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Winbond Electronics Corporation W631GU6NB-09
- Part No.:
- W631GU6NB-09
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6NB-09.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,486
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Product details
Overview
W631GU6NB-09 from Winbond Electronics is a 1 Gbit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35 V nominal supply with DDR3L-2133 (14-14-14) timing, supporting CAS Latency 14 and CWL 10, and delivering up to 2133 MT/s data rates for high-bandwidth memory subsystems in embedded computing and industrial controllers.
For engineers reviewing the W631GU6NB-09 datasheet, W631GU6NB-09 pinout, W631GU6NB-09 application, or W631GU6NB-09 equivalent, this page provides verified DDR3L timing parameters, ball configuration, ODT and ZQ calibration behavior, power-down modes, and JEDEC-compliant thermal grading for -09 speed grade operation across 0°C to 95°C case temperature.
Technical Context
This device implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with DLL-aligned DQS/DQS# strobes for source-synchronous read/write timing. It supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, and dynamic on-die termination (Rtt_WR) for signal integrity during burst writes.
W631GU6NB-09 enables system-level calibration via write leveling and Multi-Purpose Register (MPR) read patterns, and supports ZQ calibration using an external 240 Ω reference resistor. Its asynchronous RESET# pin ensures deterministic power-up initialization and runtime reset under stable VDD/VDDQ conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (8,388,608 words × 8 banks × 16 bits) |
| Data Rate | 2133 MT/s (DDR3L-2133, fCK = 1066 MHz) |
| Supply Voltage | 1.35 V nominal (VDD/VDDQ = 1.283 V to 1.45 V); backward compatible to 1.5 V ±0.075 V |
| CAS Latency (CL) | Configurable up to CL=14; tAA min = 13.09 ns at DDR3L-2133 |
| CAS Write Latency (CWL) | Configurable up to CWL=10; WL = AL + CWL determines write timing alignment |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (JEDEC industrial-grade specification) |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; doubles to 3.9 µs above 85°C with ASR or Manual Self-Refresh enabled |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant lead-free) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and window-type substrate construction optimized for thermal dissipation and signal integrity in dense PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bits for bank and memory location selection; latched on CK rising edge |
| BA0–BA2 | Bank Address Inputs | Select one of eight internal banks; sampled with command decode on CK rising edge |
| CK, CK# | Differential Clock Inputs | Edge-triggered command interface; all inputs latched at CK rising / CK# falling crosspoint |
| CS#, RAS#, CAS#, WE# | Command Inputs | Active-low control signals defining READ, WRITE, ACTIVATE, PRECHARGE, REFRESH, etc. |
| RESET# | Asynchronous Reset Input | Forces device into known state during power-up or runtime; requires stable VDD/VDDQ before deassertion |
| DQ0–DQ15 | Data I/Os | 16-bit bidirectional data bus; referenced to DQS/DQS# for double-data-rate transfers |
| DQS, DQS# | Differential Data Strobe | Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data |
| DM0–DM1 | Data Mask Inputs | Per-byte masking for WRITE operations; active-high, sampled with write data on DQS edges |
| ODT | On-Die Termination Control | Enables/disables programmable termination resistors on DQ/DQS/DM lines per MR1/MR2 settings |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1% resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5–10; enables precise write timing alignment across frequency bins without layout changes |
| Dynamic On-Die Termination (Rtt_WR) | Switches ODT impedance during WRITE bursts only, reducing standby power while maintaining signal integrity |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor ensures ±10% output driver and ODT impedance accuracy over voltage/temperature |
| Write Leveling Support | Hardware-assisted timing calibration mode adjusts DQS-to-CK skew at system level, critical for reliable DDR3L-2133 operation |
| Multi-Purpose Register (MPR) | Predefined bit pattern (0x00000000) readable via READ command for system-level timing margin verification |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, enabling lower-power idle states in multi-bank workloads |
Applications
| Industrial PLC Controllers | Network Edge Routers |
|---|---|
|
Use Scenario: Real-time deterministic execution of ladder logic and motion control algorithms requiring low-latency memory access and sustained bandwidth. IC Role / Device Role / Timing Role: Primary working memory interfaced directly to ARM Cortex-A9/A15 or MIPS-based SoCs with DDR3L controllers. Use Value: DDR3L-2133 speed bin and CL=14 timing ensure sub-14 ns tAA access latency, enabling <100 µs cycle times for hard real-time tasks. |
Use Scenario: Packet buffering and forwarding tables in Layer 3 switching ASICs handling 10 GbE line rates. IC Role / Device Role / Timing Role: High-throughput packet buffer with interleaved bank access and burst-chop support for variable-length frame storage. Use Value: 8-bank concurrency and 2K-byte page size allow >95% bus utilization under mixed read/write traffic, minimizing head-of-line blocking. |
| Medical Imaging Systems | Automated Test Equipment (ATE) |
|
Use Scenario: Frame buffering for ultrasound beamforming and MRI reconstruction pipelines requiring error-resilient, thermally stable memory. IC Role / Device Role / Timing Role: Dual-rank DDR3L memory subsystem supporting ECC-capable controllers with extended temperature operation. Use Value: 0°C to 95°C case rating and ASR/PASR features maintain data retention and refresh compliance during prolonged imaging sessions. |
Use Scenario: Pattern memory for high-speed digital I/O channels in semiconductor test handlers performing parallel device validation. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory feeding high-speed SERDES interfaces synchronized to system clock domains. Use Value: DLL-off mode and write leveling reduce setup/hold violations at 2133 MT/s, ensuring <1 ppm pattern error rate over 10⁹ cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125:K (Micron) | Same density, VFBGA-96, DDR3L-1600 (11-11-11); CL=11, CWL=7; no PASR or MPR support | Limited to 1600 MT/s; lacks write leveling and MPR calibration features required for DDR3L-2133 designs | Select when system clock is capped at 800 MHz and thermal budget excludes ASR/PASR optimization. |
| IS43TR16128B-125KBL (ISSI) | Same density, VFBGA-96, DDR3L-1600 (11-11-11); CL=11, CWL=7; supports ZQ but no dynamic ODT | Missing Rtt_WR and DLL-off mode; incompatible with JEDEC-compliant write leveling sequences | Choose for cost-sensitive industrial controls where DDR3L-2133 performance and advanced calibration are unnecessary. |
Compared with MT41K128M16JT-125:K and IS43TR16128B-125KBL, W631GU6NB-09 delivers 33% higher bandwidth and includes hardware-enforced calibration features essential for robust DDR3L-2133 implementation - making it the only option among the three qualified for full-speed operation with JEDEC write leveling and ASR/PASR power management.
Availability
W631GU6NB-09 is available at Aetrix Electronics and suitable for industrial PLC controllers, network edge routers, medical imaging systems, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3L-2133 performance.
Supply support for W631GU6NB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products serving industrial, automotive, and communications markets.
W631GU6NB-09 belongs to Winbond's DDR3L SDRAM product line, engineered for high-reliability embedded systems demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant signal integrity at speeds up to 2133 MT/s.
FAQ
What is the maximum data rate supported by W631GU6NB-09?
W631GU6NB-09 supports DDR3L-2133 operation at 2133 MT/s, corresponding to a 1066 MHz clock frequency (tCK = 0.938 ns minimum). This is validated for the -09 speed grade under 0°C ≤ TCASE ≤ 95°C with CL=14 and CWL=10, meeting JEDEC JESD79-3F specification requirements for DDR3L-2133 (14-14-14).
Does W631GU6NB-09 support both 1.35 V and 1.5 V operation?
Yes, W631GU6NB-09 is fully backward compatible with standard DDR3 1.5 V operation (VDD/VDDQ = 1.5 V ±0.075 V) while natively designed for DDR3L 1.35 V (1.283 V to 1.45 V). Voltage switching between modes is supported via controlled VDD/VDDQ ramp and MR register reconfiguration, as specified in Section 11.4 of the datasheet.
How does the ZQ calibration function in W631GU6NB-09?
W631GU6NB-09 performs ZQ calibration by referencing an external 240 Ω ±1% resistor connected to the ZQ pin. The internal circuitry adjusts output driver strength and ODT impedance to match this reference, ensuring ±10% accuracy across voltage and temperature. Calibration is initiated via ZQCL command and must be performed after power-up and periodically during operation.
What is the purpose of the Multi-Purpose Register (MPR) in W631GU6NB-09?
The MPR in W631GU6NB-09 stores a fixed 128-bit pattern (0x00000000) that can be read back via standard READ commands. It is used for system-level timing margin testing - by comparing MPR read data eye diagrams against known-good patterns, designers verify signal integrity margins without requiring custom test firmware or memory initialization.
Can W631GU6NB-09 operate reliably above 85°C case temperature?
Yes, W631GU6NB-09 is rated for 0°C ≤ TCASE ≤ 95°C. Above 85°C, automatic refresh interval must be halved (tREFI = 3.9 µs) using either Auto Self-Refresh (ASR) mode (MR2[7:6] = 10b) or Manual Self-Refresh with Extended Temperature Range (MR2[7:6] = 01b), as defined in Section 8.3.3.3 of the datasheet.
W631GU6NB-09 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6NB-09 FAQ
1.How can I place an order for W631GU6NB-09 through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6NB-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6NB-09 reliable?
The price and inventory of W631GU6NB-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6NB-09 is usually 5 days.
3.What payment methods are accepted for W631GU6NB-09?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6NB-09 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6NB-09?
W631GU6NB-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6NB-09 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6NB-09?
For technical support, including W631GU6NB-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6NB-09 requirements.
6.How does Aetrix verify that W631GU6NB-09 is sourced from the original manufacturer or authorized distributors?
All W631GU6NB-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6NB-09 meets industry standards.
7.What is the process for return or replacement of W631GU6NB-09?
All W631GU6NB-09 units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6NB-09, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6NB-09 part is unused and in its original packaging.
Return procedure for W631GU6NB-09:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6NB-09 Tags
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M24C02-WMN6TP
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