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Winbond Electronics Corporation W631GU8KB12I TR

Part No.:
W631GU8KB12I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-TFBGA
Datasheet:
AetrixW631GU8KB12I TR.pdf
Description:
IC DRAM 1GBIT PARALLEL 78WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,237

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Product details

Overview

W631GU8KB12I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35V nominal supply with industrial temperature range (−40°C to +95°C), supporting DDR3L-1600 speed grade (11-11-11 CL/tRCD/tRP), and delivering 1600 Mb/sec/pin data transfer rate for embedded computing and networking memory subsystems.

For engineers reviewing the W631GU8KB12I TR datasheet, W631GU8KB12I TR pinout, W631GU8KB12I TR application, or W631GU8KB12I TR equivalent, key selection considerations include its industrial-grade thermal compliance, programmable CAS Write Latency (CWL = 5–8), on-die termination (ODT) with dynamic Rtt_WR support, and ZQ calibration for output driver and ODT impedance tuning.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and auto-precharge for burst operations.

The device integrates asynchronous RESET# for power-up initialization, multi-purpose register (MPR) for system timing calibration bit pattern readout, write leveling for per-DQ skew compensation, and dynamic ODT mode with programmable Rtt_WR values during write cycles to maintain signal integrity under varying load conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density1 G-bit (16M words × 8 banks × 8 bits)
Data Rate1600 Mb/sec/pin (DDR3L-1600, fCK = 800 MHz)
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ±75 mV
CAS Latency (CL)Supports CL = 6, 7, 8, 9, 10, 11 (12I grade supports CL = 6, (7), 8, (9), 10, 11)
CAS Write Latency (CWL)Programmable CWL = 5, 6, 7, 8; WL = AL + CWL determines write timing alignment
Operating Temperature−40°C ≤ TCASE ≤ 95°C (industrial grade, 12I suffix)
Refresh IntervaltREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C with ASR or Manual Self-Refresh)
Self-Refresh CurrentIDD6 ≤ 14 mA across full industrial temperature range

Pinout & Package

Packaged in lead-free, RoHS-compliant WBGA-78 (8 mm × 10.5 mm, 0.8 mm pitch), with ball grid layout optimized for DDR3L signal integrity and thermal dissipation in high-density PCB layouts.

Pin/Terminal Circuit Role Design Meaning
CK / CK#Differential clock inputSamples all address/control inputs at rising CK / falling CK# crossing; defines timing reference for all operations
DQS / DQS#Differential data strobeSource-synchronous strobe for read/write data; edge-aligned on reads, center-aligned on writes
RESET#Asynchronous reset inputInitiates power-up sequence or functional reset independent of clock; required for initialization
ODTOn-die termination controlEnables/disables programmable termination resistors on DQ, DM, DQS pins per MR1 configuration
ZQCalibration reference terminalConnects to external 240 Ω ±1% resistor to ground for factory-trimmed output driver and ODT impedance calibration
VREFCA / VREFDQReference voltage inputsVREFCA sets command/address threshold; VREFDQ sets data I/O threshold - both require stable 0.5×VDDQ supply

Key Features

Feature Design Value
Dynamic ODT (Rtt_WR)Configurable termination impedance during write bursts improves signal integrity without requiring external resistors
ZQ CalibrationOne-time or periodic calibration using external 240 Ω resistor ensures ±2% output driver and ODT impedance accuracy over voltage/temperature
Write LevelingPer-DQ delay adjustment via MPR read pattern enables precise DQS-to-DQ timing alignment for reliable high-speed writes
Multi-Purpose Register (MPR)Predefined calibration bit pattern accessible via read command supports automated system-level timing margin validation
Partial Array Self Refresh (PASR)Reduces self-refresh current up to 50% by refreshing only active memory subarrays instead of full bank array
Programmable Additive Latency (AL)AL = 0, CL−1, or CL−2 optimizes command bus efficiency by decoupling command acceptance from CAS latency timing

Applications

Industrial HMI Controllers Network Edge Routers

Use Scenario: Real-time human-machine interface with deterministic response, running Linux-based UI stack and local data logging.

IC Role / Device Role / Timing Role: Main system memory providing low-latency, burst-access storage for OS kernel, application binaries, and frame buffers.

Use Value: Industrial temperature rating (−40°C to +95°C) and 14 mA self-refresh current ensure reliable operation in uncooled enclosures with minimal power budget impact.

Use Scenario: Layer-3 packet forwarding engine handling 1+ Gbps traffic with deep packet inspection and QoS queuing.

IC Role / Device Role / Timing Role: Packet buffer memory interfacing directly to network processor's DDR3L controller with tight tRCD/tRP timing constraints.

Use Value: DDR3L-1600 speed bin (11-11-11) and programmable CWL enable optimal write latency matching to PHY timing margins while maintaining JEDEC compliance.

Medical Imaging Gateways Automated Test Equipment (ATE)

Use Scenario: DICOM image acquisition and preprocessing unit capturing multi-channel ultrasound or MRI sensor streams.

IC Role / Device Role / Timing Role: High-bandwidth frame store buffering raw sensor data before FPGA-based compression and analysis.

Use Value: 8-bank concurrency and 1K-byte page size maximize burst efficiency during sequential sensor data writes, reducing average access latency by >30% vs. 4-bank alternatives.

Use Scenario: High-precision digital pattern generator requiring deterministic memory access for waveform playback and real-time stimulus response.

IC Role / Device Role / Timing Role: Timing-critical instruction and vector memory accessed synchronously with test controller's DDR3L interface.

Use Value: Write leveling and MPR calibration support enable sub-nanosecond DQS-to-DQ skew correction, ensuring <100 ps setup/hold margin at 800 MHz clock frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT41K128M8RH-125:E (Micron)Same density, package (78-ball WBGA), and DDR3L-1600 speed grade; differs in ZQ calibration sequence and MPR pattern definitionRequires modified initialization firmware for ZQ exit timing and MPR read protocolPreferred where Micron's long-term supply assurance and automotive qualification (AEC-Q200) are required
IS43TR16128B-125KBL (ISSI)16-bit bus width (vs. 8-bit), same 1G-bit density and industrial temp; requires PCB redesign due to 96-ball FBGA package and doubled data widthNot drop-in; necessitates memory controller reconfiguration and layout revision for x16 interfaceConsider only when higher bandwidth (>3.2 GB/s) justifies board-level redesign and controller compatibility verification

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GU8KB12I TR offers native 8-bit bus width and simplified ZQ/MPR implementation for cost-sensitive industrial designs, while maintaining identical DDR3L-1600 timing and industrial temperature compliance without requiring controller-level changes.

Availability

W631GU8KB12I TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU8KB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU8KB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for applications demanding extended temperature operation, low-power self-refresh, and JEDEC-compliant interoperability in space-constrained embedded systems.

FAQ

What is the maximum operating frequency supported by W631GU8KB12I TR?

W631GU8KB12I TR supports DDR3L-1600 operation at 800 MHz clock frequency (1600 Mb/sec/pin data rate), with tCK(AVG) ranging from 1.875 ns to <2.5 ns depending on CAS Latency setting. This speed grade is validated across the full industrial temperature range (−40°C to +95°C) and complies with JEDEC standard JESD79-3F for DDR3L SDRAM.

Does W631GU8KB12I TR support backward compatibility with standard 1.5V DDR3 systems?

Yes, W631GU8KB12I TR supports dual-voltage operation: it functions at 1.35V nominal (DDR3L mode) and is fully backward compatible with 1.5V ±75 mV DDR3 systems. The device maintains full AC/DC specifications at both voltages, allowing seamless integration into legacy 1.5V platforms without hardware modification.

How does the ZQ calibration function work on W631GU8KB12I TR?

W631GU8KB12I TR uses the ZQ pin to connect to an external 240 Ω ±1% precision resistor to ground. During ZQ calibration commands, internal circuitry measures this reference to trim output driver strength and on-die termination (ODT) impedances, achieving ±2% accuracy over voltage and temperature variations without requiring manual calibration in system firmware.

What is the purpose of the Multi-Purpose Register (MPR) in W631GU8KB12I TR?

The MPR in W631GU8KB12I TR stores a predefined 128-bit calibration pattern used during system initialization. When read via a dedicated MPR read command, it provides a known bit sequence that enables automatic measurement of DQS-to-DQ timing skew, supporting write leveling and margin validation without requiring custom test patterns or external instrumentation.

Can W631GU8KB12I TR operate in Partial Array Self Refresh (PASR) mode?

Yes, W631GU8KB12I TR supports PASR via Mode Register MR2. By programming PASR bits, users can restrict self-refresh to selected banks or subarrays, reducing IDD6 current by up to 50% compared to full-array refresh. This feature is especially valuable in battery-powered or thermally constrained industrial applications where dynamic power optimization is critical.

W631GU8KB12I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
1Gbit
Memory Organization:
128M x 8
Memory Interface:
Parallel
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-WBGA (10.5x8)

W631GU8KB12I TR FAQ

1.How can I place an order for W631GU8KB12I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GU8KB12I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GU8KB12I TR reliable?

The price and inventory of W631GU8KB12I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8KB12I TR is usually 5 days.

3.What payment methods are accepted for W631GU8KB12I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8KB12I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GU8KB12I TR?

W631GU8KB12I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GU8KB12I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GU8KB12I TR?

For technical support, including W631GU8KB12I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8KB12I TR requirements.

6.How does Aetrix verify that W631GU8KB12I TR is sourced from the original manufacturer or authorized distributors?

All W631GU8KB12I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8KB12I TR meets industry standards.

7.What is the process for return or replacement of W631GU8KB12I TR?

All W631GU8KB12I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8KB12I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GU8KB12I TR part is unused and in its original packaging.

Return procedure for W631GU8KB12I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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