Winbond Electronics Corporation W631GU8KB12I

Overview

W631GU8KB12I from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35V nominal supply with industrial temperature support (−40°C to +95°C), compliant with DDR3L-1600 (11-11-11) timing, and packaged in 78-ball WBGA (8×10.5 mm²). It delivers 1600 Mb/sec/pin data rates for memory subsystems in embedded controllers, networking edge devices, and industrial HMIs.

For engineers reviewing the W631GU8KB12I datasheet, W631GU8KB12I pinout, W631GU8KB12I application, or W631GU8KB12I equivalent, this page provides verified electrical parameters, ball mapping, JEDEC-compliant timing behavior, ODT configuration options, and industrial-grade thermal validation - all specific to the -12I speed grade and WBGA package.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, supporting concurrent bank activation and auto-precharge. It uses differential CK/CK# inputs for command/address latching and source-synchronous DQS/DQS# strobes aligned to read/write data edges.

The device supports programmable CAS Latency (CL = 6, 7, 8, 9, 10, 11), CAS Write Latency (CWL = 5–8), additive latency (AL = 0, CL−1, CL−2), and dynamic on-die termination (Rtt_WR) with ZQ calibration for output driver and ODT impedance tuning using an external 240 Ω reference resistor.

Key Specifications

Pinout & Package

Packaged in 78-ball WBGA (8 mm × 10.5 mm, 0.8 mm pitch), RoHS-compliant and lead-free. Ball layout follows JEDEC MO-270DA standard with dedicated VDDQ/VSSQ planes for I/O noise isolation and ZQ pin for external calibration resistor connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GU8KB12I uniquely combines industrial temperature qualification, 78-ball WBGA footprint compatibility, and full JEDEC DDR3L-1600 timing compliance without derating - making it optimal for space-constrained, thermally demanding embedded systems where pinout retention and thermal margin are critical.

Availability

W631GU8KB12I is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical diagnostic terminals, and smart energy gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU8KB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU8KB12I belongs to Winbond's DDR3L SDRAM product line, engineered specifically for cost-sensitive, thermally demanding embedded applications requiring JEDEC-compliant low-voltage memory with industrial-grade reliability and extended temperature operation.

FAQ

What is the maximum clock frequency supported by W631GU8KB12I?

W631GU8KB12I supports a maximum clock frequency of 800 MHz, corresponding to DDR3L-1600 operation (1600 Mb/sec/pin). This is validated under industrial temperature conditions (−40°C to +95°C) with t_RCD/t_RP/t_AA = 11 ns minimum and CL = 11. The device achieves this while maintaining full JEDEC AC/DC specifications, including ZQ calibration stability and ODT impedance accuracy across the full temperature range.

Does W631GU8KB12I support both DDR3 and DDR3L voltage modes?

Yes, W631GU8KB12I supports dual-voltage operation: 1.35 V nominal (DDR3L mode) with V_DD/V_DDQ = 1.283–1.45 V, and backward-compatible 1.5 V DDR3 mode (V_DD/V_DDQ = 1.425–1.575 V). Voltage switching is controlled externally; no internal register setting is required. However, DDR3L-1600 timing (11-11-11) is only guaranteed in 1.35 V mode per JEDEC specification.

How is the ZQ calibration resistor value specified for W631GU8KB12I?

W631GU8KB12I requires a 240 Ω ±1% resistor connected between the ZQ pin and V_SS, as defined in JEDEC JESD209-3. This resistor serves as the reference for both output driver impedance tuning (RTT_PU/RTT_PD) and on-die termination calibration. The device performs ZQ calibration automatically after power-up and can be triggered manually via ZQCL command; calibration results are retained across CKE-based power-down states.

What CAS Latency settings are supported by W631GU8KB12I at DDR3L-1600 speed?

W631GU8KB12I supports CAS Latency (CL) values of 6, 7, 8, 9, 10, and 11 at DDR3L-1600 speed. CL = 11 is the default and fully characterized setting for the -12I speed grade; CL = 7 and CL = 9 are optional down-binned configurations subject to SPD programming of t_AA/t_RCD/t_RP = 13.125 ns minimum. All CL settings are configured via Mode Register MR0.

Can W631GU8KB12I operate in Self-Refresh mode at 95°C case temperature?

Yes, W631GU8KB12I supports Self-Refresh operation up to 95°C case temperature, but requires either Auto Self-Refresh (ASR) mode (MR2 A6 = 1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0b, A7 = 1b) to double the refresh rate (t_REFI = 3.9 µs). Standard Self-Refresh (IDD6 ≤ 14 mA) is only guaranteed up to 85°C; operation at 95°C without ASR or manual extension violates JEDEC timing and may cause data retention failure.