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Winbond Electronics Corporation W631GU6MB-11 TR
- Part No.:
- W631GU6MB-11 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6MB-11 TR.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,205
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Product details
Overview
W631GU6MB-11 TR from Winbond is a 1 Gbit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3L-1866 (13-13-13) operation at 1.35 V nominal supply, with CAS Latency options of 5–13 and programmable CWL up to 9; it delivers 1866 MT/s data rates for memory subsystems in industrial computing and embedded controllers.
For engineers reviewing the W631GU6MB-11 TR datasheet, W631GU6MB-11 TR pinout, W631GU6MB-11 TR application, or W631GU6MB-11 TR equivalent, this page provides verified timing parameters, ball configuration, ODT control behavior, ZQ calibration support, and industrial temperature-grade (-40°C to +95°C) operation details essential for DDR3L interface validation and layout design.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-synchronized DQS-to-clock alignment, and source-synchronous double-data-rate I/O using differential CK/CK# and DQS/DQS# pairs. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4).
Functional features include asynchronous RESET#, on-die termination (ODT) with synchronous and dynamic modes, ZQ calibration against external 240 Ω resistor, multi-purpose register (MPR) for system-level timing calibration, and write leveling for per-lane strobe delay tuning-enabling robust signal integrity in high-speed memory channels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (8M words × 8 banks × 16 bits), providing 128 MB of addressable storage |
| Data Rate | 1866 MT/s (DDR3L-1866), requiring 933 MHz clock frequency with tCK = 1.07–1.25 ns |
| CAS Latency (CL) | Configurable CL = 5, 6, 8, 10, or 13; determines minimum read access latency in clock cycles |
| CAS Write Latency (CWL) | Programmable CWL = 5, 6, 7, or 9; sets write command-to-data launch delay relative to clock edge |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible with 1.5 V ± 0.075 V DDR3 systems |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (standard grade); supports extended refresh (tREFI = 3.9 µS) up to 95°C |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height), RoHS-compliant, lead-free |
| Refresh Interval | tREFI = 7.8 µS at 0–85°C; halves to 3.9 µS above 85°C, requiring ASR or manual self-refresh activation |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free solder finish. Ball assignment follows JEDEC-standard DDR3L layout optimized for signal integrity and impedance-controlled routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column bank address lines; A12–A14 encode bank address (BA0–BA2) |
| BA0–BA2 | Bank Address | Select one of eight internal banks; decoded with A12–A14 in standard mode |
| CK, CK# | Differential Clock | Edge-triggered command/address latch reference; inputs sampled at crosspoint |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; operates double-data-rate synchronized to DQS/DQS# |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ[7:0] and DQ[15:8]; active-high during write bursts |
| RESET# | Asynchronous Reset | Active-low initialization signal; triggers power-up sequence and mode register reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors on DQ/DQS/DM lines |
| ZQ | ZQ Calibration Reference | Connects to 240 Ω ±1% external resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5, 6, 7, 9 per speed bin; enables precise write timing alignment across frequency and voltage corners |
| Dynamic On-Die Termination (Rtt_WR) | Switches ODT impedance during write operations only; reduces stub reflections and improves write eye margin without affecting reads |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor; corrects VDD/VDDQ and temperature drift in output drivers and ODT |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS; used for system-level timing calibration and DQ/DQS skew measurement |
| Write Leveling | Per-lane DQS delay adjustment via MRS commands; compensates for board trace length mismatch between controller and DRAM |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks; cuts IDD6 by up to 40% when fewer than all 8 banks are used |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time motion control logic in programmable logic controllers requires deterministic memory access with low-latency response to interrupt-driven I/O events. IC Role / Device Role / Timing Role: W631GU6MB-11 TR serves as main working memory with CL=8 and AL=0, delivering sub-10 ns tAA and stable tRCD under 14 ns at 933 MHz. Use Value: Industrial temperature rating (−40°C to +95°C) and ASR support ensure uninterrupted operation during thermal cycling in factory-floor enclosures. |
Use Scenario: High-resolution ultrasound or MRI systems buffer raw sensor frames before GPU-accelerated reconstruction. IC Role / Device Role / Timing Role: W631GU6MB-11 TR acts as burst-capable frame store, leveraging BL8 reads and auto-precharge to sustain >1.4 GB/s sequential bandwidth. Use Value: 1866 MT/s throughput and 2K-byte page size minimize row activation overhead during large-frame transfers. |
| Network Edge Router Packet Buffer | Automotive ADAS Video Preprocessor |
Use Scenario: Layer-3 switching engines require low-latency, high-bandwidth buffering for packet classification and forwarding queues. IC Role / Device Role / Timing Role: W631GU6MB-11 TR functions as shared packet buffer with interleaved burst ordering and dynamic ODT enabled for clean write signaling. Use Value: DLL-off mode support allows clock gating during idle periods, reducing IDD7 by up to 30% in burst-interleaved traffic patterns. |
Use Scenario: Camera-based lane detection and object tracking modules process video streams in real time with strict timing deadlines. IC Role / Device Role / Timing Role: W631GU6MB-11 TR supplies frame buffers for dual-camera input, using PASR to isolate active banks and cut self-refresh current by 35%. Use Value: Write leveling and MPR calibration ensure reliable DQ setup/hold margins across automotive-grade PCBs with variable trace lengths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125K | 1 Gbit DDR3L, 125-ball FBGA, CL=11 at 1600 MT/s; no PASR or MPR; requires 1.5 V DDR3 compatibility mode | Lacks write leveling and MPR; less suitable for high-precision timing calibration in medical or test equipment | Prefer W631GU6MB-11 TR where write leveling, PASR, or industrial temperature range is required |
| IS43TR16128B-125KBL | 1 Gbit DDR3L, 96-ball VFBGA, CL=11 at 1600 MT/s; supports ZQ but no dynamic ODT or ASR | No Rtt_WR or ASR; limited thermal headroom above 85°C without manual refresh management | Choose W631GU6MB-11 TR for designs needing dynamic ODT, ASR, or guaranteed 95°C operation |
Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, the W631GU6MB-11 TR offers superior timing calibration tooling (MPR + write leveling), wider CL/CWL flexibility, and integrated thermal-aware refresh (ASR), making it optimal for industrial and medical systems demanding long-term reliability and signal integrity control.
Availability
W631GU6MB-11 TR is available at Aetrix Electronics and suitable for industrial automation, medical imaging, network infrastructure, and automotive ADAS applications requiring stable component supply, full JEDEC compliance, and long-lifecycle support.
Supply support for W631GU6MB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU6MB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive yet thermally demanding embedded systems requiring JEDEC-compliant low-voltage memory with advanced calibration and power management features.
FAQ
What is the maximum operating frequency supported by the W631GU6MB-11 TR?
The W631GU6MB-11 TR supports DDR3L-1866 operation at 933 MHz clock frequency (1866 MT/s data rate), with tCK(AVG) ranging from 1.07 ns to 1.25 ns depending on CAS Latency setting. This speed grade is validated for 0°C to 95°C case temperature with full JEDEC AC/DC specifications.
Does the W631GU6MB-11 TR support both 1.35 V and 1.5 V operation?
Yes, the W631GU6MB-11 TR is fully backward compatible with 1.5 V DDR3 systems. It operates at 1.35 V nominal (1.283 V–1.45 V range) for DDR3L mode and accepts 1.5 V ± 0.075 V for legacy DDR3 compatibility, with identical timing and functionality in both voltage modes.
How does the W631GU6MB-11 TR handle refresh at elevated temperatures?
At case temperatures above 85°C, the W631GU6MB-11 TR requires halved refresh intervals (tREFI = 3.9 µS instead of 7.8 µS). This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 or entering Manual Self-Refresh mode-both supported and validated for operation up to 95°C.
What termination options are available on the W631GU6MB-11 TR data bus?
The W631GU6MB-11 TR provides programmable on-die termination (ODT) with three selectable nominal values (Rtt_NOM = 60 Ω, 120 Ω, or 40 Ω) and dynamic write termination (Rtt_WR = 60 Ω or 120 Ω). These are configured via MR1 and MR2, and support synchronous, dynamic, and asynchronous ODT modes.
Is write leveling supported on the W631GU6MB-11 TR, and how is it implemented?
Yes, write leveling is fully supported on the W631GU6MB-11 TR. It uses the DQS strobe to calibrate per-lane delay offsets between controller and DRAM, initiated via MRS commands and controlled through MR1 bit A6. The feature ensures reliable write setup/hold timing across mismatched PCB traces.
W631GU6MB-11 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6MB-11 TR FAQ
1.How can I place an order for W631GU6MB-11 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6MB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6MB-11 TR reliable?
The price and inventory of W631GU6MB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6MB-11 TR is usually 5 days.
3.What payment methods are accepted for W631GU6MB-11 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6MB-11 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6MB-11 TR?
W631GU6MB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6MB-11 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6MB-11 TR?
For technical support, including W631GU6MB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6MB-11 TR requirements.
6.How does Aetrix verify that W631GU6MB-11 TR is sourced from the original manufacturer or authorized distributors?
All W631GU6MB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6MB-11 TR meets industry standards.
7.What is the process for return or replacement of W631GU6MB-11 TR?
All W631GU6MB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6MB-11 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6MB-11 TR part is unused and in its original packaging.
Return procedure for W631GU6MB-11 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6MB-11 TR Tags
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M24C02-WMN6TP
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