Winbond Electronics Corporation W631GU6MB11I TR

Overview

W631GU6MB11I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3L-1866 (13-13-13) operation at 933 MHz clock frequency, 1.35 V nominal supply, and industrial temperature range (–40°C to +95°C); it delivers 3.0 GB/s peak bandwidth in dual-channel configurations and is used in embedded networking, industrial HMIs, and edge AI inference modules requiring low-voltage memory with JEDEC-compliant timing.

For engineers reviewing the W631GU6MB11I TR datasheet, W631GU6MB11I TR pinout, W631GU6MB11I TR application, or W631GU6MB11I TR equivalent, key selection considerations include CAS Latency support (CL=5–13), programmable CWL (5–7), ZQ calibration capability, on-die termination (RTT_NOM/RTT_WR), and industrial-grade thermal reliability up to 95°C case temperature.

Technical Context

This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe interface (DQS/DQS#). It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization during high-throughput read/write bursts.

Functional features include asynchronous RESET#, dynamic ODT for write signal integrity, multi-purpose register (MPR) for system-level timing calibration, and write leveling for per-lane skew compensation. Power management includes precharged power-down, active power-down, self-refresh, and partial array self-refresh (PASR) modes.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with IS43TR16128B-125KBL and MT41K128M16HA-125:E, the W631GU6MB11I TR offers higher DDR3L-1866 bandwidth, integrated PASR/ASR for extended temperature operation, and native write leveling-making it optimal for thermally constrained, high-throughput embedded systems where timing margin and power efficiency are critical.

Availability

W631GU6MB11I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, and AI inference accelerators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6MB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM products for industrial, automotive, and communications markets.

The W631GU6MB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems demanding reliable low-voltage memory operation under wide temperature variation and stringent JEDEC compliance.

FAQ

What is the maximum operating frequency supported by W631GU6MB11I TR?

The W631GU6MB11I TR supports DDR3L-1866 operation with a maximum clock frequency (fCK) of 933 MHz, corresponding to a 1.07 ns average clock period at CL=13/CWL=7. This speed grade is fully characterized across the industrial temperature range (–40°C to +95°C) per JEDEC JESD79-3F specification.

Does W631GU6MB11I TR support both 1.35 V and 1.5 V operation?

Yes, W631GU6MB11I TR is backward compatible with standard DDR3 1.5 V operation (VDD/VDDQ = 1.5 V ±0.075 V) while being optimized for DDR3L 1.35 V operation (1.283 V to 1.45 V). The device automatically adapts timing parameters based on supply voltage and does not require hardware configuration changes between modes.

How does the write leveling function work in W631GU6MB11I TR?

W631GU6MB11I TR implements JEDEC-compliant write leveling using its MPR and dedicated command sequences. During initialization, the memory controller asserts DQS while reading back a known MPR pattern to measure DQS-to-CK skew per lane, then adjusts delay elements to center DQ valid windows-ensuring robust 1866 MT/s write capture without manual calibration.

What power-saving features are available in W631GU6MB11I TR?

W631GU6MB11I TR provides multiple power-saving mechanisms: precharged and active power-down modes reduce dynamic current during idle cycles; self-refresh and auto self-refresh (ASR) maintain data retention at low IDD6 (≤10 mA); and partial array self-refresh (PASR) cuts refresh current by limiting refresh to active banks only-critical for battery-backed or thermally limited systems.

Is W631GU6MB11I TR pin-compatible with other Winbond DDR3L devices?

W631GU6MB11I TR uses a standardized 96-ball VFBGA package (7.5 mm × 13 mm) with JEDEC-compliant ball assignment. It is pin-compatible with other members of the W631GU6MB family (e.g., W631GU6MB-11, W631GU6MB11J) and shares identical ball mapping with Winbond's W631GU6KB series-enabling drop-in replacement within same speed/temperature grade and layout reuse across variants.