Winbond Electronics Corporation W631GU6NB-15 TR

Overview

W631GU6NB-15 TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, operating at DDR3L-1333 speed (9-9-9 CL-tRCD-tRP), with 1.35V nominal supply, VFBGA-96 package (7.5 × 13 mm), and industrial-grade temperature support up to 95°C. It serves as main memory in embedded computing, networking infrastructure, and industrial control systems requiring low-voltage, high-density DRAM.

For engineers reviewing the W631GU6NB-15 TR datasheet, W631GU6NB-15 TR pinout, W631GU6NB-15 TR application, or W631GU6NB-15 TR equivalent, key selection considerations include its DDR3L-1333 timing compliance, programmable CAS Write Latency (CWL = 5–7), on-die termination (ODT) support, ZQ calibration capability, and compatibility with JEDEC-standard DDR3L controllers in space-constrained designs.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, supporting burst lengths of 8 (BL8) and burst chop 4 (BC4), plus interleaved or nibble-sequential read ordering. Its DLL-aligned DQS/DQ timing ensures precise source-synchronous data capture at up to 1333 MT/s.

The device features asynchronous RESET# for power-up initialization, programmable mode registers (MR0–MR3) for CAS Latency (CL = 5–10), CWL, ODT RTT values, PASR, ASR, and dynamic ODT (Rtt_WR). It supports ZQ calibration using an external 240 Ω resistor and provides MPR-based system-level timing calibration via write leveling.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 × 13 mm², 1.0 mm thickness) with 96 solder balls arranged in 8 rows × 12 columns (excluding corner blanks), compliant with JEDEC MO-270AB standard. Ball pitch is 0.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with W631GU6NB-15 TR, the Micron part delivers higher bandwidth but lacks ASR and extended-temp refresh, while the ISSI part extends temperature coverage and adds deep power-down-making it suitable for harsh environments where W631GU6NB-15 TR's 95°C limit is insufficient.

Availability

W631GU6NB-15 TR is available at Aetrix Electronics and suitable for industrial HMI panels, network switch buffers, medical imaging gateways, and smart energy meters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6NB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including serial NOR/NAND Flash, RAM, and trusted firmware storage products.

The W631GU6NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant interoperability with mainstream memory controllers.

FAQ

What is the maximum data rate supported by the W631GU6NB-15 TR?

The W631GU6NB-15 TR supports DDR3L-1333 operation, delivering a maximum data rate of 1333 MT/s (667 MHz clock frequency). This is confirmed by its speed grade suffix "-15", JEDEC-compliant 9-9-9 timing (CL-tRCD-tRP), and tCK(AVG) specification of 1.5 ns minimum. The device maintains full AC/DC performance within 0°C to 95°C case temperature.

Does the W631GU6NB-15 TR support both 1.35 V and 1.5 V operation?

Yes, the W631GU6NB-15 TR is backward compatible with 1.5 V DDR3 systems. Its VDD/VDDQ operating range is 1.283 V to 1.45 V for DDR3L mode, and it also supports 1.5 V ± 0.075 V (1.425 V to 1.575 V) per JEDEC JESD79-3F Annex L. Voltage switching between modes requires proper sequencing and mode register reprogramming.

How does the W631GU6NB-15 TR handle temperature-induced refresh requirements?

At case temperatures above 85°C, the W631GU6NB-15 TR requires doubled refresh frequency (tREFI = 3.9 µs instead of 7.8 µs). This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 bit A6 or by manually entering Self-Refresh mode. The -15 suffix guarantees full functionality up to 95°C with this extended refresh behavior.

What termination options are available on the W631GU6NB-15 TR?

The W631GU6NB-15 TR supports programmable on-die termination (ODT) with RTT_NOM values of 60 Ω, 120 Ω, or 240 Ω (MR1), and RTT_WR values of 60 Ω or 120 Ω (MR2). Dynamic ODT (Rtt_WR) allows termination to be enabled only during WRITE operations, improving signal integrity without impacting READ timing margins.

Is write leveling supported on the W631GU6NB-15 TR?

Yes, the W631GU6NB-15 TR fully supports write leveling per JEDEC DDR3L specification. It uses the Multi-Purpose Register (MPR) to output a predefined calibration pattern, allowing the memory controller to adjust DQS timing relative to CK for optimal WRITE setup/hold window alignment-critical for reliable operation at 1333 MT/s.