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Winbond Electronics Corporation W631GU6MB15I TR
- Part No.:
- W631GU6MB15I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6MB15I TR.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,137
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Product details
Overview
W631GU6MB15I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, operating at 1.35V nominal supply with DDR3L-1333 (9-9-9) timing, -40°C to +95°C industrial temperature range, and VFBGA-96 (7.5 × 13 mm) package. It serves as main memory in embedded controllers, network edge devices, and industrial HMIs requiring low-voltage, JEDEC-compliant synchronous DRAM with programmable CAS latency and on-die termination.
For engineers reviewing the W631GU6MB15I TR datasheet, W631GU6MB15I TR pinout, W631GU6MB15I TR application, or W631GU6MB15I TR equivalent, this page delivers verified DDR3L timing parameters, ball configuration, ODT control modes, ZQ calibration support, and industrial-grade thermal validation - all confirmed for the exact -15I speed grade and TR tape-and-reel packaging.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous data transfer using differential CK/CK# and DQS/DQS# pairs. It supports programmable CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and burst lengths of 8 (BL8) or 4 (BC4).
Functional operation includes asynchronous RESET#, auto-precharge, multiple power-down modes (precharged/active), self-refresh with ASR/PASR support, write leveling for system-level timing calibration, and multi-purpose register (MPR) readout for predefined calibration bit patterns. ZQ calibration adjusts output driver and ODT impedances using an external 240 Ω resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8M words × 8 banks × 16 bits), delivering 128 MB total capacity |
| Data Rate / Speed Grade | DDR3L-1333 (667 MHz clock, 1333 MT/s), CL=9, tRCD/tRP/tRC = 9-9-9 nCK |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible with 1.5 V ± 0.075 V DDR3 |
| Operating Temperature | -40°C ≤ TCASE ≤ 95°C (industrial grade, validated per JEDEC JESD209-2A) |
| Package | VFBGA-96, 7.5 mm × 13 mm × 1.0 mm, RoHS-compliant, lead-free |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; 3.9 µs at 85–95°C (doubled refresh rate required) |
| Power Consumption | IDD0 ≤ 95 mA (active bank), IDD6 ≤ 10 mA (self-refresh), IDD4W ≤ 170 mA (burst write) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and standard DDR3L ball assignment including VDD/VDDQ, VSS, CK/CK#, DQS/DQS#, DQ[15:0], DM[1:0], A[14:0], BA[2:0], CKE, CS#, RAS#, CAS#, WE#, RESET#, ZQ, and ODT.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Core & I/O supply | Separate 1.35 V supplies enable independent noise management and voltage scaling |
| CK, CK# | Differential clock input | Latches all commands on rising edge of CK; defines timing reference for all operations |
| DQS, DQS# | Differential data strobe | Source-synchronous edge-aligned on reads, center-aligned on writes; enables precise timing capture |
| A[14:0], BA[2:0] | Address & bank select | 15-bit row/column address + 3-bit bank address supporting 8M × 8 banks × 16-bit organization |
| DM[1:0] | Data mask | Per-byte write masking for DQ[15:0]; enables partial-word writes without read-modify-write |
| RESET# | Asynchronous reset | Initiates power-up sequence and resets internal state machines independently of clock |
| ZQ | Calibration reference | Connects to 240 Ω ±1 % external resistor to ground for factory-trimmed output driver and ODT impedance |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 5–7 selectable per frequency; enables optimal write timing alignment across speed bins |
| Dynamic On-Die Termination (Rtt_WR) | ODT impedance (Rtt_NOM/Rtt_WR) configurable via MR1/MR2; improves signal integrity during write bursts |
| Write Leveling Support | Hardware-assisted timing calibration using DQS gating; compensates for board skew between controller and W631GU6MB15I TR |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS; used for system-level timing margin verification and eye-diagram tuning |
| Auto Self-Refresh (ASR) & PASR | MR2-controlled ASR extends refresh autonomy; PASR reduces current by refreshing only active subarrays |
Applications
| Industrial HMI Memory | Network Edge Router Buffer |
|---|---|
|
Use Scenario: Touch-enabled human-machine interface in factory automation panels requiring reliable memory operation across wide ambient temperatures. IC Role / Device Role / Timing Role: Primary working memory interfacing directly with ARM Cortex-A series SoCs via 16-bit DDR3L bus. Use Value: -40°C to +95°C rating ensures uninterrupted operation during thermal cycling; DDR3L-1333 bandwidth meets GUI frame-buffer throughput needs without 1.5 V power overhead. |
Use Scenario: Packet buffering in compact 5G small-cell gateways where space-constrained PCBs demand high-density, low-power DRAM. IC Role / Device Role / Timing Role: Shared packet buffer for traffic shaping and QoS processing in dual-core MIPS-based networking SoCs. Use Value: VFBGA-96 footprint minimizes board area; 1.35 V operation reduces thermal load in sealed enclosures; ZQ calibration maintains signal integrity at 667 MHz. |
| Medical Imaging Subsystem | Automated Test Equipment (ATE) |
|
Use Scenario: Real-time image preprocessing in portable ultrasound units needing deterministic memory latency and low standby power. IC Role / Device Role / Timing Role: Frame store and FIFO buffer for FPGA-accelerated image pipeline, synchronized to 667 MHz system clock. Use Value: Programmable CL/CWL allows fine-tuning of read/write timing margins; self-refresh current ≤10 mA extends battery life during idle periods. |
Use Scenario: High-speed digital pattern memory in semiconductor test handlers requiring stable, repeatable timing under thermal stress. IC Role / Device Role / Timing Role: Vector storage memory for parallel pin electronics, accessed via dedicated DDR3L PHY in test controller ASIC. Use Value: Industrial temperature qualification (-40°C to +95°C) guarantees consistent tAA/tRCD timing across environmental chambers; ODT and write leveling ensure signal fidelity at 1333 MT/s. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-15KLI | 1 G-bit, DDR3L-1333, same VFBGA-96, but CL=11 default; higher IDD0 (105 mA) and no PASR support | Valid for general-purpose DDR3L use but lacks ASR/PASR for extended low-power operation | Select when full JEDEC compliance at 95°C is sufficient and advanced refresh features are unnecessary |
| MT41K128M16HA-125:E | 2 G-bit density, DDR3L-1600, VFBGA-96, CL=11, requires 1.2 V VDDQ; not drop-in compatible | Higher bandwidth and capacity suit memory-intensive applications but demand layout revision | Choose only if system design accommodates voltage change, timing revalidation, and increased power budget |
Compared with IS43TR16128B-15KLI, W631GU6MB15I TR offers lower active current and advanced refresh modes; versus MT41K128M16HA-125:E, it provides pin-compatible industrial reliability at lower cost and power, though with half the density and reduced speed headroom.
Availability
W631GU6MB15I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging subsystems, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GU6MB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU6MB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, JEDEC compliance, and robust signal integrity features like ZQ calibration and write leveling.
FAQ
What is the maximum operating frequency supported by W631GU6MB15I TR?
W631GU6MB15I TR supports DDR3L-1333 operation, corresponding to a 667 MHz clock frequency and 1333 MT/s data rate. Its AC timing specifications are validated for CL=9, tRCD=tRP=tRC=9 nCK at VDD/VDDQ = 1.283–1.45 V and -40°C to +95°C case temperature. This speed grade is fixed for the -15I suffix and cannot be overclocked beyond JEDEC-defined limits.
Does W631GU6MB15I TR support both DDR3 and DDR3L voltage levels?
Yes, W631GU6MB15I TR is backward-compatible with standard DDR3 1.5 V operation (±0.075 V) while fully compliant with DDR3L 1.35 V specifications. It operates across VDD/VDDQ = 1.283–1.45 V for DDR3L mode and 1.425–1.575 V for DDR3 mode, with identical timing and functionality in both configurations per JEDEC JESD209-2A.
How is on-die termination (ODT) configured on W631GU6MB15I TR?
ODT on W631GU6MB15I TR is controlled via Mode Registers MR1 and MR2. Static ODT values (Rtt_NOM) and dynamic write-termination (Rtt_WR) are selected from 120 Ω, 60 Ω, 40 Ω, or 30 Ω options. Configuration requires MRS commands after power-up initialization; ZQ calibration must be performed first to trim driver and ODT impedances using the external 240 Ω resistor.
What is the purpose of the ZQ pin on W631GU6MB15I TR?
The ZQ pin on W631GU6MB15I TR connects to a precision 240 Ω ±1 % external resistor to ground and enables factory-trimmed calibration of output driver strength and on-die termination (ODT) impedances. ZQ calibration commands (ZQCL and ZQCS) must be issued during initialization and periodically during operation to maintain signal integrity across voltage and temperature variations.
Can W631GU6MB15I TR operate in self-refresh mode at its maximum rated temperature?
Yes, W631GU6MB15I TR supports self-refresh operation up to +95°C case temperature. At temperatures above 85°C, the device requires doubled refresh frequency (tREFI = 3.9 µs instead of 7.8 µs), achieved either by enabling Auto Self-Refresh (ASR) via MR2 or by issuing manual self-refresh commands. IDD6 remains ≤10 mA across the full -40°C to +95°C range.
W631GU6MB15I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6MB15I TR FAQ
1.How can I place an order for W631GU6MB15I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6MB15I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6MB15I TR reliable?
The price and inventory of W631GU6MB15I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6MB15I TR is usually 5 days.
3.What payment methods are accepted for W631GU6MB15I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6MB15I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6MB15I TR?
W631GU6MB15I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6MB15I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6MB15I TR?
For technical support, including W631GU6MB15I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6MB15I TR requirements.
6.How does Aetrix verify that W631GU6MB15I TR is sourced from the original manufacturer or authorized distributors?
All W631GU6MB15I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6MB15I TR meets industry standards.
7.What is the process for return or replacement of W631GU6MB15I TR?
All W631GU6MB15I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6MB15I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6MB15I TR part is unused and in its original packaging.
Return procedure for W631GU6MB15I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6MB15I TR Tags
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