Winbond Electronics Corporation W631GU6NB12I TR

Overview

W631GU6NB12I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3L-1600 (11-11-11) operation at 800 MHz clock frequency with 1.35 V nominal supply. It features programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), on-die termination (ODT), ZQ calibration, and industrial temperature range (–40°C to +95°C). This device serves as main memory in embedded controllers, network processors, and industrial HMIs requiring low-voltage, high-density DRAM with JEDEC-compliant timing.

For engineers reviewing the W631GU6NB12I TR datasheet, W631GU6NB12I TR pinout, W631GU6NB12I TR application, or W631GU6NB12I TR equivalent, key selection criteria include CL/CWL configurability, VDD/VDDQ = 1.283–1.45 V operation, 96-ball VFBGA package compatibility, and support for auto-precharge, partial array self-refresh (PASR), and write leveling - all critical for stable DDR3L interface design in thermally constrained environments.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ-DQS-clock timing, while posted CAS with additive latency (AL = 0, CL−1, CL−2) improves command bus efficiency.

It supports synchronous ODT with programmable RTT values (RZQ/4, RZQ/2, RZQ/1), dynamic ODT (Rtt_WR), and asynchronous reset via active-low RESET#. Mode registers MR0–MR3 configure burst length (BL8/BC4), read ordering, PASR, ASR, MPR access, and ZQ calibration control - enabling system-level signal integrity tuning and thermal-aware refresh management.

Key Specifications

Pinout & Package

W631GU6NB12I TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch and 1.0 mm maximum thickness. The package is lead-free and RoHS compliant, optimized for high-density PCB layouts in space-constrained industrial and networking applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with IS43TR16128B-125KBL and MT41K128M16HA-125:E, W631GU6NB12I TR offers broader CL/CWL configurability, integrated write leveling, and PASR - delivering superior timing margin control and dynamic power scaling in thermally demanding, high-reliability applications where feature parity and JEDEC compliance are critical.

Availability

W631GU6NB12I TR is available at Aetrix Electronics and suitable for industrial HMIs, network processors, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6NB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR/NAND Flash, PSRAM, and DDR SDRAM products for industrial, automotive, and communications markets.

The W631GU6NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for applications demanding extended temperature operation, low-voltage compatibility, and JEDEC-compliant signal integrity features such as write leveling and dynamic ODT.

FAQ

What is the operating temperature range for W631GU6NB12I TR?

W631GU6NB12I TR is rated for industrial temperature operation from –40°C to +95°C case temperature (TCASE). This range is validated per JEDEC JESD22-A104 and supported across all AC/DC specifications, including refresh timing, ODT impedance, and tRCD/tRP parameters. The 'I' suffix explicitly denotes this industrial qualification, distinguishing it from commercial-grade variants.

Does W631GU6NB12I TR support backward compatibility with 1.5 V DDR3 systems?

Yes, W631GU6NB12I TR supports dual-voltage operation: it functions fully at VDD/VDDQ = 1.283–1.45 V for DDR3L mode and is backward compatible with 1.5 V ±0.075 V DDR3 systems. Voltage switching must be coordinated with RESET# assertion and mode register reprogramming; the device retains JEDEC compliance in both modes per section 11 of its datasheet.

How is write leveling implemented in W631GU6NB12I TR?

W631GU6NB12I TR implements hardware-assisted write leveling per JEDEC DDR3L specification. During initialization, the memory controller asserts MRS commands to enter write leveling mode, then adjusts DQS delay until the DRAM echoes back a stable pattern aligned to CK. This calibrates DQS-to-CK skew, ensuring reliable write capture at 800 MHz without manual timing margining.

What package type and ball count does W631GU6NB12I TR use?

W631GU6NB12I TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch and 1.0 mm maximum thickness. It is lead-free and RoHS compliant, matching JEDEC MO-270AC standard. Pinout follows standard DDR3L ball assignment for address, command, data, and power terminals.

Can W631GU6NB12I TR operate with CAS Latency lower than CL=11?

Yes, W631GU6NB12I TR supports configurable CAS Latency from CL=5 through CL=11, programmed via MR0. At DDR3L-1600 speed (800 MHz), CL=11 yields tAA = 13.75 ns minimum; lower CL values (e.g., CL=9) reduce tAA to 13.5 ns but require stricter board-level timing control. All supported CL settings are validated per JEDEC AC timing tables in the datasheet.