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Winbond Electronics Corporation W631GU6NB-11
- Part No.:
- W631GU6NB-11
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6NB-11.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,185
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Product details
Overview
W631GU6NB-11 from Winbond Electronics is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3L-1866 speed grade (13-13-13 CL-tRCD-tRP), 1.35V nominal VDD/VDDQ supply, and industrial temperature range (0°C to 95°C). It delivers high-bandwidth memory for embedded controllers, networking processors, and multimedia SoCs requiring low-voltage, high-density DRAM with ZQ calibration and dynamic ODT.
For engineers reviewing the W631GU6NB-11 datasheet, W631GU6NB-11 pinout, W631GU6NB-11 application, or W631GU6NB-11 equivalent, this device requires attention to CAS Write Latency (CWL=7), additive latency (AL=0/CL−1/CL−2), DLL-on/off switching timing, and VFBGA-96 ball mapping for signal integrity in high-speed DDR3L interfaces.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable 1866 MT/s operation under JEDEC-compliant timing constraints.
It supports programmable mode registers (MR0–MR3) for CAS Latency (CL=5–11), CWL (5–9), PASR, ASR, dynamic ODT (Rtt_WR), and write leveling. The asynchronous RESET# pin enables deterministic power-up initialization, while ZQ calibration adjusts output driver and ODT impedance using an external 240Ω ±1% resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8M words × 8 banks × 16 bits) |
| Data Rate | 1866 MT/s (DDR3L-1866, tCK = 1.07 ns min) |
| CAS Latency | CL = 5, 6, 7, 8, 9, 10, 11 (tAA min = 13.91 ns at CL=13) |
| CAS Write Latency | CWL = 5–9 (CWL=7 required for DDR3L-1866 operation) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ±0.075 V |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (JEDEC industrial grade) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C with ASR or Manual Self-Refresh) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and window-type substrate. Ball layout follows JEDEC MO-270DA standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address during ACTIVE, READ, WRITE, PRECHARGE; multiplexed with bank address BA0–BA2 |
| BA0–BA2 | Bank Address Inputs | Select one of eight internal banks; sampled with A0–A14 on ACTIVE command |
| CK, CK# | Differential Clock Inputs | Edge-triggered command/address latching at crosspoint; define system clock period tCK |
| CS#, RAS#, CAS#, WE# | Command Inputs | Active-low signals decoded on CK rising edge to generate ACT, READ, WRITE, PRECHARGE, REFRESH |
| DM0–DM1 | Data Mask Inputs | Per-byte mask for 16-bit data bus; suppresses write data on corresponding DQ0–DQ15 during WRITE |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit double-data-rate interface; referenced to DQS/DQS# for setup/hold timing |
| DQS, DQS# | Differential Data Strobe | Source-synchronous strobe; edge-aligned with read data, center-aligned with write data |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors on DQ/DQS/DM lines |
| RESET# | Asynchronous Reset | Forces device into precharge power-down; initiates power-up initialization sequence when deasserted |
| VDD, VDDQ | Power Supplies | Core (VDD) and I/O (VDDQ) supplies; internally decoupled; require separate 1.35 V regulation |
| VSS | Ground | Common reference for all signals and supplies; multiple balls for low-inductance return path |
| ZQ | ZQ Calibration Reference | Connects to 240 Ω ±1% external resistor to ground; calibrates output driver strength and ODT values |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Additive Latency (AL) | AL = 0, CL−1, or CL−2 enables flexible command scheduling without sacrificing bandwidth efficiency |
| Dynamic On-Die Termination (Rtt_WR) | Configurable termination during WRITE bursts improves signal integrity on shared DQ/DQS buses |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor ensures consistent drive strength and ODT across voltage/temperature |
| Write Leveling Support | Enables per-lane DQS-to-CK skew compensation in controller PHY, critical for reliable 1866 MT/s timing closure |
| Multi-Purpose Register (MPR) | Predefined bit pattern (0x00000000) read via MRS allows system-level timing margin verification without user data access |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, extending battery life in portable applications |
Applications
| Networking Edge Router | Industrial HMI Controller |
|---|---|
Use Scenario: High-throughput packet buffering and forwarding in Layer 3 edge routers with multi-core NPU. IC Role / Device Role / Timing Role: Primary working memory for packet classification engines and flow table lookups, operating at DDR3L-1866 with CL=11 and CWL=7. Use Value: 1866 MT/s bandwidth meets line-rate 10Gbps Ethernet processing requirements while maintaining 1.35 V power efficiency. |
Use Scenario: Real-time UI rendering and PLC logic execution in fanless industrial HMIs with extended thermal envelope. IC Role / Device Role / Timing Role: Main system memory for ARM Cortex-A9/A15 SoC, leveraging PASR and ASR to minimize idle power at 95°C case temperature. Use Value: Industrial-grade 0°C–95°C operation with guaranteed tREFI = 3.9 µS refresh ensures reliability without forced cooling. |
| Medical Imaging Display | Automotive ADAS Video Preprocessor |
Use Scenario: Frame buffer and image pipeline memory in DICOM-compliant diagnostic displays with 4K resolution. IC Role / Device Role / Timing Role: Dual-channel memory subsystem supporting simultaneous read (display fetch) and write (GPU render) with auto-precharge and posted CAS. Use Value: BL8 burst length and interleaved read ordering maximize pixel throughput for real-time 60 Hz 4K video streaming. |
Use Scenario: Buffering raw sensor data from multiple camera inputs prior to FPGA-based object detection. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for vision preprocessing ASIC, using write leveling and MPR to validate timing margins across temperature. Use Value: DLL-off mode support allows graceful frequency scaling during thermal throttling without loss of data integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125:K (Micron) | Same density, VFBGA-96, DDR3L-1866; CL=11, CWL=7; requires 240 Ω ZQ resistor; supports same PASR/ASR modes | Identical industrial temp range (0°C–95°C); identical tREFI behavior above 85°C; validated in TI AM57x reference designs | Drop-in compatible for new designs; verify RESET# timing alignment and ODT exit latency match in controller firmware |
| IS43TR16128B-125KBL (ISSI) | Same density, VFBGA-96, DDR3L-1866; CL=11, CWL=7; supports write leveling and MPR; no DLL-off mode | Limited to 0°C–85°C operation; lacks DLL-off capability for dynamic frequency scaling; tREFI not rated >85°C | Suitable for cost-sensitive non-extended-temp applications; avoid where >85°C ambient or dynamic clock gating is required |
Compared with W631GU6NB-11, the Micron MT41K128M16JT-125:K offers identical thermal and electrical specifications with proven ecosystem support, while the ISSI IS43TR16128B-125KBL omits DLL-off and high-temp refresh extensions-making it unsuitable for thermally constrained ADAS or medical edge deployments.
Availability
W631GU6NB-11 is available at Aetrix Electronics and suitable for networking edge routers, industrial HMIs, medical imaging displays, and automotive ADAS video preprocessors requiring stable component supply with full JEDEC compliance and long-term lifecycle assurance.
Supply support for W631GU6NB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM for industrial, automotive, and communications markets.
The W631GU6NB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-constrained embedded systems needing JEDEC-compliant 1.35 V operation, extended temperature support, and advanced signal integrity features like write leveling and dynamic ODT.
FAQ
What is the maximum supported CAS Latency for W631GU6NB-11 at DDR3L-1866 speed?
The W631GU6NB-11 supports CAS Latency (CL) settings of 5, 6, 7, 8, 9, 10, and 11 for DDR3L-1866 operation. CL=11 corresponds to tAA = 13.91 ns minimum, matching the 13-13-13 timing bin. CL=13 and CL=14 are not supported in the -11 speed grade per datasheet Table 4.
Does W631GU6NB-11 support both 1.35 V and 1.5 V operation?
Yes, W631GU6NB-11 is fully backward-compatible with 1.5 V DDR3 systems. It operates at VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical) for DDR3L mode and accepts VDD/VDDQ = 1.425 V to 1.575 V (1.5 V ±0.075 V) for legacy DDR3 compatibility, with no hardware changes required.
How is ZQ calibration performed on W631GU6NB-11?
ZQ calibration on W631GU6NB-11 uses an external 240 Ω ±1% resistor connected between the ZQ pin and VSS. The device executes ZQCL (ZQ Calibration Long) or ZQCS (ZQ Calibration Short) commands to adjust output driver strength and ODT resistance values based on process/voltage/temperature variations.
What is the purpose of the Multi-Purpose Register (MPR) in W631GU6NB-11?
The MPR in W631GU6NB-11 outputs a fixed 0x00000000 pattern on DQ pins during read operations initiated via MRS. This enables system-level timing margin testing-such as DQS-to-DQ eye width measurement-without relying on actual stored data, simplifying validation of high-speed DDR3L interfaces.
Can W631GU6NB-11 operate reliably at 95°C case temperature?
Yes, W631GU6NB-11 is rated for 0°C ≤ TCASE ≤ 95°C with full JEDEC AC/DC specifications. At temperatures above 85°C, it requires either Auto Self-Refresh (ASR) enabled via MR2 or Manual Self-Refresh mode to maintain tREFI = 3.9 µS, ensuring data retention without external refresh intervention.
W631GU6NB-11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6NB-11 FAQ
1.How can I place an order for W631GU6NB-11 through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6NB-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6NB-11 reliable?
The price and inventory of W631GU6NB-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6NB-11 is usually 5 days.
3.What payment methods are accepted for W631GU6NB-11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6NB-11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6NB-11?
W631GU6NB-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6NB-11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6NB-11?
For technical support, including W631GU6NB-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6NB-11 requirements.
6.How does Aetrix verify that W631GU6NB-11 is sourced from the original manufacturer or authorized distributors?
All W631GU6NB-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6NB-11 meets industry standards.
7.What is the process for return or replacement of W631GU6NB-11?
All W631GU6NB-11 units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6NB-11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6NB-11 part is unused and in its original packaging.
Return procedure for W631GU6NB-11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6NB-11 Tags
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