Winbond Electronics Corporation W631GU6MB12I
- Part No.:
- W631GU6MB12I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6MB12I.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 96VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W631GU6MB12I from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35 V nominal supply with industrial temperature range (–40°C to +95°C), compliant with DDR3L-1600 (11-11-11) timing, and packaged in a 96-ball VFBGA (7.5 × 13 mm). It delivers 1600 MT/s data rates for memory subsystems in embedded controllers, networking edge devices, and industrial HMIs.
For engineers reviewing the W631GU6MB12I datasheet, W631GU6MB12I pinout, W631GU6MB12I application, or W631GU6MB12I equivalent, key selection considerations include its DDR3L-1600 speed bin, industrial-grade thermal rating, programmable CAS latency (CL = 5–11), on-die termination (ODT), ZQ calibration support, and compatibility with JEDEC-standard DDR3L command protocols and power-down modes.
Technical Context
This device implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# clocks, with DLL-aligned DQS/DQS# strobes for source-synchronous read/write timing. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization during high-bandwidth transfers.
W631GU6MB12I integrates asynchronous RESET#, dynamic ODT (Rtt_WR), multi-purpose register (MPR) for system-level timing calibration, and write leveling for precise DQ-to-DQS skew compensation-critical for stable operation at 800 MHz clock frequency (tCK = 1.25 ns).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8M words × 8 banks × 16 bits), providing 128 MB of addressable storage |
| Data Rate | 1600 MT/s (DDR3L-1600), requiring 800 MHz differential clock input (tCK = 1.25 ns) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical), enabling lower power vs. standard DDR3 |
| CAS Latency | Programmable CL = 5 to 11 (JEDEC-compliant), directly determining tAA read access time (13.75 ns min at CL=11) |
| Operating Temp | –40°C ≤ TCASE ≤ +95°C, qualified for industrial environments without derating |
| Package | VFBGA-96 (7.5 × 13 mm, 1.0 mm height), RoHS-compliant, lead-free |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C), supporting auto-refresh and ASR/PASR modes |
Pinout & Package
VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch; RoHS-compliant, lead-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs for bank and page access; A10 controls auto-precharge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK, CK# | Differential Clock | Edge-triggered command latch point; all commands sampled at CK rising / CK# falling crossing |
| CS#, RAS#, CAS#, WE# | Command Signals | Active-low signals defining command type (ACT, READ, WRITE, PRE, REF, etc.) per JEDEC DDR3L |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ[15:0]; suppresses write data without affecting DQS timing |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; double-data-rate transfers referenced to DQS/DQS# edges |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair: center-aligned with write data, edge-aligned with read data |
| RESET# | Asynchronous Reset | Hardware-initiated initialization sequence; required before first access after power-up |
| ODT | On-Die Termination Control | Dynamic enable/disable of internal termination resistors (RTT_NOM, RTT_WR) for signal integrity |
| VDD, VDDQ | Power Supplies | Separate 1.35 V supplies for core (VDD) and I/O (VDDQ); supports 1.5 V backward compatibility |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | Enables factory-trimmed output driver and ODT impedance matching using external 240 Ω ±1 % resistor to ground |
| Dynamic ODT (Rtt_WR) | Switches termination resistance on DQ/DQS lines during write bursts only, reducing standby power and improving write eye margin |
| Write Leveling | Allows controller to calibrate DQ-to-DQS skew per byte lane via MPR-read feedback, essential for reliable 800 MHz writes |
| Multi-Purpose Register (MPR) | Provides predefined bit pattern (0x00000000) for system-level timing validation and loopback testing without memory access |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50 % by refreshing only active banks, extending battery life in low-power states |
Applications
| Industrial HMI Systems | Network Edge Routers |
|---|---|
|
Use Scenario: Touch-enabled operator panels with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Main system memory buffering display frame buffers, firmware code, and configuration data with deterministic latency. Use Value: W631GU6MB12I's 11-11-11 timing and industrial temp rating ensure stable operation under variable ambient conditions and frequent thermal cycling. |
Use Scenario: Compact Layer 3 switches handling 1 GbE packet buffering and forwarding tables. IC Role / Device Role / Timing Role: High-throughput packet buffer memory interfaced to ARM-based network processors via DDR3L controllers. Use Value: W631GU6MB12I's 1600 MT/s bandwidth and dynamic ODT maintain signal integrity across dense PCB layouts with multiple DDR3L devices. |
| Embedded Vision Controllers | Medical Diagnostic Terminals |
|
Use Scenario: Real-time image acquisition and preprocessing units capturing 1080p video at 30 fps. IC Role / Device Role / Timing Role: Frame buffer memory supporting burst-intensive read-modify-write operations for histogram equalization and edge detection. Use Value: W631GU6MB12I's 8-bank concurrency and programmable CAS latency enable overlapping memory accesses to sustain >1.2 GB/s effective bandwidth. |
Use Scenario: Portable ultrasound or ECG terminals requiring certified component longevity and fail-safe memory behavior. IC Role / Device Role / Timing Role: Non-volatile-configurable working memory with guaranteed refresh compliance over full industrial temperature range. Use Value: W631GU6MB12I's ASR mode and extended tREFI support (3.9 µs at 95°C) meet IEC 62304 Class C reliability requirements for medical hardware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125K | 1 G-bit DDR3L, 96-ball FBGA, same 1600 MT/s speed bin but rated –40°C to +95°C with 1.25 ns tCK; requires different ZQ resistor value (240 Ω vs. 240 Ω ±1 %) | Optimized for Micron-compatible controllers; lacks PASR support and has fixed CL=11 only | Select when using Micron-validated PHY IP or where PASR is not required |
| IS43TR16128B-125KBL | 1 G-bit DDR3L, 96-ball FBGA, identical 1600 MT/s and industrial temp rating; supports CL=5–11 but uses different MRS encoding for CWL | Requires modified initialization sequence for write leveling; no MPR pattern support | Choose for ISSI-qualified platforms needing identical timing margins but accepting alternate calibration flow |
Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, W631GU6MB12I offers broader CAS latency flexibility, integrated PASR for ultra-low-power self-refresh, and standardized MPR-based timing validation-making it preferable for heterogeneous SoC designs requiring robust interoperability and thermal resilience.
Availability
W631GU6MB12I is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, embedded vision systems, medical diagnostic terminals, and other applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GU6MB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and mobile LPDRAM products.
W631GU6MB12I belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally demanding industrial and networking applications requiring JEDEC-compliant low-voltage memory with extended temperature support.
FAQ
What is the maximum clock frequency supported by W631GU6MB12I?
W631GU6MB12I supports a maximum clock frequency of 800 MHz (tCK = 1.25 ns), corresponding to DDR3L-1600 operation with 11-11-11 timing. This is validated across the full industrial temperature range (–40°C to +95°C) and requires stable 1.35 V ±6.3 % supply rails per JEDEC specification.
Does W631GU6MB12I support backward compatibility with standard DDR3 (1.5 V) systems?
Yes, W631GU6MB12I supports dual-voltage operation: it functions at 1.35 V nominal for DDR3L mode and is fully backward compatible with 1.5 V ±0.075 V DDR3 systems. Voltage switching between modes is controlled via VDD/VDDQ supply sequencing and does not require changes to command protocol or timing parameters.
How does the Write Leveling feature work in W631GU6MB12I?
W631GU6MB12I implements JEDEC-compliant write leveling using its MPR and dedicated DQS gating logic. During initialization, the memory controller issues a write leveling command, and W631GU6MB12I returns a known pattern on DQ while adjusting DQS delay until edge alignment is achieved-enabling precise per-lane skew compensation at 800 MHz.
What package type and dimensions does W631GU6MB12I use?
W631GU6MB12I uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. The package is RoHS-compliant, lead-free, and designed for standard reflow soldering profiles used in industrial PCB assembly.
Can W631GU6MB12I operate in Partial Array Self-Refresh (PASR) mode?
Yes, W631GU6MB12I supports PASR via MR2 programming (A1–A3 bits), allowing refresh cycles to target only selected banks. This reduces self-refresh current by up to 50 % compared to full-array refresh, making W631GU6MB12I suitable for battery-backed or energy-constrained industrial applications requiring extended low-power operation.
W631GU6MB12I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6MB12I FAQ
1.How can I place an order for W631GU6MB12I through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6MB12I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6MB12I reliable?
The price and inventory of W631GU6MB12I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6MB12I is usually 5 days.
3.What payment methods are accepted for W631GU6MB12I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6MB12I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6MB12I?
W631GU6MB12I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6MB12I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6MB12I?
For technical support, including W631GU6MB12I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6MB12I requirements.
6.How does Aetrix verify that W631GU6MB12I is sourced from the original manufacturer or authorized distributors?
All W631GU6MB12I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6MB12I meets industry standards.
7.What is the process for return or replacement of W631GU6MB12I?
All W631GU6MB12I units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6MB12I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6MB12I part is unused and in its original packaging.
Return procedure for W631GU6MB12I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6MB12I Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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