Winbond Electronics Corporation W631GU6NB11I

Overview

W631GU6NB11I from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35 V nominal supply with industrial temperature support (–40°C to +95°C). It delivers 1866 MT/s data rates (DDR3L-1866, CL=13), features eight internal banks, 8-bit prefetch architecture, and supports programmable CAS Latency (CL=5–13), CWL (5–9), and additive latency (AL=0, CL−1, CL−2) for optimized memory controller timing. It is used in embedded networking, industrial HMIs, and edge AI inference modules requiring low-voltage, high-bandwidth memory with robust thermal reliability.

For engineers reviewing the W631GU6NB11I datasheet, W631GU6NB11I pinout, W631GU6NB11I application, or W631GU6NB11I equivalent, this page provides verified electrical specs, ball mapping, JEDEC-compliant timing parameters, ODT configuration options, and validated alternatives for DDR3L-1866 industrial-grade memory substitution.

Technical Context

This device implements a double-data-rate architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling precise timing closure at 933 MHz clock frequency (1866 MT/s).

It supports full JEDEC DDR3L-1866 compliance including ZQ calibration for output driver and ODT impedance tuning, asynchronous RESET# for power-up initialization, and dynamic ODT (Rtt_WR) with programmable termination values (Rtt_Nom = 60 Ω, Rtt_WR = 40/60/120 Ω). Mode registers MR0–MR3 configure burst length, CAS/CWL, PASR, ASR, and MPR readout for system-level timing calibration.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout conforms to JEDEC MO-275AC standard for DDR3L SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with W631GU6NB11I, IS43TR16128B-125KBL trades calibration features for lower cost, while MT41K128M16HA-125:E offers broader ecosystem support at reduced speed-making W631GU6NB11I optimal for new industrial designs targeting 1866 MT/s with built-in timing calibration.

Availability

W631GU6NB11I is available at Aetrix Electronics and suitable for industrial HMIs, embedded networking equipment, and edge AI inference modules requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W631GU6NB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W631GU6NB11I belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant timing calibration features.

FAQ

What is the maximum data rate supported by W631GU6NB11I?

W631GU6NB11I supports up to 1866 MT/s (DDR3L-1866) with CL=13, corresponding to a 933 MHz differential clock frequency. This speed grade is validated across the full industrial temperature range (–40°C to +95°C) and requires compliant controller timing settings including tAA = 13.91 ns, tRCD = 13.91 ns, and tRP = 13.91 ns.

Does W631GU6NB11I support backward compatibility with standard 1.5 V DDR3 systems?

Yes, W631GU6NB11I supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L) and is fully backward compatible with 1.5 V ±0.075 V DDR3 systems. The device automatically adapts to VDD/VDDQ levels within 1.283 V–1.45 V (DDR3L) or 1.425 V–1.575 V (DDR3), with no hardware modification required.

How does the Multi-Purpose Register (MPR) function in W631GU6NB11I?

The MPR in W631GU6NB11I outputs a predefined 128-bit calibration pattern upon MRS command (MR3 A2=1), enabling system-level DQS-to-DQ timing verification. This allows memory controllers to measure and correct DQS skew relative to DQ launch timing-critical for achieving stable 1866 MT/s operation across PCB trace mismatches.

What ODT configurations are supported by W631GU6NB11I?

W631GU6NB11I supports both synchronous and dynamic ODT modes. Rtt_Nom values include 60 Ω (default), 120 Ω, and 30 Ω; Rtt_WR values are 40 Ω, 60 Ω, and 120 Ω. Dynamic ODT activates termination only during WRITE bursts, reducing power and noise compared to always-on configurations.

Is write leveling supported on W631GU6NB11I, and how is it implemented?

Yes, W631GU6NB11I fully supports JEDEC-compliant write leveling. When enabled via MR1, the DRAM returns a fixed pattern on DQ during WRITE commands, allowing the controller to adjust DQS delay until alignment is achieved. This process compensates for flight-time skew between DQS and DQ signals across all 16 data lines.