Winbond Electronics Corporation W631GU6MB-15 TR

Overview

W631GU6MB-15 TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, operating at 1.35V nominal supply with DDR3L-1333 (9-9-9) timing, supporting CAS Latency 5–10 and CWL 5–7, and designed for low-power embedded and industrial memory subsystems requiring JEDEC-compliant 1.35V operation.

For engineers reviewing the W631GU6MB-15 TR datasheet, W631GU6MB-15 TR pinout, W631GU6MB-15 TR application, or W631GU6MB-15 TR equivalent, this device delivers verified DDR3L-1333 performance with programmable ODT, ZQ calibration, write leveling, and multi-temperature-grade support - critical for memory interface validation, power-sensitive SoC designs, and long-lifecycle industrial deployments.

Technical Context

This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, synchronous differential clocking (CK/CK#), and bi-directional differential DQS/DQS# strobes aligned to data edges. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and dynamic ODT for write signal integrity.

Key control features include asynchronous RESET#, mode register programming (MR0–MR3) for CAS Latency, CWL, PASR, ASR, and MPR-based system timing calibration. The device complies with JEDEC DDR3L standards and supports backward compatibility to 1.5V DDR3 operation via VDD/VDDQ voltage switching.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint and 0.8 mm ball pitch. Ball configuration includes 16 data I/Os (DQ0–DQ15), 8 address/command lines (A0–A13, BA0–BA2, A14/A15 multiplexed), differential clocks (CK/CK#), differential strobes (DQS/DQS#, DM), control signals (CS#, RAS#, CAS#, WE#, CKE, ODT), and dedicated RESET#.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with W631GU6MB-15 TR, MT41K128M16JT-125:K offers higher bandwidth but demands PCB redesign and controller requalification, whereas IS43TR16128B-15KBL provides direct replacement capability with minimal firmware adjustments for memory initialization.

Availability

W631GU6MB-15 TR is available at Aetrix Electronics and suitable for industrial HMI panels, network edge routers, medical diagnostic terminals, and smart energy gateways requiring stable component supply, long-term lifecycle assurance, and JEDEC DDR3L compliance.

Supply support for W631GU6MB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU6MB series belongs to Winbond's DDR3L SDRAM product line, engineered for cost-effective, low-power, high-reliability memory subsystems in temperature-stressed embedded applications where voltage flexibility and JEDEC compliance are mandatory.

FAQ

What is the maximum supported CAS Latency for W631GU6MB-15 TR at DDR3L-1333 speed?

The W631GU6MB-15 TR supports CAS Latency settings of 5, 6, 7, 8, 9, and 10 per JEDEC DDR3L-1333 specification. At its rated speed bin, CL=9 is the default timing (9-9-9), but CL=10 is also valid and may be selected for improved timing margin in electrically challenging layouts. All supported CL values are confirmed in the device's Mode Register MR0 configuration.

Does W631GU6MB-15 TR support both 1.35V and 1.5V operation?

Yes, W631GU6MB-15 TR is fully backward compatible with standard DDR3 1.5V operation. It accepts VDD/VDDQ = 1.5V ±0.075V and retains full JEDEC functionality, including timing, refresh, and command sets. Voltage switching between DDR3L and DDR3 modes is supported via controlled power sequencing - no hardware modification is needed beyond supply rail configuration.

What package type and ball count does W631GU6MB-15 TR use?

W631GU6MB-15 TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch. This package is RoHS-compliant and lead-free, and matches JEDEC MO-270AB standard. Ball assignments - including DQ0–DQ15, CK/CK#, DQS/DQS#, and RESET# - are fully documented in Section 5 ("Ball Configuration") of the official datasheet.

How does write leveling function in W631GU6MB-15 TR?

Write leveling in W631GU6MB-15 TR is a training sequence initiated by the memory controller to calibrate DQS-to-CK skew per device. During this mode, the DRAM returns a known pattern on DQ, allowing the controller to adjust DQS delay until alignment is achieved. This feature is essential for timing closure in multi-drop DDR3L topologies and is enabled via MR2 bit A4; the procedure is defined in Section 8.9 of the W631GU6MB-15 TR datasheet.

Is W631GU6MB-15 TR suitable for extended temperature applications up to 95°C?

Yes, W631GU6MB-15 TR is qualified for operation from 0°C to 95°C case temperature, as indicated by its "-15" speed grade suffix. It meets full JEDEC AC/DC specifications across this range, including doubled refresh rate (tREFI = 3.9 µs) above 85°C. No derating or special initialization is required - the device automatically adapts using MR2 settings for Auto Self-Refresh (ASR) when configured.