining JEDEC compliance under extended temperature cycling. |
Use Scenario: Packet buffering and forwarding table storage in compact Layer 3 switches. IC Role / Device Role / Timing Role: High-reliability, low-power DRAM for packet queue management with dynamic ODT optimization. Use Value: Reduces signal reflection on dense PCB layouts via Rtt_WR activation only during write bursts, improving bit error rate at 2133 MT/s. |
| Medical Imaging Gateways | Automated Test Equipment (ATE) |
Use Scenario: DICOM image caching and real-time DICOM-to-HTTP transcoding in portable diagnostic devices. IC Role / Device Role / Timing Role: Low-voltage (1.35 V) memory subsystem supporting burst-intensive imaging pipelines. Use Value: Delivers 2133 MT/s performance with 15% lower power vs. standard DDR3, extending battery life in mobile platforms. |
Use Scenario: High-speed waveform capture and pattern generation in modular PXI chassis. IC Role / Device Role / Timing Role: Timing-critical memory for deterministic data acquisition with write leveling calibration. Use Value: Ensures sub-nanosecond DQS-to-DQ alignment across temperature and voltage variation via MPR-assisted calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125:K (Micron) | Same density and VFBGA-96 package; supports DDR3L-1600 only (CL=11, tCK=1.25 ns); no PASR or ASR support | Limited to 1600 MT/s; lacks extended temperature self-refresh modes and dynamic ODT | Choose when cost sensitivity outweighs need for 2133 MT/s or extended thermal operation. |
| IS43TR16128B-125KBL (ISSI) | DDR3L-1600 rated; identical 1G-bit ×16 organization and VFBGA-96; supports CL=11 only; no write leveling or MPR | No system-level calibration features; not qualified for >85°C case temperature | Select for legacy designs requiring drop-in replacement where 2133 MT/s and industrial temperature are not required. |
Compared with MT41K128M16JT-125:K and IS43TR16128B-125KBL, W631GU6MB-09 delivers higher bandwidth (2133 vs. 1600 MT/s), broader CL/CWL flexibility, full PASR/ASR support, and validated operation up to 95°C - making it suitable for thermally constrained, high-throughput embedded systems where timing margin and power efficiency are critical.
Availability
W631GU6MB-09 is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, and medical imaging gateways requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3L performance.
Supply support for W631GU6MB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU6MB series belongs to Winbond's DDR3L SDRAM product line, engineered for energy-efficient, thermally robust memory subsystems in space-constrained embedded applications demanding JEDEC compliance and extended temperature reliability.
FAQ
What is the maximum data rate supported by W631GU6MB-09?
W631GU6MB-09 supports DDR3L-2133 operation at 2133 MT/s, corresponding to a minimum clock period (tCK) of 0.938 ns. This speed grade is validated with CL=14 and CWL=10 under 1.35 V supply and 0°C to 95°C case temperature conditions per JEDEC specification.
Does W631GU6MB-09 support backward compatibility with standard DDR3 (1.5 V) systems?
Yes, W631GU6MB-09 is backward compatible with 1.5 V DDR3 systems. It operates within VDD/VDDQ = 1.5 V ± 0.075 V and maintains full AC/DC functionality, including timing parameters and command set, when supplied at 1.5 V - enabling seamless migration from legacy DDR3 designs.
How does the ZQ calibration function work in W631GU6MB-09?
W631GU6MB-09 performs ZQ calibration using an external 240 Ω ±1% precision resistor connected between ZQ pin and VSS. The internal circuitry measures this reference to calibrate output driver strength and on-die termination (ODT) impedances, ensuring consistent signal integrity across voltage and temperature variations.
What is the purpose of the Multi-Purpose Register (MPR) in W631GU6MB-09?
The MPR in W631GU6MB-09 provides a predefined 128-bit calibration pattern accessible via READ commands. It enables system-level timing margin testing without actual memory access, supporting reliable write leveling and DQS-to-clock alignment verification during board bring-up and validation.
Is W631GU6MB-09 qualified for operation above 85°C case temperature?
Yes, W631GU6MB-09 is qualified for 0°C ≤ TCASE ≤ 95°C. At temperatures above 85°C, it requires doubled refresh rate (tREFI = 3.9 µs) and must use either Manual Self-Refresh with Extended Temperature Range (MR2[7:6] = 0b01) or Auto Self-Refresh (ASR) mode (MR2[7:6] = 0b1x) to maintain data retention.
W631GU6MB-09 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6MB-09 FAQ
1.How can I place an order for W631GU6MB-09 through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6MB-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6MB-09 reliable?
The price and inventory of W631GU6MB-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6MB-09 is usually 5 days.
3.What payment methods are accepted for W631GU6MB-09?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6MB-09 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6MB-09?
W631GU6MB-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6MB-09 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6MB-09?
For technical support, including W631GU6MB-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6MB-09 requirements.
6.How does Aetrix verify that W631GU6MB-09 is sourced from the original manufacturer or authorized distributors?
All W631GU6MB-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6MB-09 meets industry standards.
7.What is the process for return or replacement of W631GU6MB-09?
All W631GU6MB-09 units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6MB-09, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6MB-09 part is unused and in its original packaging.
Return procedure for W631GU6MB-09:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6MB-09 Tags
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M24C02-WMN6TP
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