Winbond Electronics Corporation W631GU6NB-12 TR

Overview

W631GU6NB-12 TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3L-1600 (11-11-11) operation at 800 MHz clock frequency with 1.35 V nominal supply. It delivers 12.8 GB/s peak bandwidth, features programmable CAS Latency (CL=5–11), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for reliable initialization in embedded and industrial memory subsystems.

For engineers reviewing the W631GU6NB-12 TR datasheet, W631GU6NB-12 TR pinout, W631GU6NB-12 TR application, or W631GU6NB-12 TR equivalent, key selection criteria include DDR3L-1600 timing compliance (tRCD/tRP = 13.75 ns min), VDD/VDDQ = 1.283–1.45 V operation, industrial temperature support (0°C to 95°C), and VFBGA-96 package compatibility with JEDEC-standard DDR3L interface signaling.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its DLL-synchronized DQS/DQ timing supports source-synchronous read/write operations, while posted CAS with programmable additive latency (AL = 0, CL−1, CL−2) optimizes command bus efficiency.

It supports full JEDEC DDR3L features including dynamic ODT (Rtt_WR), write leveling, multi-purpose register (MPR)-based calibration, partial array self-refresh (PASR), and auto self-refresh (ASR). The device accepts differential CK/CK# and DQS/DQS# inputs and uses single-ended address/command signals referenced to CK rising edge.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness, ball pitch 0.8 mm), RoHS-compliant, window-type BGA with standard DDR3L ball map.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, the W631GU6NB-12 TR provides unique value through integrated PASR for dynamic power scaling and MPR-based calibration-features absent in the ISSI part and not exposed identically in Micron's offering-making it optimal for thermally constrained industrial designs requiring fine-grained power control and robust timing closure.

Availability

W631GU6NB-12 TR is available at Aetrix Electronics and suitable for industrial HMI displays, network edge routers, medical imaging acquisition, automotive ADAS preprocessing, and embedded computing systems requiring stable component supply, long-term lifecycle support, and JEDEC-compliant DDR3L-1600 performance.

Supply support for W631GU6NB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU6NB-12 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-optimized, thermally robust embedded systems requiring JEDEC-compliant low-voltage memory with extended feature sets like PASR and write leveling.

FAQ

What is the maximum operating frequency supported by the W631GU6NB-12 TR?

The W631GU6NB-12 TR supports DDR3L-1600 operation with a maximum clock frequency of 800 MHz (tCK = 1.25 ns), delivering 1600 MT/s data transfer rate. This is confirmed by its speed grade suffix "-12", JEDEC-compliant timing parameters (tRCD/tRP = 13.75 ns min), and AC specification tables in the official datasheet revision A01.

Does the W631GU6NB-12 TR support backward compatibility with standard 1.5 V DDR3 systems?

Yes, the W631GU6NB-12 TR supports backward compatibility with 1.5 V DDR3 operation per JEDEC JESD79-3F. Its VDD/VDDQ supply range extends to 1.5 V ± 0.075 V, and all DC/AC characteristics remain valid at that voltage. However, DDR3L-1600 timing (11-11-11) is only guaranteed at 1.35 V; operation at 1.5 V may require derating CL/CWL settings.

What package type and ball count does the W631GU6NB-12 TR use?

The W631GU6NB-12 TR uses a VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height, 0.8 mm ball pitch), also referred to as Window BGA. This is explicitly stated in Section 2 (Features) and Section 12 (Package Specification) of the datasheet, and matches JEDEC MO-270AB standard for DDR3L SDRAMs.

How does the W631GU6NB-12 TR handle temperature-dependent refresh requirements?

The W631GU6NB-12 TR implements temperature-compensated refresh: tREFI = 7.8 µs at 0°C–85°C, reduced to 3.9 µs above 85°C. Above 85°C, the device requires either Auto Self-Refresh (ASR) mode (MR2[7:6] = 1x) or Manual Self-Refresh with extended temperature capability (MR2[7:6] = 01) to maintain data retention - a requirement documented in Section 4 and Section 11 of the datasheet.

Is write leveling supported on the W631GU6NB-12 TR, and how is it implemented?

Yes, write leveling is fully supported on the W631GU6NB-12 TR. It is implemented via dedicated MRS commands (MR1 A8 = 1) that place the DRAM into write leveling mode, allowing the memory controller to adjust DQS-to-CK delay dynamically. The procedure, timing diagrams, and register definitions are detailed in Sections 8.9 and 8.10 of the datasheet, ensuring robust timing closure at DDR3L-1600 speeds.