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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W631GU6NB-09 TR

Name: W631GU6NB-09 TR
Brand: Winbond Electronics Corporation
SKU: W631GU6NB-09 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W631GU6NB-09 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 96-VFBGA

Datasheet:: W631GU6NB-09 TR.pdf

Description:: IC DRAM 1GBIT PAR 96VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W631GU6NB-09 TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3L-2133 (14-14-14) speed grade with 1.35V nominal VDD/VDDQ supply, CAS Latency up to CL=14, and industrial-grade temperature range (0°C to 95°C). It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring low-voltage, high-bandwidth synchronous DRAM.

For engineers reviewing the W631GU6NB-09 TR datasheet, W631GU6NB-09 TR pinout, W631GU6NB-09 TR application, or W631GU6NB-09 TR equivalent, this page delivers verified timing parameters (tAA = 13.09 ns, tRCD = 13.09 ns), package mapping (VFBGA-96, 7.5 × 13 mm), ODT configuration support, ZQ calibration capability, and DDR3L-2133 compliance - all confirmed from Winbond's official A01 revision datasheet (Dec. 2020).

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3L architecture with differential CK/CK# clock inputs and bi-directional DQS/DQS# strobes. It supports programmable CAS Write Latency (CWL = 5–10), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.

Key operational features include asynchronous RESET#, on-die termination (ODT) with dynamic Rtt_WR mode, ZQ calibration using external 240 Ω resistor, Multi-Purpose Register (MPR) for system-level timing calibration, and write leveling for DQ-DQS skew compensation - all required for JEDEC-compliant DDR3L-2133 interface implementation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 G-bit (8M words × 8 banks × 16 bits); enables 16 MB of 16-bit wide memory space per device.
Data Rate	2133 MT/s (DDR3L-2133); requires 1066 MHz differential clock input for full-speed operation.
CAS Latency (CL)	Configurable CL = 5–14; CL=14 at DDR3L-2133 ensures tAA ≤ 13.09 ns for reliable read access timing.
VDD / VDDQ	1.35 V nominal (1.283–1.45 V); reduces power vs. 1.5 V DDR3 while maintaining backward compatibility.
Package	VFBGA-96 (7.5 × 13 mm, 1.0 mm height); RoHS-compliant, lead-free window BGA optimized for high-density PCB layout.
Refresh Interval	tREFI = 7.8 µs (0°C–85°C); doubles to 3.9 µs above 85°C, mandating ASR or Manual Self-Refresh activation.
Operating Temp	0°C ≤ TCASE ≤ 95°C; validated across full JEDEC AC/DC specs for commercial/industrial use cases.

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 96 solder balls arranged in 9 × 11 staggered grid (including corner voids). Ball pitch: 0.8 mm. Compliant with JEDEC MO-270DA standard.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	Row/column address bits for bank and memory location selection; A12–A14 used for bank addressing in 8-bank mode.
BA0–BA2	Bank Address Inputs	Select one of eight internal banks; decoded with A12–A14 for full bank addressing.
CK / CK#	Differential Clock Inputs	Edge-triggered reference for all command latching; inputs sampled at cross-point (CK↑ & CK#↓).
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; synchronized to DQS/DQS# edges during reads/writes.
DQS / DQS#	Differential Data Strobe	Source-synchronous strobe: center-aligned with write data, edge-aligned with read data.
DM0–DM1	Data Mask	Per-byte mask control for write operations; DM0 masks DQ0–7, DM1 masks DQ8–15.
RESET#	Asynchronous Reset	Active-low signal initiating power-up initialization sequence and functional reset without clock dependency.
ODT	On-Die Termination Control	Dynamic enable/disable of termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines per MR1/MR2 settings.
ZQ	ZQ Calibration Reference	Connects to external 240 Ω ±1% resistor to ground; calibrates output driver strength and ODT impedance.

Key Features

Feature	Design Value
DDR3L-2133 Compliance	Meets JEDEC JESD79-3F spec for 1066 MHz clock, 14-14-14 timing, and 1.35 V operation - enabling drop-in replacement for legacy DDR3L-2133 systems.
Programmable CWL & AL	CWL = 5–10 and AL = 0/CL−1/CL−2 allow precise write latency tuning (WL = AL + CWL) to match controller timing margins.
Write Leveling Support	Hardware-assisted DQ-DQS skew calibration via MRS entry into write leveling mode; eliminates manual board-level timing tuning.
ZQ Calibration	Single-pin ZQ interface calibrates both output driver impedance (RDS_ON) and ODT values (RTT_NOM/RTT_WR) to ±1% accuracy over voltage/temperature.
Dynamic ODT (Rtt_WR)	Enables on-the-fly ODT activation only during write bursts, reducing standby power and improving signal integrity on shared DQ buses.

Applications

Industrial PLC Memory	Network Edge Router Buffer
Use Scenario: Real-time logic execution and I/O state buffering in programmable logic controllers operating in factory-floor environments with ambient temperatures up to 95°C. IC Role / Device Role / Timing Role: Primary working memory interfacing directly to ARM Cortex-A series MPU; handles burst reads/writes under deterministic scan-cycle deadlines. Use Value: DDR3L-2133 bandwidth (34.1 GB/s peak) sustains multi-threaded ladder logic processing; 1.35 V operation lowers thermal load in sealed enclosures.	Use Scenario: Packet buffering and forwarding table storage in compact 1U enterprise edge routers with space-constrained PCB layouts. IC Role / Device Role / Timing Role: High-speed packet buffer co-located with network processor; supports concurrent read-modify-write cycles for ACL and QoS lookups. Use Value: VFBGA-96 footprint minimizes board area; dynamic ODT and write leveling ensure signal integrity at 1066 MHz across 4-layer routing.
Medical Imaging Display Controller	Automotive ADAS Domain Controller
Use Scenario: Frame buffer and image pipeline memory in diagnostic ultrasound displays requiring continuous 1080p60 rendering with zero frame drop. IC Role / Device Role / Timing Role: Dual-port-accessible memory bank managed by display engine DMA; configured with CL=11/CWL=8 for balanced latency/bandwidth. Use Value: 2K-byte page size optimizes sequential pixel fetches; tRC = 46.09 ns enables rapid row activation for real-time video streaming.	Use Scenario: Sensor fusion memory in centralized ADAS domain controllers processing radar, camera, and ultrasonic inputs under automotive temperature stress. IC Role / Device Role / Timing Role: Shared memory resource for SoC subsystems; operates in Auto Self-Refresh (ASR) mode above 85°C per MR2 configuration. Use Value: Extended 95°C case rating and mandatory ASR support (MR2 A6=1b) maintain data retention during prolonged high-ambient operation.

Industrial PLC Memory

Network Edge Router Buffer

Use Scenario: Real-time logic execution and I/O state buffering in programmable logic controllers operating in factory-floor environments with ambient temperatures up to 95°C.

IC Role / Device Role / Timing Role: Primary working memory interfacing directly to ARM Cortex-A series MPU; handles burst reads/writes under deterministic scan-cycle deadlines.

Use Value: DDR3L-2133 bandwidth (34.1 GB/s peak) sustains multi-threaded ladder logic processing; 1.35 V operation lowers thermal load in sealed enclosures.

Use Scenario: Packet buffering and forwarding table storage in compact 1U enterprise edge routers with space-constrained PCB layouts.

IC Role / Device Role / Timing Role: High-speed packet buffer co-located with network processor; supports concurrent read-modify-write cycles for ACL and QoS lookups.

Use Value: VFBGA-96 footprint minimizes board area; dynamic ODT and write leveling ensure signal integrity at 1066 MHz across 4-layer routing.

Medical Imaging Display Controller

Automotive ADAS Domain Controller

Use Scenario: Frame buffer and image pipeline memory in diagnostic ultrasound displays requiring continuous 1080p60 rendering with zero frame drop.

IC Role / Device Role / Timing Role: Dual-port-accessible memory bank managed by display engine DMA; configured with CL=11/CWL=8 for balanced latency/bandwidth.

Use Value: 2K-byte page size optimizes sequential pixel fetches; tRC = 46.09 ns enables rapid row activation for real-time video streaming.

Use Scenario: Sensor fusion memory in centralized ADAS domain controllers processing radar, camera, and ultrasonic inputs under automotive temperature stress.

IC Role / Device Role / Timing Role: Shared memory resource for SoC subsystems; operates in Auto Self-Refresh (ASR) mode above 85°C per MR2 configuration.

Use Value: Extended 95°C case rating and mandatory ASR support (MR2 A6=1b) maintain data retention during prolonged high-ambient operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K128M16JT-125K	1 G-bit DDR3L, 96-ball VFBGA, DDR3L-1600 (11-11-11), CL=11, tAA = 13.75 ns; 1.283–1.45 V supply.	Lower max data rate (1600 MT/s) and longer tAA limit system bandwidth; suitable where 2133 MT/s is not required.	Select when cost sensitivity outweighs peak bandwidth need and board layout allows same 7.5×13 mm footprint.
IS43TR16128B-125KBL	1 G-bit DDR3L, 96-ball VFBGA, DDR3L-1600 (11-11-11), CL=11, tAA = 13.75 ns; supports 105°C extended temp with 09J-equivalent rating.	Lacks DDR3L-2133 support and write leveling; requires external calibration; rated to 105°C but no ASR mode.	Choose for extended-temperature designs needing 105°C rating without ASR dependency, accepting reduced timing flexibility.

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, W631GU6NB-09 TR delivers higher bandwidth (2133 MT/s), tighter tAA (13.09 ns), integrated write leveling, and JEDEC-compliant ASR - making it optimal for performance-critical industrial and networking applications where timing margin and thermal resilience are prioritized.

Availability

W631GU6NB-09 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-lifecycle assurance, and guaranteed DDR3L-2133 performance.

Supply support for W631GU6NB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W631GU6NB-09 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for low-power, high-reliability embedded systems demanding JEDEC-compliant DDR3L operation at extended temperature ranges and 2133 MT/s data rates.

FAQ

What is the maximum clock frequency supported by W631GU6NB-09 TR?

W631GU6NB-09 TR supports a maximum differential clock frequency of 1066 MHz, enabling DDR3L-2133 operation (2133 MT/s). This is validated under JEDEC conditions with tCK(AVG) ≤ 0.938 ns for CL=14/CWL=10, and requires stable 1.35 V supply and proper PCB layout for signal integrity.

Does W631GU6NB-09 TR support both DDR3 and DDR3L voltage levels?

Yes, W631GU6NB-09 TR is backward compatible with 1.5 V DDR3 operation (±0.075 V) while fully compliant with DDR3L 1.35 V specifications. Voltage switching between modes is supported per Section 11.4 of the datasheet, but mixed-mode operation is not allowed - VDD and VDDQ must be set to the same level.

How is refresh handled at elevated temperatures for W631GU6NB-09 TR?

At case temperatures above 85°C, W631GU6NB-09 TR requires either Auto Self-Refresh (ASR) mode (MR2 A6=1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6=0b, A7=1b) to maintain tREFI = 3.9 µs. Standard refresh (7.8 µs) is only valid up to 85°C.

What package type and ball count does W631GU6NB-09 TR use?

W631GU6NB-09 TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch. It conforms to JEDEC MO-270DA and is RoHS-compliant with lead-free terminations.

Can W631GU6NB-09 TR operate without ZQ calibration?

No - ZQ calibration is mandatory for production operation. The ZQ pin must be connected to a 240 Ω ±1% resistor to ground, and ZQ calibration commands (ZQCL, ZQCS) must be issued after power-up and periodically during operation to maintain output driver and ODT impedance accuracy within ±1%.

W631GU6NB-09 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 96-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3L

Memory Size:: 1Gbit

Memory Organization:: 64M x 16

Memory Interface:: Parallel

Clock Frequency:: 1.066 GHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.283V ~ 1.45V, 1.425V ~ 1.575V

Operating Temperature:: 0°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 96-VFBGA (7.5x13)

W631GU6NB-09 TR FAQ

1.How can I place an order for W631GU6NB-09 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GU6NB-09 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GU6NB-09 TR reliable?

The price and inventory of W631GU6NB-09 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6NB-09 TR is usually 5 days.

3.What payment methods are accepted for W631GU6NB-09 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6NB-09 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GU6NB-09 TR?

W631GU6NB-09 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GU6NB-09 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GU6NB-09 TR?

For technical support, including W631GU6NB-09 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6NB-09 TR requirements.

6.How does Aetrix verify that W631GU6NB-09 TR is sourced from the original manufacturer or authorized distributors?

All W631GU6NB-09 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6NB-09 TR meets industry standards.

7.What is the process for return or replacement of W631GU6NB-09 TR?

All W631GU6NB-09 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6NB-09 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GU6NB-09 TR part is unused and in its original packaging.

Return procedure for W631GU6NB-09 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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