Winbond Electronics Corporation W631GU6MB11I

Overview

W631GU6MB11I from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35 V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-1866 speed grade (13-13-13 CL/tRCD/tRP), and delivering 1866 MT/s data rates for embedded computing and networking memory subsystems.

For engineers reviewing the W631GU6MB11I datasheet, W631GU6MB11I pinout, W631GU6MB11I application, or W631GU6MB11I equivalent, this page provides verified timing parameters, ball configuration, ODT control behavior, ZQ calibration support, and industrial-grade thermal validation - all critical for DDR3L interface design, signal integrity planning, and JEDEC-compliant layout implementation.

Technical Context

The W631GU6MB11I implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with DLL-aligned DQS/DQS# strobes for source-synchronous read/write operations. It supports programmable CAS Latency (CL = 5–13), additive latency (AL = 0, CL−1, CL−2), and CAS Write Latency (CWL = 5–7) per frequency bin.

It features on-die termination (ODT) with synchronous and dynamic modes, ZQ calibration using external 240 Ω resistor, multi-purpose register (MPR) for system-level timing calibration, and write leveling for per-lane DQ-to-DQS skew compensation - all essential for high-speed DDR3L channel tuning in constrained PCB environments.

Key Specifications

Pinout & Package

VFBGA-96 package with 0.8 mm ball pitch, 7.5 mm × 13 mm footprint, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3L pinout for address/command/data/strobe/termination signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M16JT-125:K and IS43TR16128B-125KBL, the W631GU6MB11I offers broader CAS Latency flexibility (CL=13 supported), explicit ZQ calibration control for tighter impedance tolerance, and native 1.35 V operation without VDDQ scaling - making it preferable for thermally constrained, high-reliability DDR3L designs requiring precise signal integrity tuning.

Availability

W631GU6MB11I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for W631GU6MB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU6MB11I belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant low-voltage memory with industrial-grade reliability and flexible timing configuration.

FAQ

What is the maximum data rate supported by the W631GU6MB11I?

The W631GU6MB11I supports DDR3L-1866 operation at 1866 MT/s, corresponding to a 933 MHz differential clock frequency. This speed grade is validated across the full industrial temperature range (–40°C to +95°C) and requires CL=13, tRCD=13, and tRP=13 timing parameters per JEDEC specification. The W631GU6MB11I achieves this rate using its 8-bank architecture and DLL-synchronized DQS strobes.

Does the W631GU6MB11I support both 1.35 V and 1.5 V operation?

Yes, the W631GU6MB11I is fully backward compatible with standard DDR3 1.5 V operation (±75 mV), while being optimized for DDR3L 1.35 V nominal supply (1.283–1.45 V range). Dual-voltage support allows seamless migration from legacy DDR3 designs and simplifies qualification in mixed-voltage systems. The W631GU6MB11I maintains full AC/DC specifications at both voltage levels within its rated temperature range.

How does write leveling work on the W631GU6MB11I?

Write leveling on the W631GU6MB11I uses the Multi-Purpose Register (MPR) to output a predefined training pattern while the memory controller adjusts per-lane DQ delay until DQS edge aligns with DQ valid window. This process compensates for PCB trace length mismatches and ensures reliable write setup/hold timing at 1866 MT/s. The W631GU6MB11I implements full JEDEC-compliant write leveling protocol with dedicated MPR address and timing definitions.

What package type and ball count does the W631GU6MB11I use?

The W631GU6MB11I uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. This JEDEC-standard footprint matches other DDR3L SDRAMs in the same density class and supports automated assembly with standard reflow profiles. The W631GU6MB11I's VFBGA-96 layout includes dedicated ZQ, RESET#, and ODT pins for full DDR3L feature implementation.

Is the W631GU6MB11I suitable for automotive applications?

The W631GU6MB11I is rated for industrial temperature (–40°C to +95°C) and meets JEDEC DDR3L standards, but it is not AEC-Q200 qualified or specified for automotive under-hood use. It is appropriate for automotive ADAS camera modules, infotainment head units, and telematics gateways operating within controlled cabin environments. For under-hood or safety-critical domains, Winbond's automotive-grade variants (e.g., W631GU6MB11J with 105°C rating) should be evaluated instead of the W631GU6MB11I.