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Winbond Electronics Corporation W631GU6NB09I TR
- Part No.:
- W631GU6NB09I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6NB09I TR.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,995
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Product details
Overview
W631GU6NB09I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3L-2133 (14-14-14) operation at 1.35V nominal supply, with industrial temperature range (–40°C to +95°C), 96-ball VFBGA package, and full JEDEC-compliant features including ZQ calibration, dynamic ODT, write leveling, and programmable CAS Write Latency (CWL=7). It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring low-voltage, high-bandwidth DRAM.
For engineers reviewing the W631GU6NB09I TR datasheet, W631GU6NB09I TR pinout, W631GU6NB09I TR application, or W631GU6NB09I TR equivalent, this page delivers verified electrical specs, ball mapping, thermal operating limits, DDR3L timing compliance, and real-world substitution guidance - all validated against Winbond's official A01 revision datasheet (Dec. 2020).
Technical Context
This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, DLL-aligned DQ/DQS timing, and differential CK/CK# clocking. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and multi-purpose register (MPR) readout for system-level timing calibration.
Key operational modes include self-refresh (IDD6 ≤ 10 mA), active power-down, precharge power-down, and partial array self-refresh (PASR). The device enables write leveling via MPR and supports dynamic ODT (Rtt_WR) with configurable termination impedances during write bursts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (8,388,608 words × 8 banks × 16 bits) |
| Data Bus Width | 16-bit bidirectional I/O interface, compatible with x16 memory channel designs |
| Speed Grade | DDR3L-2133 (14-14-14), fCKMAX = 1066 MHz, tCK(AVG) = 0.938–1.07 ns for CL14/CWL10 |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible with 1.5 V DDR3 systems |
| Operating Temperature | Industrial grade: –40°C ≤ TCASE ≤ +95°C per JEDEC JESD22-A104 |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height), RoHS-compliant, lead-free |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C), requiring doubled refresh rate above 85°C |
| Power Consumption | IDD0 ≤ 90 mA (active), IDD6 ≤ 10 mA (self-refresh), enabling low-power embedded deployment |
Pinout & Package
VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch; window-type BGA layout optimized for signal integrity and thermal dissipation in dense PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs for bank and memory location selection (A14 used for bank select) |
| BA0–BA2 | Bank Address | Select one of eight internal banks; enables concurrent bank operations |
| CK, CK# | Differential Clock | Edge-triggered command latch reference; inputs sampled at crosspoint (CK↑ / CK#↓) |
| CS#, RAS#, CAS#, WE# | Command Control | Active-low signals defining READ, WRITE, ACTIVATE, PRECHARGE, REFRESH commands |
| RESET# | Asynchronous Reset | Initiates power-up initialization sequence and resets internal state machines |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; double-data-rate transfers synchronized to DQS/DQS# |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data |
| DM0–DM1 | Data Mask | Per-byte write mask (2×8-bit); suppresses write data on corresponding DQ lanes |
| ODT | On-Die Termination Enable | Controls dynamic ODT activation during writes; supports Rtt_NOM, Rtt_WR configurations |
| VDD, VDDQ | Power Supplies | Separate 1.35 V core (VDD) and I/O (VDDQ) supplies; allows independent voltage scaling |
| VSS | Ground | Common reference for all digital and analog circuitry; multiple balls ensure low-impedance return path |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1% resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic On-Die Termination (ODT) | Configurable Rtt_NOM (60/120/40 Ω) and Rtt_WR (60/120/40 Ω) via MR1/MR2; improves signal integrity without external resistors |
| Write Leveling Support | Hardware-assisted timing calibration using MPR read pattern and DQS delay adjustment; enables robust DDR3L interface timing closure |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor; maintains output driver and ODT impedance accuracy across voltage/temperature |
| Extended Temperature Operation | Validated for –40°C to +95°C case temperature with full AC/DC spec compliance and mandatory ASR/PASR support above 85°C |
| Low-Voltage Compatibility | 1.35 V operation reduces power by ~20% vs. 1.5 V DDR3; retains pinout and command set compatibility for seamless migration |
| Multi-Purpose Register (MPR) | Predefined 128-bit calibration pattern accessible via READ command; used for system-level timing margin analysis and DQ/DQS deskew |
Applications
| Industrial PLC Memory | Network Edge Router Buffer |
|---|---|
Use Scenario: Real-time control logic execution and I/O data buffering in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and cyclic process data storage; operates under continuous thermal stress and vibration. Use Value: Industrial temperature rating (–40°C to +95°C) and low IDD6 (≤10 mA) enable reliable long-term operation without forced cooling or derating. |
Use Scenario: Packet buffering and forwarding table storage in carrier-grade edge routers handling 1–10 Gbps traffic aggregation. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory subsystem supporting parallel packet processing engines and TCAM lookups. Use Value: DDR3L-2133 speed (1066 MHz clock) and 16-bit bus deliver >3.4 GB/s peak bandwidth, meeting line-rate buffer requirements. |
| Medical Imaging Controller | Automotive ADAS Domain Controller |
Use Scenario: Frame buffer and algorithm scratchpad in ultrasound or MRI controller boards requiring deterministic memory access and EMI resilience. IC Role / Device Role / Timing Role: Dual-role memory: stores acquired image frames and provides scratch space for real-time FFT and filtering pipelines. Use Value: Differential CK/CK# and DQS/DQS# interfaces plus dynamic ODT minimize jitter and crosstalk in noisy medical EMC environments. |
Use Scenario: Vision processing memory in automotive camera-based ADAS modules (e.g., lane departure, pedestrian detection) operating in vehicle cabin environments. IC Role / Device Role / Timing Role: Low-power working memory for CNN inference engines and sensor fusion algorithms running under ASIL-B constraints. Use Value: 1.35 V operation reduces thermal load in sealed enclosures; PASR and ASR modes cut self-refresh current during idle vision cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-2BLI | 1 Gbit x16 DDR3L, same VFBGA-96 package, but rated for –40°C to +90°C (not +95°C); CL11/CWL7 only at 1866 MT/s | Limited to 1866 MT/s max; lacks support for DDR3L-2133 timing bin and extended 95°C operation | Select when DDR3L-1866 suffices and +95°C operation is not required; verify ASR/PASR implementation matches Winbond's MR2 configuration. |
| MT41K128M16HA-125:E | 1 Gbit x16 DDR3L, 96-ball FBGA, but commercial temp (0°C to +90°C); supports DDR3L-1600 only (CL11/CWL7) | No industrial temperature rating; no support for 2133/1866 bins or 95°C case operation | Use only in non-industrial ambient environments; requires redesign for thermal management if replacing W631GU6NB09I TR in existing industrial designs. |
Compared with IS43TR16128B-2BLI and MT41K128M16HA-125:E, the W631GU6NB09I TR uniquely delivers DDR3L-2133 performance with full industrial temperature validation up to +95°C case, integrated write leveling and MPR calibration, and JEDEC-compliant ASR/PASR behavior - making it the only option among the three qualified for high-reliability, thermally constrained DDR3L-2133 deployments.
Availability
W631GU6NB09I TR is available at Aetrix Electronics and suitable for industrial PLCs, network edge routers, medical imaging controllers, and automotive ADAS domain controllers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GU6NB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU6NB09I TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for high-reliability embedded systems demanding low-voltage operation, extended temperature tolerance, and JEDEC-compliant signal integrity features.
FAQ
What is the maximum clock frequency supported by the W631GU6NB09I TR?
The W631GU6NB09I TR supports DDR3L-2133 operation with a maximum clock frequency (fCKMAX) of 1066 MHz, corresponding to a 0.938–1.07 ns average clock period for CL14/CWL10 configurations. This is validated across the full industrial temperature range (–40°C to +95°C) per Winbond's A01 datasheet.
Does the W631GU6NB09I TR support both DDR3L and standard DDR3 voltage levels?
Yes, the W631GU6NB09I TR is backward-compatible with 1.5 V DDR3 systems. It operates at 1.35 V nominal (range: 1.283 V–1.45 V) for DDR3L mode and accepts 1.5 V ±0.075 V for legacy DDR3 compatibility, maintaining full command, timing, and pinout equivalence.
How does the W631GU6NB09I TR handle refresh at elevated temperatures?
Above 85°C case temperature, the W631GU6NB09I TR requires doubling the refresh rate (tREFI = 3.9 µS instead of 7.8 µS). This is achieved either via Auto Self-Refresh (ASR) enabled in MR2 (A6=1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6=0b, A7=1b), both fully supported in the device.
What package type and ball count does the W631GU6NB09I TR use?
The W631GU6NB09I TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 1.0 mm thickness and 0.8 mm ball pitch. It is RoHS-compliant and lead-free, matching JEDEC MO-276AA standard.
Is write leveling supported on the W631GU6NB09I TR, and how is it implemented?
Yes, write leveling is fully supported on the W631GU6NB09I TR. It uses the Multi-Purpose Register (MPR) to output a predefined calibration pattern while the memory controller adjusts DQS delay to align write strobes with DQ edges - a hardware-assisted procedure defined in JEDEC DDR3L standards and validated in Winbond's datasheet Section 8.9.
W631GU6NB09I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6NB09I TR FAQ
1.How can I place an order for W631GU6NB09I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6NB09I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6NB09I TR reliable?
The price and inventory of W631GU6NB09I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6NB09I TR is usually 5 days.
3.What payment methods are accepted for W631GU6NB09I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6NB09I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6NB09I TR?
W631GU6NB09I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6NB09I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6NB09I TR?
For technical support, including W631GU6NB09I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6NB09I TR requirements.
6.How does Aetrix verify that W631GU6NB09I TR is sourced from the original manufacturer or authorized distributors?
All W631GU6NB09I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6NB09I TR meets industry standards.
7.What is the process for return or replacement of W631GU6NB09I TR?
All W631GU6NB09I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6NB09I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6NB09I TR part is unused and in its original packaging.
Return procedure for W631GU6NB09I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6NB09I TR Tags
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