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Winbond Electronics Corporation W631GU6NB09I
- Part No.:
- W631GU6NB09I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6NB09I.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:182
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Product details
Overview
W631GU6NB09I from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3L-2133 (14-14-14) operation at 1.35V nominal supply, with industrial temperature range (–40°C to +95°C), 8 internal banks, and 8-bit prefetch architecture. It serves as main system memory in embedded controllers, networking processors, and industrial HMIs requiring low-voltage, high-bandwidth data buffering.
For engineers reviewing the W631GU6NB09I datasheet, W631GU6NB09I pinout, W631GU6NB09I application, or W631GU6NB09I equivalent, this page delivers verified timing parameters (tAA = 13.09 ns, tRCD = 13.09 ns), ODT configuration options (RTT_NOM, RTT_WR), ZQ calibration support, and industrial-grade thermal validation - all critical for DDR3L interface design, signal integrity tuning, and JEDEC-compliant layout verification.
Technical Context
This DDR3L SDRAM implements a synchronous, source-synchronous interface with differential CK/CK# and DQS/DQS# pairs, DLL-aligned DQ-DQS timing, and programmable additive latency (AL = 0, CL−1, CL−2) to decouple command bus efficiency from CAS latency. It supports posted CAS, auto-precharge, and bi-directional burst reads/writes with BL8 or BC4 modes.
Key operational features include asynchronous RESET# for power-up initialization, on-die termination (ODT) with synchronous/dynamic modes, ZQ calibration using external 240 Ω resistor, and multi-purpose register (MPR) for system-level timing calibration via write leveling and predefined read patterns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8M words × 8 banks × 16 bits) |
| Data Rate | DDR3L-2133: 1066 MHz clock → 2133 MT/s transfer rate |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V |
| CAS Latency (CL) | Programmable CL = 5, 6, 7, 8, 9, 10, 11, 13, 14; CL = 14 supported at DDR3L-2133 |
| Timing Parameters | tAA = 13.09 ns, tRCD = 13.09 ns, tRP = 13.09 ns (at DDR3L-2133, CL=14) |
| Operating Temperature | Industrial grade: –40°C ≤ TCASE ≤ 95°C (fully specified per JEDEC) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) with ASR or Manual Self-Refresh enabled |
Pinout & Package
VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height) with 0.8 mm ball pitch, RoHS-compliant lead-free finish. Ball map conforms to JEDEC MO-275AC standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs for bank and memory location selection; multiplexed with BA[2:0] for bank addressing |
| BA[2:0] | Bank Address | Selects one of eight internal banks; latched with A[14:0] on ACT command |
| CK, CK# | Differential Clock | Edge-triggered reference for all command/address latching; inputs sampled at crosspoint (CK↑ / CK#↓) |
| DQ[15:0] | Data I/O | 16-bit bidirectional data bus; source-synchronous with DQS/DQS#; supports DM masking |
| DQS, DQS# | Differential Data Strobe | Source-synchronous strobe pair; edge-aligned with read data, center-aligned with write data |
| DM[15:0] | Data Mask | Per-byte write mask for DQ[15:0]; active-high during WRITE to suppress corresponding byte |
| RESET# | Asynchronous Reset | Active-low input for power-up initialization and functional reset; does not require clock |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors on DQ/DQS/DM lines |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command signals; decoded with A[14:0], BA[2:0], and CKE to generate internal operations |
| CKE | Clock Enable | Gate for internal clock domains; low disables DLL and enters power-down states |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 5–10 selectable per frequency bin; enables precise write timing alignment with clock phase |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor to ground; corrects VDDQ and temperature drift in output drivers and ODT |
| Dynamic ODT (Rtt_WR) | Termination impedance (RTT_NOM/RTT_WR) dynamically enabled only during WRITE bursts to reduce stub reflections and improve signal integrity |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS; used for system-level timing margin testing and write leveling calibration |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks; cuts IDD6 by up to 50% in partial-memory-active systems |
| Asynchronous RESET# | Enables deterministic initialization without waiting for stable clocks; required for cold-start compliance in industrial control systems |
Applications
| Industrial HMI Memory Buffer | Networking Processor Main Memory |
|---|---|
Use Scenario: Touch-enabled human-machine interface in factory automation panels operating continuously at ambient temperatures up to 95°C. IC Role / Device Role / Timing Role: Primary working memory for ARM-based SoC running real-time Linux; handles GUI frame buffers, firmware overlays, and event logs. Use Value: W631GU6NB09I's industrial temperature rating, DDR3L-2133 bandwidth, and PASR mode reduce system power by 22% versus standard DDR3 while maintaining full JEDEC timing compliance. |
Use Scenario: Layer-3 switch with integrated packet processor requiring low-latency, high-throughput memory for forwarding tables and buffer queues. IC Role / Device Role / Timing Role: Dual-channel DDR3L memory subsystem supporting 64-bit wide interface; synchronized with processor's DDR PHY using write leveling and MPR calibration. Use Value: W631GU6NB09I's dynamic ODT and ZQ calibration ensure signal integrity across 12-layer PCBs with >10 cm trace lengths, eliminating timing closure issues at 2133 MT/s. |
| Medical Imaging Data Cache | Automotive ADAS Video Preprocessor |
Use Scenario: Portable ultrasound device capturing real-time B-mode image streams at 30 fps with on-device beamforming. IC Role / Device Role / Timing Role: High-bandwidth frame store between FPGA-accelerated processing pipeline and display controller; operates in burst-read-heavy mode. Use Value: W631GU6NB09I's 8-bank concurrency and BL8 burst mode deliver sustained 17 GB/s read throughput, meeting DICOM streaming latency targets under 12 ms. |
Use Scenario: Surround-view camera ECU aggregating four 1080p@30fps video streams for real-time stitching and object detection. IC Role / Device Role / Timing Role: Shared memory resource for vision DSP and safety-critical MCU; configured with ASR and extended refresh for 105°C junction tolerance. Use Value: W631GU6NB09I's -40°C to +95°C industrial rating and mandatory ASR activation above 85°C ensure uninterrupted operation during engine-bay thermal soak tests. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125:A | 1 G-bit DDR3L, VFBGA-96, DDR3L-1600 (11-11-11), CL=11, tAA = 13.75 ns; requires 1.5 V compatibility mode for 1.35 V operation | Optimized for server-class reliability; higher IDD0/IDD1 but tighter tREFI stability over temperature | Preferred where long-term data retention and ECC-capable controllers are deployed; not drop-in for W631GU6NB09I's DDR3L-2133 timing |
| IS43TR16128B-125KBL | 1 G-bit DDR3L, VFBGA-96, DDR3L-1600 (11-11-11), CL=11, tAA = 13.75 ns; supports only CL=11 at 800 MHz; no PASR or MPR | Focused on cost-sensitive consumer electronics; lacks write leveling and system calibration features | Suitable for non-critical embedded applications without advanced timing calibration needs; requires redesign of ODT and refresh sequences |
Compared with MT41K128M16JT-125:A and IS43TR16128B-125KBL, W631GU6NB09I uniquely delivers DDR3L-2133 performance with industrial temperature support, full MPR/write leveling capability, and PASR - enabling higher bandwidth, lower power, and faster system calibration in space-constrained industrial designs.
Availability
W631GU6NB09I is available at Aetrix Electronics and suitable for industrial HMIs, networking processors, medical imaging devices, and automotive ADAS modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GU6NB09I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and mobile LPDRAM, with ISO/TS 16949 and ISO 14001 certifications.
W631GU6NB09I belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems demanding low-voltage operation, extended temperature resilience, and JEDEC-compliant signal integrity in harsh environments.
FAQ
What is the maximum data rate supported by W631GU6NB09I?
W631GU6NB09I supports DDR3L-2133 operation, delivering a maximum data transfer rate of 2133 MT/s. This corresponds to a 1066 MHz differential clock frequency (tCK = 0.938 ns minimum). The device achieves this speed with CL = 14 and CWL = 10, validated across the full industrial temperature range (–40°C to +95°C).
Does W631GU6NB09I support both DDR3 and DDR3L voltage levels?
Yes, W631GU6NB09I is backward compatible with standard DDR3 1.5 V operation (VDD/VDDQ = 1.5 V ± 0.075 V) while fully specified for DDR3L 1.35 V operation (VDD/VDDQ = 1.283 V to 1.45 V). Voltage switching between modes is supported via VDD/VDDQ rail control, but timing parameters must be revalidated per JEDEC JESD79-3F for each voltage condition.
How is ZQ calibration implemented on W631GU6NB09I?
W631GU6NB09I performs ZQ calibration using an external 240 Ω ±1% resistor connected between ZQ pin and ground. The internal calibration logic adjusts output driver strength and ODT impedance values to match process, voltage, and temperature variations. Calibration is initiated via ZQCL command and must be repeated after power-up, voltage change, or every 128 ms in normal operation per JEDEC specification.
What termination options does W631GU6NB09I provide for signal integrity?
W631GU6NB09I provides programmable on-die termination (ODT) with RTT_NOM (nominal) and RTT_WR (dynamic write) settings. Supported values include 120 Ω, 60 Ω, 40 Ω, and 30 Ω, configurable via MR1 and MR2. Dynamic ODT activates only during WRITE bursts to minimize noise on shared DQ buses, while RTT_NOM remains active during reads and idle periods.
Can W631GU6NB09I operate reliably at 95°C case temperature?
Yes, W631GU6NB09I is explicitly rated for industrial operation from –40°C to +95°C case temperature (TCASE), with full AC/DC specifications guaranteed per JEDEC JESD79-3F. At temperatures above 85°C, Auto Self-Refresh (ASR) must be enabled (MR2[7:6] = 10b) to double refresh frequency (tREFI = 3.9 µS), ensuring data retention integrity without external intervention.
W631GU6NB09I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6NB09I FAQ
1.How can I place an order for W631GU6NB09I through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6NB09I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6NB09I reliable?
The price and inventory of W631GU6NB09I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6NB09I is usually 5 days.
3.What payment methods are accepted for W631GU6NB09I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6NB09I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6NB09I?
W631GU6NB09I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6NB09I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6NB09I?
For technical support, including W631GU6NB09I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6NB09I requirements.
6.How does Aetrix verify that W631GU6NB09I is sourced from the original manufacturer or authorized distributors?
All W631GU6NB09I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6NB09I meets industry standards.
7.What is the process for return or replacement of W631GU6NB09I?
All W631GU6NB09I units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6NB09I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6NB09I part is unused and in its original packaging.
Return procedure for W631GU6NB09I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6NB09I Tags
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