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Winbond Electronics Corporation W631GU6MB12I TR

Part No.:
W631GU6MB12I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-VFBGA
Datasheet:
AetrixW631GU6MB12I TR.pdf
Description:
IC DRAM 1GBIT PARALLEL 96VFBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,479

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Product details

Overview

W631GU6MB12I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) timing, supporting industrial temperature range (−40°C to +95°C), and packaged in 96-ball VFBGA (7.5 × 13 mm). It delivers 1600 MT/s data rates for memory subsystems in embedded controllers, networking edge devices, and industrial HMIs.

For engineers reviewing the W631GU6MB12I TR datasheet, W631GU6MB12I TR pinout, W631GU6MB12I TR application, or W631GU6MB12I TR equivalent, key selection considerations include its DDR3L-1600 speed bin with CL=11, tRCD/tRP = 13.75 ns, industrial-grade thermal rating, VFBGA-96 package compatibility, and support for ZQ calibration, dynamic ODT, and write leveling-critical for signal integrity in high-density PCB layouts.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-synchronized DQ/DQS alignment, and differential CK/CK# clocking. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), and additive latency (AL = 0, CL−1, CL−2) to optimize command bus efficiency.

Functional features include asynchronous RESET#, on-die termination (ODT) with synchronous/dynamic modes, Multi-Purpose Register (MPR) for system-level timing calibration, and power management modes such as Precharged Power Down and Auto Self-Refresh (ASR) with extended temperature support up to +95°C.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1 G-bit (8M words × 8 banks × 16 bits), enabling 128 MB of 16-bit-wide memory space
Data Rate1600 MT/s (DDR3L-1600), requiring 800 MHz differential clock input
CAS LatencyCL = 11 at DDR3L-1600, defining 11-clock-cycle delay from READ command to first data output
tRCD / tRP13.75 ns minimum, setting minimum row-to-column and precharge delays for reliable bank activation
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical), reducing power vs. standard DDR3 while maintaining backward compatibility to 1.5 V
Operating Temp−40°C ≤ TCASE ≤ +95°C, qualifying for industrial control, transportation, and ruggedized computing
PackageVFBGA-96 (7.5 × 13 mm, 1.0 mm height), RoHS-compliant, lead-free, suitable for fine-pitch routing

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball map conforms to JEDEC MO-270DA standard for DDR3L SDRAM.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address InputsRow/column address inputs for 8M-word addressing; A12–A14 used for bank select and mode register access
BA0–BA2Bank AddressSelect one of eight internal banks; required for all activate/precharge commands
CK / CK#Differential ClockEdge-triggered reference for all command latching; inputs sampled at crosspoint (CK↑, CK#↓)
CS#Chip SelectActive-low enable for command decoding; deassertion halts command acceptance without interrupting ongoing operations
RAS#, CAS#, WE#Command ControlStandard DDR3 command pins defining ACT, READ, WRITE, PRE, REF, MRS via truth table
DM0–DM1Data MaskPer-byte write mask for 16-bit DQ bus; active-high masks corresponding 8-bit nibble during WRITE
DQ0–DQ15Data I/OBidirectional 16-bit data bus; source-synchronous with DQS/DQS#; supports BL8 and BC4 burst modes
DQS / DQS#Differential StrobeSource-synchronous strobe pair; center-aligned with WRITE data, edge-aligned with READ data
RESET#Asynchronous ResetHardware-initiated initialization sequence; required for power-up and recovery from deep power-down states
ODTOn-Die Termination EnableDynamic control of termination impedance on DQ/DQS/DM lines during WRITE cycles to suppress reflections
ZQZQ Calibration ReferenceConnects to external 240 Ω ±1% resistor to ground for periodic calibration of output drivers and ODT impedances

Key Features

FeatureDesign Value
Dynamic ODT (Rtt_WR)Enables on-the-fly switching of termination resistance during WRITE bursts, improving signal integrity without layout-level resistors
ZQ CalibrationUses external 240 Ω resistor to calibrate output driver strength and ODT values across voltage/temperature, ensuring consistent impedance matching
Write Leveling SupportAllows controller to adjust DQS launch delay relative to CK to compensate for board skew, essential for timing closure at 800 MHz
Multi-Purpose Register (MPR)Provides predefined read pattern for system-level timing margin verification, eliminating need for full memory initialization before calibration
Industrial Temperature RangeGuaranteed operation from −40°C to +95°C with full AC/DC specifications, including doubled refresh rate above 85°C

Applications

Industrial HMI SystemsNetwork Edge Routers

Use Scenario: Touch-enabled operator interfaces in factory automation panels requiring persistent memory for UI assets and runtime variables.

IC Role / Device Role / Timing Role: Primary 16-bit wide DDR3L memory buffer interfacing directly with ARM Cortex-A series SoCs.

Use Value: 1.35 V operation reduces system power by ~15% vs. 1.5 V DDR3; industrial temp rating ensures reliability in uncooled enclosures.

Use Scenario: Packet buffering and forwarding tables in compact Layer 3 switches deployed in telecom cabinets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory for network processor co-processing and packet queue management.

Use Value: DDR3L-1600 speed bin enables 1.6 GB/s sustained bandwidth; dynamic ODT maintains signal integrity across multi-drop DQ buses.

Medical Diagnostic TerminalsRuggedized Transportation Controllers

Use Scenario: Portable ultrasound or imaging display units needing deterministic memory access for real-time image rendering.

IC Role / Device Role / Timing Role: Frame buffer memory synchronized to video engine clocks via precise DQS-to-CK alignment.

Use Value: Write leveling and MPR support simplify timing validation during medical device certification; −40°C to +95°C rating covers vehicle-mounted use cases.

Use Scenario: Onboard train signaling or fleet telematics units exposed to vibration, wide ambient swings, and EMI.

IC Role / Device Role / Timing Role: Main system memory for Linux-based control firmware with frequent power cycling and thermal stress.

Use Value: Asynchronous RESET# ensures robust recovery after brownouts; ASR mode extends self-refresh hold time under intermittent power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K128M16JT-125:JSame density (1G-bit), 96-ball VFBGA, DDR3L-1600, but rated −40°C to +90°C (not +95°C); requires different ZQ resistor tolerance (±0.5% vs. ±1%)Valid for industrial systems below +90°C; not qualified for +95°C cabinet environmentsSelect if existing design uses Micron's timing model or requires tighter ZQ calibration spec
IS43TR16128B-125KBL1G-bit DDR3L-1600 in 96-ball VFBGA, but supports only CL=9/11 (no CL=10); tRCD/tRP = 13.75 ns same, but IDD0 max = 110 mA (vs. 105 mA)Suitable where lower standby current is secondary to cost; lacks PASR support for partial-array refresh optimizationPrefer when BOM cost sensitivity outweighs advanced power management features like PASR

Compared with W631GU6MB12I TR, MT41K128M16JT-125:J offers tighter ZQ tolerance but narrower temperature ceiling, while IS43TR16128B-125KBL trades PASR and CL flexibility for marginal cost reduction-making W631GU6MB12I TR optimal for thermally demanding, feature-rich industrial designs.

Availability

W631GU6MB12I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical diagnostic terminals, and ruggedized transportation controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6MB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU6MB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant signal integrity features like write leveling and dynamic ODT.

FAQ

What is the maximum operating frequency supported by W631GU6MB12I TR?

W631GU6MB12I TR supports DDR3L-1600 operation at 800 MHz clock frequency (1600 MT/s data rate), with tCK(AVG) of 1.25–1.875 ns depending on CAS Latency setting. Its speed grade "12I" confirms compliance with JEDEC DDR3L-1600 (11-11-11) timing, and it is not rated for DDR3L-1866 or higher bins.

Does W631GU6MB12I TR support backward compatibility with standard 1.5 V DDR3 systems?

Yes, W631GU6MB12I TR supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L mode) and is fully backward compatible with 1.5 V ±0.075 V DDR3 systems. The device automatically adapts to VDD/VDDQ levels within either range without external configuration, per JEDEC JESD209-2 specification.

How does the ZQ calibration function work on W631GU6MB12I TR?

W631GU6MB12I TR performs ZQ calibration by referencing an external 240 Ω ±1% resistor connected between the ZQ pin and ground. This process adjusts internal output driver strength and on-die termination (ODT) impedances to maintain 34 Ω nominal resistance across voltage and temperature variations, ensuring signal integrity on high-speed DQ/DQS buses.

What power-saving features are implemented in W631GU6MB12I TR?

W631GU6MB12I TR includes Precharged Power Down, Active Power Down, Auto Self-Refresh (ASR), Partial Array Self Refresh (PASR), and dynamic ODT. At +95°C, it doubles refresh rate (tREFI = 3.9 µS) and supports MR2-controlled ASR activation-reducing IDD6 to 10 mA in self-refresh while maintaining data retention across the full industrial temperature range.

Is W631GU6MB12I TR pin-compatible with other Winbond DDR3L SDRAMs in the same package?

W631GU6MB12I TR uses the standard JEDEC-compliant 96-ball VFBGA footprint for DDR3L SDRAMs, and shares identical pinout with other members of the W631GU6MB family (e.g., W631GU6MB11I, W631GU6MB15I). However, speed bin and temperature grade differences do not affect pin assignment-ensuring layout reuse across variants.

W631GU6MB12I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
1Gbit
Memory Organization:
64M x 16
Memory Interface:
Parallel
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-VFBGA (7.5x13)

W631GU6MB12I TR FAQ

1.How can I place an order for W631GU6MB12I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GU6MB12I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GU6MB12I TR reliable?

The price and inventory of W631GU6MB12I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6MB12I TR is usually 5 days.

3.What payment methods are accepted for W631GU6MB12I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6MB12I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GU6MB12I TR?

W631GU6MB12I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GU6MB12I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GU6MB12I TR?

For technical support, including W631GU6MB12I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6MB12I TR requirements.

6.How does Aetrix verify that W631GU6MB12I TR is sourced from the original manufacturer or authorized distributors?

All W631GU6MB12I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6MB12I TR meets industry standards.

7.What is the process for return or replacement of W631GU6MB12I TR?

All W631GU6MB12I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6MB12I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GU6MB12I TR part is unused and in its original packaging.

Return procedure for W631GU6MB12I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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