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Winbond Electronics Corporation W631GU6MB-11
- Part No.:
- W631GU6MB-11
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6MB-11.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,846
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Product details
Overview
W631GU6MB-11 from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35 V nominal supply with DDR3L-1866 (13-13-13) speed grade. It supports CAS Latency 5–13, programmable CWL, and eight internal banks for concurrent access. Used in embedded computing, industrial controllers, and network edge devices requiring low-voltage memory with JEDEC-compliant timing.
For engineers reviewing the W631GU6MB-11 datasheet, W631GU6MB-11 pinout, W631GU6MB-11 application, or W631GU6MB-11 equivalent, key selection considerations include its 1.35 V operation, -40°C to +95°C industrial temperature range, VFBGA-96 package, ZQ calibration support, and dynamic ODT capability for signal integrity in high-speed DDR interfaces.
Technical Context
The W631GU6MB-11 implements a double-data-rate architecture with 8-bit prefetch, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes center-aligned on write and edge-aligned on read. Its DLL aligns DQ and DQS transitions to CK, enabling stable 1866 MT/s transfers under 1.35 V.
It supports programmable mode registers (MR0–MR3) for CAS Latency, additive latency, PASR, ASR, dynamic ODT (Rtt_WR), and write leveling. The asynchronous RESET# pin enables deterministic power-up initialization and runtime reset independent of clock state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8M words × 8 banks × 16 bits) |
| Data Rate | 1866 MT/s (DDR3L-1866, CL=13, tCK = 1.07 ns min) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V; backward compatible to 1.5 V ± 0.075 V |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (industrial grade) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS/lead-free) |
| CAS Latency Range | CL = 5, 6, 8, 10, 13 (JEDEC-compliant for DDR3L-1866) |
| CAS Write Latency | CWL = 5, 6, 7, 9 (supports frequency-synchronized write timing) |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C); 3.9 µs (85°C–95°C, requires ASR or Manual Self-Refresh) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free finish. Ball map defined per JEDEC MO-270DA standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs for bank and page access; multiplexed with BA0–BA2 for bank select |
| BA0–BA2 | Bank Address | Selects one of eight internal banks; latched with A0–A14 on ACT command |
| CK, CK# | Differential Clock | Edge-sensitive input pair; commands latched at rising CK/falling CK# crossing point |
| CS#, RAS#, CAS#, WE# | Command Signals | Active-low command bus; decoded synchronously to CK/CK# to generate internal operations |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; referenced to DQS/DQS# for DDR timing |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data |
| DM0–DM1 | Data Mask | Per-byte write mask (DM0 for DQ0–7, DM1 for DQ8–15); suppresses masked write data |
| RESET# | Asynchronous Reset | Active-low pin forcing power-up initialization sequence or runtime reset regardless of clock state |
| ODT | On-Die Termination Control | Dynamic enable/disable of termination resistors on DQ/DQS/DM lines during reads/writes |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1 % resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Enables precise write timing alignment across frequencies (CWL = 5, 6, 7, 9 for DDR3L-1866) |
| Dynamic On-Die Termination (Rtt_WR) | Activates ODT only during write bursts, reducing standby power and improving signal integrity on shared DQ buses |
| Write Leveling Support | Calibrates DQS-to-CK skew at system level using MPR-read pattern and feedback loop, critical for timing closure at 1866 MT/s |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, extending battery life in portable industrial systems |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor ensures consistent 34 Ω output drive and ODT impedance over voltage/temperature |
| Multi-Purpose Register (MPR) | Provides predefined 128-bit calibration pattern for system-level timing margin analysis without disturbing memory contents |
Applications
| Industrial PLC Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time logic execution and I/O buffering in programmable logic controllers deployed in factory automation environments with ambient temperatures up to 95°C. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and process data storage; operates in burst read/write mode with auto-precharge and dynamic ODT enabled. Use Value: DDR3L-1866 bandwidth meets deterministic scan cycle timing; 1.35 V supply reduces thermal load in sealed enclosures while maintaining JEDEC compliance. | Use Scenario: Packet buffering and forwarding table storage in compact Layer 3 edge routers handling 1 Gbps Ethernet traffic. IC Role / Device Role / Timing Role: High-throughput data buffer interfacing with MAC controllers via 16-bit DDR interface; uses write leveling and MPR for signal integrity validation. Use Value: 1866 MT/s transfer rate sustains line-rate packet processing; VFBGA-96 footprint enables dense PCB layout with minimal trace length mismatch. |
| Medical Imaging Gateways | Smart Energy Meters |
Use Scenario: DICOM image caching and preprocessing in portable ultrasound gateways requiring reliable operation across medical-grade temperature ranges. IC Role / Device Role / Timing Role: Frame buffer and algorithm scratchpad memory; leverages PASR to minimize self-refresh current during idle imaging intervals. Use Value: 0°C to 95°C rating ensures stability during clinical use; ZQ calibration maintains signal fidelity across varying board temperatures during long acquisition sessions. | Use Scenario: Firmware execution and tariff logging in ANSI C12.22-compliant smart meters deployed in outdoor utility cabinets. IC Role / Device Role / Timing Role: Non-volatile program memory supplement; operates in low-power precharged power-down mode between metering cycles. Use Value: DDR3L-1866 speed allows fast firmware updates over PLC; 1.35 V operation extends battery backup duration during AC mains failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125:A | 1 G-bit DDR3L, 1866 MT/s, VFBGA-96, but rated -40°C to +95°C with extended voltage tolerance (1.283–1.45 V same); supports CL=11,13,14 only | Same industrial temperature range; differs in supported CL/CWL combinations and refresh behavior above 85°C | Prefer W631GU6MB-11 when CL=5/6/8/10 support or PASR usage is required; choose Micron part if tighter tRCD/tRP consistency needed at 1.283 V |
| IS43TR16128B-125KBL | 1 G-bit DDR3L, 1866 MT/s, VFBGA-96, -40°C to +95°C, but uses different ZQ reference (240 Ω ±0.5 %) and lacks MPR functionality | Compatible pinout and timing, but no MPR-based calibration or write leveling support | Choose W631GU6MB-11 for designs requiring system-level timing margin validation; select ISSI part where simplified calibration flow suffices |
Compared with MT41K128M16JT-125:A and IS43TR16128B-125KBL, the W631GU6MB-11 uniquely combines full CL/CWL flexibility, PASR, MPR, and write leveling in a single industrial-grade DDR3L device-enabling robust timing closure and power optimization without trade-offs in feature set.
Availability
W631GU6MB-11 is available at Aetrix Electronics and suitable for industrial PLC controllers, network edge routers, medical imaging gateways, and smart energy meters requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for W631GU6MB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR/NAND Flash, DDR SDRAM, and mobile RAM products.
The W631GU6MB-11 belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant signal integrity features like ZQ calibration and dynamic ODT.
FAQ
What is the maximum operating frequency of the W631GU6MB-11?
The W631GU6MB-11 is rated for DDR3L-1866 operation, supporting up to 1866 MT/s with tCK = 1.07 ns minimum. This corresponds to a maximum clock frequency of 933 MHz (half of data rate). Its AC timing parameters-including tRCD, tRP, and tRC-are validated at this speed grade under 1.283–1.45 V and 0°C to 95°C conditions per JEDEC specification.
Does the W631GU6MB-11 support backward compatibility with standard 1.5 V DDR3 systems?
Yes, the W631GU6MB-11 supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L) and is fully backward compatible with 1.5 V ± 0.075 V DDR3 systems. Both VDD and VDDQ must be supplied at the same voltage level; switching between 1.35 V and 1.5 V requires reinitialization but no hardware changes.
How does the W631GU6MB-11 handle temperature-dependent refresh requirements above 85°C?
Above 85°C, the W631GU6MB-11 requires doubled refresh frequency (tREFI = 3.9 µS instead of 7.8 µS). This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 bit A6 or entering Manual Self-Refresh mode. The -11 speed grade supports this up to 95°C, and the device remains fully functional without timing derating.
What is the role of the ZQ pin on the W631GU6MB-11 and what external component is required?
The ZQ pin on the W631GU6MB-11 connects to an external 240 Ω ±1 % precision resistor to ground. It enables on-die calibration of output driver strength and ODT impedance to maintain 34 Ω accuracy across voltage and temperature variations. Calibration occurs at power-up and can be triggered manually via ZQCL command.
Can the W631GU6MB-11 operate with CAS Latency 7 at DDR3L-1866 speed?
No-the W631GU6MB-11 does not support CL=7 at DDR3L-1866. Per its datasheet, the -11 speed grade supports CL = 5, 6, 8, 10, and 13 only. CL=7 is reserved for lower-speed grades (-12/-15) and is explicitly excluded from DDR3L-1866 timing tables and Sup_CL listings.
W631GU6MB-11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6MB-11 FAQ
1.How can I place an order for W631GU6MB-11 through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6MB-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6MB-11 reliable?
The price and inventory of W631GU6MB-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6MB-11 is usually 5 days.
3.What payment methods are accepted for W631GU6MB-11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6MB-11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6MB-11?
W631GU6MB-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6MB-11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6MB-11?
For technical support, including W631GU6MB-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6MB-11 requirements.
6.How does Aetrix verify that W631GU6MB-11 is sourced from the original manufacturer or authorized distributors?
All W631GU6MB-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6MB-11 meets industry standards.
7.What is the process for return or replacement of W631GU6MB-11?
All W631GU6MB-11 units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6MB-11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6MB-11 part is unused and in its original packaging.
Return procedure for W631GU6MB-11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6MB-11 Tags
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