Winbond Electronics Corporation W631GU6NB-12

Overview

W631GU6NB-12 from Winbond is a 1 Gbit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, operating at DDR3L-1600 speed (800 MHz clock, 1600 MT/s data rate) with CL=11, tRCD=tRP=11 ns, and 1.35 V nominal supply. It delivers high-bandwidth memory for embedded computing, industrial HMIs, and network edge devices requiring low-voltage operation and industrial temperature support (0°C to 95°C).

For engineers reviewing the W631GU6NB-12 datasheet, W631GU6NB-12 pinout, W631GU6NB-12 application, or W631GU6NB-12 equivalent, key selection factors include its DDR3L-1600 timing bin (11-11-11), VFBGA-96 package compatibility, on-die termination (ODT) programmability, ZQ calibration support, and dual-mode refresh (ASR/PASR) for thermal-aware power management.

Technical Context

This device implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ–DQS timing across process/voltage/temperature variations.

It supports programmable CAS Write Latency (CWL = 5–8), additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, and dynamic ODT (Rtt_WR) for write signal integrity. Initialization requires asynchronous RESET# assertion and mode register programming (MR0–MR3) for configuration of burst length, drive strength, ODT values, and self-refresh behavior.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height, ball pitch 0.8 mm), RoHS-compliant, lead-free construction. Ball map defined per JEDEC MO-270DA standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with IS43TR16128B-125KBL and MT41K128M16JT-125K, the W631GU6NB-12 provides higher bandwidth (1600 MT/s), tighter 11-11-11 timing, integrated PASR/ASR for thermal-aware power savings, and full dynamic ODT support - making it optimal for new industrial and edge compute designs demanding performance-per-watt efficiency.

Availability

W631GU6NB-12 is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging terminals, and smart energy gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6NB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU6NB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems needing JEDEC-compliant low-voltage memory with extended temperature operation and advanced power management features.

FAQ

What is the maximum data rate supported by the W631GU6NB-12?

The W631GU6NB-12 supports DDR3L-1600 operation, delivering a maximum data rate of 1600 MT/s with an 800 MHz clock frequency. Its timing bin is specified as CL-tRCD-tRP = 11-11-11 ns, validated across 0°C to 95°C case temperature. This performance level is confirmed in Section 4 (KEY PARAMETERS) and Section 10.15.2 of the official datasheet.

Does the W631GU6NB-12 support both 1.35 V and 1.5 V operation?

Yes, the W631GU6NB-12 is fully backward-compatible with standard DDR3 1.5 V operation while optimized for DDR3L 1.35 V. It accepts VDD/VDDQ from 1.283 V to 1.45 V (typical 1.35 V) and also supports 1.5 V ±75 mV per JEDEC JESD79-3F. Voltage switching must follow the sequencing and timing requirements in Section 11.4 of the datasheet.

How does the W631GU6NB-12 handle refresh at elevated temperatures?

At case temperatures above 85°C, the W631GU6NB-12 requires doubled refresh frequency (tREFI = 3.9 µS instead of 7.8 µS). This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 bit A6=1, or by entering Manual Self-Refresh mode with MR2 A6=0 and A7=1. Both methods are documented in Sections 8.3.3.3 and 11.4 of the datasheet.

What package type and ball count does the W631GU6NB-12 use?

The W631GU6NB-12 uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm thickness and 0.8 mm ball pitch. It conforms to JEDEC MO-270DA and is lead-free/RoHS-compliant. Ball configuration and signal mapping are detailed in Sections 5 and 6 of the datasheet.

Can the W631GU6NB-12 be used in systems requiring write leveling calibration?

Yes, the W631GU6NB-12 fully supports write leveling per JEDEC DDR3L specification. It uses the DQS strobe and internal delay-locked loop (DLL) to align write timing relative to CK, with dedicated command sequences and MPR patterns defined in Sections 8.9 and 8.10. This capability is essential for reliable 1600 MT/s interface timing closure.