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Winbond Electronics Corporation W631GU6NB-15
- Part No.:
- W631GU6NB-15
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GU6NB-15.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,874
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Product details
Overview
W631GU6NB-15 from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at DDR3L-1333 speed (9-9-9 CL-tRCD-tRP), with 1.35V nominal supply (1.283–1.45V range), VFBGA-96 package (7.5 × 13 mm), and industrial-grade 0°C to 95°C case temperature support. It delivers reliable memory buffering for embedded controllers, network edge devices, and industrial HMIs requiring low-voltage, JEDEC-compliant DDR3L operation.
For engineers reviewing the W631GU6NB-15 datasheet, W631GU6NB-15 pinout, W631GU6NB-15 application, or W631GU6NB-15 equivalent, this page provides verified timing parameters, ball configuration, ODT and ZQ calibration behavior, CAS Write Latency (CWL=5–7) mapping, and DDR3L-1333-specific AC timing constraints including tAA = 13.5 ns min and tRCD = 13.5 ns min.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, supporting concurrent bank activation and auto-precharge. Its DLL-aligned DQS/DQ timing, posted CAS with programmable additive latency (AL = 0, CL−1, CL−2), and bi-directional differential strobes enable precise source-synchronous data capture at 1333 MT/s.
It features asynchronous RESET# for power-up initialization, on-die termination (ODT) with synchronous/dynamic modes, ZQ calibration using external 240 Ω resistor, and Multi-Purpose Register (MPR) for system-level timing calibration via write leveling and predefined read patterns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8M words × 8 banks × 16 bits), enabling 16 MB of 16-bit-wide memory space per device. |
| Data Rate | DDR3L-1333 (667 MHz clock → 1333 MT/s), requiring tCK(AVG) ≤ 1.5 ns for CL=9/CWL=7 operation. |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V for legacy DDR3 systems. |
| CAS Latency | Configurable CL = 5, 6, 7, 8, 9, or 10; CL=9 required for DDR3L-1333 timing compliance (tAA/tRCD/tRP = 9-9-9). |
| CAS Write Latency | Programmable CWL = 5, 6, or 7; CWL=7 used with CL=9 to achieve WL = AL + CWL = 9 for write timing alignment. |
| Refresh Interval | tREFI = 7.8 µs at 0°C ≤ TCASE ≤ 85°C; doubles to 3.9 µs above 85°C, mandating ASR or Manual Self-Refresh mode activation. |
| Package | VFBGA-96 (7.5 × 13 mm, 1.0 mm height), RoHS-compliant, lead-free, window-type BGA with 0.8 mm ball pitch. |
Pinout & Package
VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch, RoHS-compliant lead-free construction. Ball layout follows JEDEC MO-275AC standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs; A12–A14 also encode bank address in burst mode per JEDEC DDR3L spec. |
| BA0–BA2 | Bank Address Inputs | Select one of eight internal banks; sampled with ACT command to determine target bank. |
| CK / CK# | Differential Clock Inputs | Edge-triggered command/address latching at CK rising / CK# falling crossing point; defines all timing windows. |
| DQ0–DQ15 | Data I/Os | 16-bit bidirectional data bus; synchronized to DQS/DQS#; supports BL8 and BC4 burst modes. |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe: center-aligned with write data, edge-aligned with read data; DLL-aligned to CK. |
| DM0–DM1 | Data Mask Inputs | Per-byte write masking for DQ[7:0] and DQ[15:8]; active-high masks corresponding byte during WRITE. |
| RESET# | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and full device reset independent of clock state. |
| ODT | On-Die Termination Control | Dynamic ODT enable input; selects Rtt_Nom values (60/120/40 Ω) per MR1 settings during WRITE operations. |
| WE#, RAS#, CAS# | Command Control Inputs | Standard DDR3 command pins; decoded with A0–A14/BA0–BA2 on CK rising edge to generate ACT, READ, WRITE, PRE, REF. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 5, 6, or 7 ensures optimal write timing alignment across DDR3L-1333 frequency; enables WL = AL + CWL matching system controller requirements. |
| ZQ Calibration | Uses external 240 Ω ±1% resistor to calibrate output driver strength and ODT impedance, maintaining signal integrity across voltage/temperature variation. |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation during WRITE bursts only, reducing standby power while preserving write signal integrity without affecting read paths. |
| Multi-Purpose Register (MPR) | Provides predefined 128-bit calibration pattern for system-level timing margin verification and write leveling setup without disturbing memory array contents. |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks (via MR2 A1–A3), cutting IDD6 by up to 40% in partial-bank workloads. |
Applications
| Industrial HMI Systems | Network Edge Routers |
|---|---|
|
Use Scenario: Touch-enabled factory-floor operator panels with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A9/A15-based SoCs, buffering frame buffers and application code with DDR3L-1333 bandwidth. Use Value: 1.35V operation reduces thermal load in sealed enclosures; PASR and low IDD6 (≤10 mA) extend uptime during brownouts. |
Use Scenario: Layer 3 packet forwarding engines in compact SD-WAN appliances with dual-core MIPS or ARM processors. IC Role / Device Role / Timing Role: Shared system memory for packet buffering, routing tables, and firmware execution under deterministic latency constraints. Use Value: tRCD = 13.5 ns and tRP = 13.5 ns ensure predictable command-to-data and precharge delays critical for interrupt-driven packet processing. |
| Medical Diagnostic Terminals | Smart Energy Meters |
|
Use Scenario: Portable ultrasound imaging units requiring high-resolution display buffering and DICOM metadata handling. IC Role / Device Role / Timing Role: Dual-channel memory interface component supporting 16-bit wide data path for image frame storage and real-time DSP co-processing. Use Value: VFBGA-96 footprint minimizes PCB area; 0°C to 95°C rating supports operation inside thermally insulated medical chassis. |
Use Scenario: ANSI C12.22-compliant two-way communication modules in AMI smart meters with firmware-over-the-air updates. IC Role / Device Role / Timing Role: Code/data RAM for secure boot, AES-128 decryption, and time-stamped event logging in resource-constrained MCU subsystems. Use Value: Backward compatibility to 1.5V allows reuse of existing DDR3 design assets; RESET# pin enables controlled recovery after power glitches. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-15KBL | Same density (1G-bit), VFBGA-96, DDR3L-1333, CL=9, but rated for -40°C to 105°C (industrial-plus) and requires 240 Ω ZQ resistor with tighter tolerance (±0.5%). | Supports extended temperature operation beyond W631GU6NB-15's 95°C limit; suitable for outdoor metering or automotive infotainment head units. | Select IS43TR16128B-15KBL when ambient temperature exceeds 95°C or when tighter ZQ calibration stability is required. |
| MT41K128M16JT-125K | Higher speed grade (DDR3L-1600, CL=11), same 1G-bit density and VFBGA-96, but operates at 1.2V core (VDDQ=1.35V) and lacks PASR support. | Delivers higher bandwidth (1600 MT/s) but consumes more active current (IDD1 = 105 mA vs. 95 mA) and cannot reduce self-refresh power via bank masking. | Choose MT41K128M16JT-125K only if system clock budget permits 800 MHz and PASR is not needed for power optimization. |
Compared with IS43TR16128B-15KBL and MT41K128M16JT-125K, W631GU6NB-15 offers optimal balance of cost, industrial temperature range, and power-aware features like PASR and dynamic ODT - making it ideal for cost-sensitive, thermally constrained embedded designs where 1333 MT/s suffices.
Availability
W631GU6NB-15 is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical diagnostic terminals, and smart energy meters requiring stable component supply, long-term lifecycle assurance, and JEDEC DDR3L compliance.
Supply support for W631GU6NB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and consumer markets.
W631GU6NB-15 belongs to Winbond's DDR3L SDRAM product line, designed specifically for low-power, high-reliability embedded applications where voltage scalability, thermal robustness, and JEDEC interoperability are essential.
FAQ
What is the maximum operating frequency supported by W631GU6NB-15?
W631GU6NB-15 is rated for DDR3L-1333 operation, corresponding to a maximum clock frequency of 667 MHz (1333 MT/s). Its tCK(AVG) specification supports 1.5 ns minimum clock period for CL=9/CWL=7 configurations, and it does not support higher-speed bins such as DDR3L-1600 or DDR3L-1866.
Does W631GU6NB-15 support both 1.35V and 1.5V VDD/VDDQ operation?
Yes, W631GU6NB-15 is fully backward compatible with standard DDR3 1.5V systems. It operates within 1.283–1.45V for DDR3L mode and accepts 1.5V ± 0.075V for DDR3 mode, with no hardware modification required - voltage selection is determined solely by the host system's power delivery design.
How is the W631GU6NB-15 refresh interval affected by temperature?
At 0°C ≤ TCASE ≤ 85°C, W631GU6NB-15 uses tREFI = 7.8 µS. Above 85°C, the interval halves to 3.9 µS - requiring either Auto Self-Refresh (ASR) enabled via MR2 or Manual Self-Refresh entry to maintain data retention, as standard auto-refresh commands alone are insufficient.
What termination resistances are supported by W631GU6NB-15's on-die termination (ODT)?
W631GU6NB-15 supports programmable ODT values of 60 Ω, 120 Ω, and 40 Ω (Rtt_Nom) via MR1, plus dynamic ODT (Rtt_WR) values of 60 Ω or 120 Ω during WRITE operations. These are calibrated using an external 240 Ω ±1% ZQ reference resistor connected to the ZQ pin.
Can W631GU6NB-15 be used in systems requiring Partial Array Self-Refresh (PASR)?
Yes, W631GU6NB-15 supports PASR via MR2 register bits A1–A3, allowing selective self-refresh of 1/2, 1/4, 1/8, or all 8 banks. This feature reduces self-refresh current (IDD6) proportionally - e.g., refreshing half the array cuts IDD6 from 10 mA to ~5 mA - extending battery life in portable applications.
W631GU6NB-15 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GU6NB-15 FAQ
1.How can I place an order for W631GU6NB-15 through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU6NB-15 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU6NB-15 reliable?
The price and inventory of W631GU6NB-15 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6NB-15 is usually 5 days.
3.What payment methods are accepted for W631GU6NB-15?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6NB-15 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU6NB-15?
W631GU6NB-15 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU6NB-15 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU6NB-15?
For technical support, including W631GU6NB-15 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6NB-15 requirements.
6.How does Aetrix verify that W631GU6NB-15 is sourced from the original manufacturer or authorized distributors?
All W631GU6NB-15 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6NB-15 meets industry standards.
7.What is the process for return or replacement of W631GU6NB-15?
All W631GU6NB-15 units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6NB-15, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU6NB-15 part is unused and in its original packaging.
Return procedure for W631GU6NB-15:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU6NB-15 Tags
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