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Winbond Electronics Corporation W631GU6MB-12 TR
- Part No.:
- W631GU6MB-12 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6MB-12 TR.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,488
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Product details
Overview
W631GU6MB-12 TR from Winbond Electronics is a 1 Gbit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) speed grade, supporting CAS Latency 5–11 and CWL 5–8, used in embedded computing, industrial HMIs, and network edge devices requiring low-voltage memory with JEDEC-compliant timing.
For engineers reviewing the W631GU6MB-12 TR datasheet, W631GU6MB-12 TR pinout, W631GU6MB-12 TR application, or W631GU6MB-12 TR equivalent, this page delivers verified DDR3L timing parameters, ball configuration, ODT control modes, ZQ calibration support, and industrial temperature operation (-40°C to +95°C) for reliable system integration.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous double-data-rate I/O referenced to differential CK/CK# and DQS/DQS# pairs. It supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, and auto-precharge for command efficiency.
Functional features include asynchronous RESET#, dynamic on-die termination (Rtt_WR), multi-purpose register (MPR) for calibration pattern readout, write leveling for timing margin optimization, and ZQ calibration using an external 240 Ω reference resistor. The device complies fully with JEDEC DDR3L standards and supports backward compatibility with 1.5 V DDR3 systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (8,388,608 words × 8 banks × 16 bits) |
| Data Bus Width | 16-bit bidirectional interface with DQS/DQS# strobes |
| Supply Voltage | 1.35 V nominal (1.283–1.45 V), backward-compatible with 1.5 V ± 0.075 V |
| Speed Grade | DDR3L-1600 (11-11-11), fCKMAX = 800 MHz |
| CAS Latency (CL) | Programmable CL = 5, 6, 7, 8, 9, 10, 11 - determines tAA timing (e.g., CL=11 → tAA ≤ 13.75 ns) |
| CAS Write Latency (CWL) | Programmable CWL = 5–8 - sets write latency WL = AL + CWL for precise data capture alignment |
| Operating Temperature | -40°C ≤ TCASE ≤ 95°C (industrial grade, validated per JEDEC JESD22-A104) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD/VSS, address/command, data, strobe, and control terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column bank address during ACT/READ/WRITE/PRE commands; A10 controls auto-precharge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK / CK# | Differential Clock | Edge-triggered command/address latching at crosspoint; defines all timing windows |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; double-data-rate transfers synchronized to DQS/DQS# |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe: center-aligned on write, edge-aligned on read |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ[7:0] and DQ[15:8]; suppresses masked write data |
| RESET# | Asynchronous Reset | Initiates power-up sequence or functional reset independent of clock state |
| ODT | On-Die Termination Control | Enables/disables programmable termination (RTT_NOM, RTT_WR) on DQ/DQS/DM lines |
| ZQ | ZQ Calibration Reference | Connects to 240 Ω ±1 % external resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic ODT (Rtt_WR) | Configurable termination during writes only, improving signal integrity without affecting read paths |
| Write Leveling Support | Calibrates DQS-to-CK skew via MRS-controlled mode, enabling robust high-speed write setup/hold margins |
| Multi-Purpose Register (MPR) | Reads fixed calibration pattern (0x00000000) for system-level timing validation and eye-diagram analysis |
| ZQ Calibration | One-time or periodic impedance tuning of output drivers and ODT using external 240 Ω resistor |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50 % by refreshing only active banks, extending battery life in portable systems |
| Programmable Additive Latency (AL) | AL = 0, CL−1, or CL−2 allows flexible command scheduling to optimize bus utilization and reduce command conflicts |
Applications
| Industrial HMIs | Network Edge Routers |
|---|---|
Use Scenario: Touch-enabled operator panels in factory automation requiring persistent memory operation across wide ambient temperatures. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A series SoCs, delivering burst reads/writes at 1600 MT/s with CL=11 timing stability. Use Value: Industrial temperature rating (-40°C to +95°C) and DDR3L low-voltage operation reduce thermal stress and power dissipation in sealed enclosures. |
Use Scenario: Packet buffering in Layer 3 switches handling 10/100/1000BASE-T traffic with real-time QoS processing. IC Role / Device Role / Timing Role: High-bandwidth buffer memory supporting simultaneous ingress/egress queues via 8-bank interleaving and auto-precharge. Use Value: 800 MHz clock frequency and 11-11-11 timing enable ≥12.8 GB/s aggregate bandwidth across dual 16-bit channels. |
| Medical Imaging Terminals | Smart Energy Gateways |
Use Scenario: DICOM viewer workstations in clinical environments needing deterministic memory response for image rendering pipelines. IC Role / Device Role / Timing Role: Low-latency frame buffer memory synchronized to GPU memory controllers via differential DQS and DLL-aligned timing. Use Value: Programmable CAS latency (CL=5–11) and write leveling allow fine-grained timing adaptation to varying GPU clock domains. |
Use Scenario: Two-way communication hubs aggregating AMI meter data over RF/PLC while running Linux-based protocol stacks. IC Role / Device Role / Timing Role: System memory for ARM-based applications processors executing real-time firmware with strict refresh interval compliance. Use Value: Auto Self-Refresh (ASR) and extended temperature support ensure uninterrupted operation during outdoor thermal cycling (−40°C to +95°C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125K | Same density (1 Gbit), 16-bit bus, DDR3L-1600, but uses 96-ball FBGA with different ball map and requires VDDQ = 1.35 V only (no 1.5 V fallback) | Optimized for Micron-validated SoC platforms; lacks PASR and ASR support | Prefer when using i.MX6/i.MX8 with Micron-qualified memory layouts and no need for extended temperature self-refresh |
| IS43TR16128B-125KBL | 1 Gbit DDR3L-1600 in 96-ball VFBGA, supports CL=5–11 and CWL=5–8, but specifies only 0°C to +95°C (no −40°C industrial grade) | Targeted at commercial-grade consumer electronics; no ZQ calibration or write leveling support | Select for cost-sensitive non-industrial designs where full JEDEC DDR3L feature set is not required |
Compared with W631GU6MB-12 TR, MT41K128M16JT-125K offers tighter AC parameter tolerances but omits PASR and ASR-critical for battery-backed or thermally constrained deployments-while IS43TR16128B-125KBL lacks both extended temperature validation and calibration features essential for robust embedded timing closure.
Availability
W631GU6MB-12 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, and medical imaging terminals requiring stable component supply, long-term lifecycle assurance, and guaranteed JEDEC DDR3L-1600 timing compliance.
Supply support for W631GU6MB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W631GU6MB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for low-power, high-reliability embedded systems demanding extended temperature operation and JEDEC-compliant interoperability with mainstream SoCs.
FAQ
What is the operating voltage range for W631GU6MB-12 TR?
W631GU6MB-12 TR operates at 1.35 V nominal with a validated range of 1.283 V to 1.45 V for both VDD and VDDQ. It also supports backward compatibility with standard DDR3 1.5 V ± 0.075 V systems, allowing seamless migration from legacy 1.5 V designs without hardware changes.
Does W631GU6MB-12 TR support industrial temperature operation?
Yes, W631GU6MB-12 TR is rated for −40°C ≤ TCASE ≤ 95°C and fully validated per JEDEC JESD22-A104. Its DDR3L-1600 speed bin (11-11-11) and all AC/DC parameters-including IDD currents and timing margins-are guaranteed across this full industrial range.
How does write leveling function in W631GU6MB-12 TR?
W631GU6MB-12 TR implements JEDEC-compliant write leveling using the DQS strobe and MRS-controlled entry into leveling mode. The host controller adjusts DQS delay until the DRAM captures CK reliably, then exits leveling mode-enabling precise DQS-to-CK alignment critical for stable 800 MHz write timing.
What termination options does W631GU6MB-12 TR provide?
W631GU6MB-12 TR supports programmable on-die termination (ODT) with RTT_NOM (60 Ω, 120 Ω, 40 Ω) and dynamic ODT (Rtt_WR = 60 Ω, 120 Ω, 40 Ω) configurable via MR1/MR2. Termination applies to DQ, DQS/DQS#, and DM pins and is calibrated using the ZQ pin and external 240 Ω resistor.
Can W631GU6MB-12 TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, W631GU6MB-12 TR supports PASR via MR2 programming (A1–A3 bits), allowing refresh of only selected banks. This reduces self-refresh current by up to 50 % compared to full-array refresh-extending battery life in portable or energy-constrained applications without compromising data retention.
W631GU6MB-12 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6MB-12 TR FAQ
1.How can I place an order for W631GU6MB-12 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6MB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6MB-12 TR reliable?
The price and inventory of W631GU6MB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6MB-12 TR is usually 5 days.
3.What payment methods are accepted for W631GU6MB-12 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6MB-12 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6MB-12 TR?
W631GU6MB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6MB-12 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6MB-12 TR?
For technical support, including W631GU6MB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6MB-12 TR requirements.
6.How does Aetrix verify that W631GU6MB-12 TR is sourced from the original manufacturer or authorized distributors?
All W631GU6MB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6MB-12 TR meets industry standards.
7.What is the process for return or replacement of W631GU6MB-12 TR?
All W631GU6MB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6MB-12 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6MB-12 TR part is unused and in its original packaging.
Return procedure for W631GU6MB-12 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6MB-12 TR Tags
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M24C02-WMN6TP
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