Winbond Electronics Corporation W631GU6MB15I

Overview

W631GU6MB15I from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35 V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-1333 speed grade (9-9-9 timing), and delivering 1333 MT/s data transfer rate for embedded computing and industrial control memory subsystems.

For engineers reviewing the W631GU6MB15I datasheet, W631GU6MB15I pinout, W631GU6MB15I application, or W631GU6MB15I equivalent, this page provides verified timing parameters, ball configuration, ODT and ZQ calibration behavior, CAS Write Latency (CWL=7), and industrial-grade thermal validation - all critical for DDR3L interface timing closure and power-aware memory controller design.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access across bank groups. It supports programmable CAS Latency (CL=5–10) and CAS Write Latency (CWL=5–7), with tCK(AVG) of 1.5 ns minimum for CL=9/CWL=7 operation.

The device uses differential clock (CK/CK#) and strobe (DQS/DQS#) inputs, DLL-aligned I/O timing, asynchronous RESET#, and on-die termination (ODT) with dynamic ODT (Rtt_WR) and ZQ calibration via external 240 Ω reference resistor - all compliant with JEDEC JESD79-3F specification for DDR3L.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, and ZQ pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with W631GU6MB15I, IS43TR16128B-15KLI omits PASR and has reduced thermal margin, while MT41K128M16TW-15E:J adds thermal sensing but increases active current - making W631GU6MB15I optimal for cost-sensitive, thermally constrained industrial memory subsystems needing proven PASR and ZQ calibration.

Availability

W631GU6MB15I is available at Aetrix Electronics and suitable for industrial automation, medical imaging, transportation telematics, and ruggedized edge AI applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6MB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU6MB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant reliability in harsh environments.

FAQ

What is the maximum operating frequency supported by W631GU6MB15I?

W631GU6MB15I supports DDR3L-1333 operation at 667 MHz clock frequency (1333 MT/s data rate). Its tCK(AVG) specification is 1.5 ns minimum for CL=9/CWL=7 configurations, and it is validated for stable operation across –40°C to +95°C with appropriate refresh management. The device does not support higher-speed bins such as DDR3L-1600 or DDR3L-1866.

Does W631GU6MB15I support backward compatibility with standard 1.5 V DDR3 systems?

Yes, W631GU6MB15I is fully backward compatible with 1.5 V DDR3 systems. It accepts VDD/VDDQ = 1.5 V ± 0.075 V and maintains functional and timing compliance with JEDEC JESD79-3F DDR3 specifications when operated at 1.5 V, enabling drop-in replacement in legacy designs without hardware modification.

How is ZQ calibration implemented on W631GU6MB15I?

W631GU6MB15I performs ZQ calibration using an external 240 Ω ±1 % resistor connected between the ZQ pin and ground. The internal calibration circuit adjusts output driver strength and ODT impedance values to match this reference, ensuring ±5 % accuracy. Calibration is triggered by ZQCL command and recommended after power-up and periodically during operation.

What CAS Latency and CAS Write Latency settings are valid for W631GU6MB15I at DDR3L-1333 speed?

For DDR3L-1333 operation, W631GU6MB15I supports CAS Latency (CL) = 5, 6, 7, 8, 9, or 10 and CAS Write Latency (CWL) = 5, 6, or 7. The JEDEC-compliant configuration is CL = 9 and CWL = 7, yielding tRCD/tRP/tAA = 9 cycles (13.5 ns) and write latency WL = AL + CWL, where AL is programmable as 0, CL–1, or CL–2.

Is W631GU6MB15I suitable for use in systems requiring Partial Array Self-Refresh (PASR)?

Yes, W631GU6MB15I supports Partial Array Self-Refresh (PASR) as defined in MR2 register bits A0–A2. This feature allows selective self-refresh of only active memory banks, reducing IDD6 current during idle periods - a key advantage for battery-backed or thermally constrained industrial systems where full-array refresh would be unnecessary and power-inefficient.