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Winbond Electronics Corporation W631GU6NB-11 TR
- Part No.:
- W631GU6NB-11 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6NB-11 TR.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,251
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Product details
Overview
W631GU6NB-11 TR from Winbond is a 1Gbit (8M × 8 banks × 16-bit) DDR3L SDRAM operating at 1866 MT/s with CL=13, tRCD/tRP=13.91 ns, and 1.35V nominal supply. It supports industrial temperature range (0°C to 95°C), on-die termination (ODT), ZQ calibration, and programmable CAS Write Latency (CWL=7), targeting memory subsystems in networking routers and industrial HMIs.
For engineers reviewing the W631GU6NB-11 TR datasheet, W631GU6NB-11 TR pinout, W631GU6NB-11 TR application, or W631GU6NB-11 TR equivalent, this device requires attention to DDR3L-1866 timing compliance, VFBGA-96 ball mapping, differential clock (CK/CK#) interface constraints, and ODT configuration for signal integrity in high-speed PCB layouts.
Technical Context
This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, DLL-aligned DQ/DQS timing, and synchronous command decoding on CK rising edge. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.
Key operational modes include Precharged Power Down, Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self Refresh (PASR). The device uses asynchronous RESET# for initialization and supports write leveling and Multi-Purpose Register (MPR) readout for system-level timing calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (8,388,608 words × 8 banks × 16 bits) |
| Data Rate | 1866 MT/s (DDR3L-1866, CL=13, tRCD/tRP=13.91 ns) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ±0.075 V |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (commercial/industrial grade) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
| CAS Latency (CL) | Programmable CL = 5–14; CL=13 supported at DDR3L-1866 speed bin |
| CAS Write Latency (CWL) | Programmable CWL = 5–9; CWL=7 required for DDR3L-1866 operation |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) with ASR or Manual Self-Refresh enabled |
Pinout & Package
VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness, window-type BGA) with 0.8 mm ball pitch. Ball layout follows JEDEC MO-274 standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs; A10 used for auto-precharge control |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent access |
| CK / CK# | Differential Clock | Edge-triggered command latch point; all commands sampled at CK rising/CK# falling crossing |
| CS# | Chip Select | Active-low enables command decoding; high disables all operations |
| RAS#, CAS#, WE# | Command Control | Standard DDR3 command pins defining ACT, READ, WRITE, PRE, REF, etc. |
| RESET# | Asynchronous Reset | Hardware-initiated power-up initialization and functional reset; must be held low ≥200 ns |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; source-synchronous with DQS/DQS# |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe; center-aligned with write data, edge-aligned with read data |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ[7:0] and DQ[15:8]; active-high masks corresponding byte |
| ODT | On-Die Termination Enable | Dynamic control of termination resistance on DQ/DQS/DM lines during reads/writes |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1% resistor to ground for output driver and ODT calibration |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL=7 fixed for DDR3L-1866 operation, enabling precise write timing alignment with clock frequency |
| Dynamic On-Die Termination (ODT) | Configurable Rtt_WR impedance during writes improves signal integrity without external resistors |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor ensures consistent output drive strength and ODT accuracy across voltage/temperature |
| Write Leveling Support | Enables per-lane DQS-to-CK skew compensation in high-speed systems, critical for reliable DDR3L-1866 timing closure |
| Multi-Purpose Register (MPR) | Provides predefined calibration bit pattern for system-level timing margin verification without disturbing memory contents |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, lowering IDD6 in partial-workload embedded applications |
Applications
| Networking Router Memory | Industrial HMI Frame Buffer |
|---|---|
Use Scenario: High-throughput packet buffering and table lookups in Layer 3 routing ASICs requiring sustained 1866 MT/s bandwidth. IC Role / Device Role / Timing Role: Primary system memory interfaced directly to network processor's DDR3L controller with strict tRCD/tRP timing enforcement. Use Value: CL=13 and tRCD/tRP=13.91 ns meet DDR3L-1866 timing budget while 1.35 V operation reduces thermal load in fanless router chassis. |
Use Scenario: Graphics frame buffer and application code storage in ruggedized human-machine interface panels deployed in factory automation. IC Role / Device Role / Timing Role: Dual-role memory serving as display refresh buffer and real-time OS runtime memory with deterministic latency. Use Value: 0°C–95°C industrial temperature rating and PASR mode enable low-power idle states without compromising reliability in uncontrolled ambient environments. |
| Medical Imaging Data Cache | Automated Test Equipment (ATE) Buffer |
Use Scenario: Temporary storage of reconstructed CT/MRI slices prior to GPU rendering or DICOM export in portable diagnostic devices. IC Role / Device Role / Timing Role: High-bandwidth, low-latency scratchpad memory supporting burst-intensive image processing pipelines. Use Value: BL8 and interleaved burst ordering maximize sequential throughput; ZQ calibration maintains signal fidelity across varying board temperatures during long acquisition cycles. |
Use Scenario: Pattern memory and result capture buffer in high-speed digital ATE platforms performing multi-GHz logic testing. IC Role / Device Role / Timing Role: Synchronized data staging memory between test controller and DUT interface, requiring precise write leveling and MPR-based margin validation. Use Value: Write leveling and MPR support enable robust timing margin characterization at 1866 MT/s, reducing test program development time and improving yield analysis accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125K | 1 Gbit DDR3L, 1600 MT/s (CL=11), VFBGA-96, 1.283–1.45 V; no PASR or ASR support | Limited to 85°C max case temperature; lacks extended temp self-refresh modes | Choose when DDR3L-1600 speed suffices and extended temperature self-refresh is not required |
| IS43TR16128B-125KBL | 1 Gbit DDR3L, 1600 MT/s (CL=11), VFBGA-96, 1.283–1.45 V; supports PASR but no ASR | Rated for 0°C–95°C; no 105°C option; CWL limited to 5–8 | Prefer for cost-sensitive industrial designs where DDR3L-1600 bandwidth meets requirements and ASR is unnecessary |
Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, the W631GU6NB-11 TR delivers higher bandwidth (1866 vs. 1600 MT/s), full ASR/PASR support for extended temperature operation, and tighter tRCD/tRP timing-making it optimal for thermally constrained, high-throughput embedded systems requiring guaranteed 95°C functionality.
Availability
W631GU6NB-11 TR is available at Aetrix Electronics and suitable for networking infrastructure, industrial HMI, medical imaging, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for W631GU6NB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU6NB-11 TR belongs to Winbond's DDR3L SDRAM product line, engineered for power-efficient, high-reliability memory subsystems in thermally demanding embedded applications where 1.35 V operation and extended temperature support are critical.
FAQ
What is the maximum data rate supported by the W631GU6NB-11 TR?
The W631GU6NB-11 TR supports up to 1866 MT/s (megatransfers per second) in DDR3L-1866 speed bin, corresponding to a 933 MHz clock frequency with CL=13 and tRCD/tRP=13.91 ns. This rating is validated under 0°C to 95°C case temperature and 1.283–1.45 V supply conditions per JEDEC specification.
Does the W631GU6NB-11 TR support backward compatibility with standard 1.5 V DDR3 systems?
Yes, the W631GU6NB-11 TR is fully backward compatible with 1.5 V DDR3 systems. It operates within VDD/VDDQ = 1.5 V ± 0.075 V and maintains functional and timing compliance with JEDEC DDR3 standards when supplied at 1.5 V, enabling drop-in replacement in legacy 1.5 V designs without hardware modification.
How does the W631GU6NB-11 TR handle thermal management at 95°C case temperature?
At 95°C case temperature, the W631GU6NB-11 TR requires either Auto Self-Refresh (ASR) mode (MR2 A6=1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6=0b, A7=1b) to maintain valid tREFI=3.9 µS. This doubles refresh frequency versus standard 7.8 µS, ensuring data retention integrity without external thermal monitoring circuitry.
What is the purpose of the ZQ pin on the W631GU6NB-11 TR, and what external component is required?
The ZQ pin on the W631GU6NB-11 TR connects to an external 240 Ω ±1% precision resistor to ground, enabling factory and runtime calibration of output driver strength and on-die termination (ODT) impedances. This calibration compensates for process, voltage, and temperature variations, ensuring consistent signal integrity across operating conditions.
Can the W631GU6NB-11 TR operate with CAS Latency settings other than CL=13?
Yes, the W631GU6NB-11 TR supports programmable CAS Latency from CL=5 to CL=14. However, CL=13 is the only setting qualified for DDR3L-1866 operation per its speed bin. Lower CL values (e.g., CL=11) may be used at reduced frequencies (e.g., DDR3L-1600), but require reconfiguration of mode registers and validation against timing margins.
W631GU6NB-11 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6NB-11 TR FAQ
1.How can I place an order for W631GU6NB-11 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6NB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6NB-11 TR reliable?
The price and inventory of W631GU6NB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6NB-11 TR is usually 5 days.
3.What payment methods are accepted for W631GU6NB-11 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6NB-11 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6NB-11 TR?
W631GU6NB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6NB-11 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6NB-11 TR?
For technical support, including W631GU6NB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6NB-11 TR requirements.
6.How does Aetrix verify that W631GU6NB-11 TR is sourced from the original manufacturer or authorized distributors?
All W631GU6NB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6NB-11 TR meets industry standards.
7.What is the process for return or replacement of W631GU6NB-11 TR?
All W631GU6NB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6NB-11 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6NB-11 TR part is unused and in its original packaging.
Return procedure for W631GU6NB-11 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6NB-11 TR Tags
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M24C02-WMN6TP
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