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Winbond Electronics Corporation W631GU8KB-12 TR
- Part No.:
- W631GU8KB-12 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-TFBGA
- Datasheet:
-
W631GU8KB-12 TR.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 78WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,096
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Product details
Overview
W631GU8KB-12 TR from Winbond Electronics is a 1 Gb (128 MB) DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) speed grade, CAS Latency 6–11, and 78-ball WBGA package. It delivers 1600 Mb/s/pin data rates for memory subsystems in embedded computing, industrial HMIs, and networking edge devices.
For engineers reviewing the W631GU8KB-12 TR datasheet, W631GU8KB-12 TR pinout, W631GU8KB-12 TR application, or W631GU8KB-12 TR equivalent, key selection criteria include its 1.35 V low-voltage operation, programmable CWL/CAS latency, ZQ calibration support, on-die termination (ODT), and industrial temperature capability up to 95°C case temperature.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the crossing point, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ-DQS timing relative to CK.
It supports full JEDEC DDR3L command set including ACTIVE, READ/WRITE, PRECHARGE, REFRESH, and SELF-REFRESH, with programmable mode registers (MR0–MR3) controlling CAS latency, additive latency, CWL, ODT settings, PASR, ASR, and MPR readout. Write leveling and ZQ calibration are integral to system-level timing calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB), organized as 16M words × 8 banks × 8 bits - defines total addressable capacity and bank parallelism. |
| Interface Standard | JEDEC-compliant DDR3L - ensures interoperability with DDR3L controllers and backward compatibility with 1.5 V DDR3 systems. |
| Speed Grade | DDR3L-1600 (11-11-11) - guarantees tRCD/tRP/tAA ≤ 13.75 ns at 800 MHz clock frequency (1600 MT/s). |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (typ. 1.35 V) - enables lower power vs. standard DDR3 while maintaining signal integrity. |
| CAS Latency | Programmable CL = 6, 7, 8, 9, 10, 11 - allows tuning of read latency to match controller timing margins. |
| CAS Write Latency | Programmable CWL = 5, 6, 7, 8 - sets write-to-strobe delay; WL = AL + CWL determines effective write timing budget. |
| Package | 78-ball WBGA (8 mm × 10.5 mm, 0.8 mm pitch) - compact footprint suitable for space-constrained PCB layouts. |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C - validated for extended industrial environments without derating. |
Pinout & Package
W631GU8KB-12 TR uses a 78-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch, RoHS-compliant and lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock inputs | Sample all address/control on rising CK/falling CK# crossing; define system timing reference. |
| DQS / DQS# | Differential data strobes | Source-synchronous capture: edge-aligned with read data, center-aligned with write data. |
| RESET# | Asynchronous reset input | Initiates power-up sequence and resets internal state machines independently of clock. |
| ODT | On-die termination control | Enables/disables programmable termination resistors on DQ/DM/DQS pins during reads/writes. |
| ZQ | ZQ calibration reference | Connects to external 240 Ω ±1 % resistor to ground for output driver and ODT impedance calibration. |
| VREFCA / VREFDQ | Reference voltage inputs | VREFCA sets command/address threshold; VREFDQ sets data I/O threshold (0.5 × VDDQ). |
| BA[2:0], A[13:0] | Bank and row/column address | BA selects one of eight banks; A[13:0] provides row/column addressing within active bank. |
| DM | Data mask input | Masks individual byte lanes during WRITE operations to prevent unintended data overwrites. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL per frequency | Supports CWL = 5–8 at DDR3L-1600, enabling precise write timing alignment across voltage/temperature corners. |
| ZQ calibration | Uses external 240 Ω resistor to calibrate output driver strength and ODT impedance, ensuring consistent signal integrity across process/voltage/temperature. |
| Dynamic ODT (Rtt_WR) | Allows on-the-fly ODT activation during WRITE bursts only, reducing stub reflections and improving write eye margin without affecting read paths. |
| Multi-Purpose Register (MPR) | Provides predefined bit pattern for system-level timing calibration, used with write leveling to align DQS-to-CK skew at the DRAM interface. |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks, extending battery life in portable or low-power standby modes. |
| Posted CAS with AL | AL = 0, CL−1, or CL−2 decouples command bus occupancy from CAS latency, increasing command bus efficiency in burst-heavy workloads. |
Applications
| Industrial HMI Memory Subsystem | Edge Network Router Buffer |
|---|---|
Use Scenario: Touch-enabled human-machine interface with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A series SoC via DDR3L controller. Use Value: 1.35 V operation reduces thermal load in sealed enclosures; 95°C case rating ensures reliability in unventilated cabinets. | Use Scenario: Packet buffering and forwarding in fanless enterprise edge routers deployed in telecom closets. IC Role / Device Role / Timing Role: High-bandwidth buffer for packet reassembly and QoS queue management. Use Value: DDR3L-1600 speed and dynamic ODT maintain signal integrity across multi-drop DDR buses under variable traffic loads. |
| Medical Diagnostic Imaging Cache | Automated Test Equipment (ATE) Pattern Memory |
Use Scenario: Real-time image preprocessing pipeline in portable ultrasound units requiring deterministic latency. IC Role / Device Role / Timing Role: Low-latency frame cache between FPGA image processor and display controller. Use Value: Programmable CL/CWL and write leveling enable tight setup/hold margin control critical for sub-10 ns timing closure. | Use Scenario: High-speed digital pattern storage for semiconductor wafer testing with nanosecond-level timing precision. IC Role / Device Role / Timing Role: Burst-access memory storing test vectors and expected responses for parallel pin electronics. Use Value: 78-ball WBGA package supports fine-pitch routing; ZQ calibration maintains impedance stability across 100+ MHz clock sweeps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E | 1 Gb DDR3L, 78-ball FBGA, same speed grade but Micron's 125-ball layout differs; requires PCB redesign. | Validated for automotive AEC-Q200; not rated for 95°C case temperature. | Select if automotive qualification required and layout revision is feasible. |
| IS43TR16128B-125KBL | 2 Gb density, 96-ball FBGA, DDR3L-1600, higher power consumption (IDD0 = 135 mA vs. 105 mA). | Targeted at high-throughput servers; lacks PASR and extended temperature support. | Choose only if additional memory capacity justifies larger footprint and higher thermal load. |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GU8KB-12 TR offers optimal balance of industrial temperature range, low IDD0/IDD6 current, compact WBGA footprint, and integrated ZQ/MPR calibration - making it preferred for thermally constrained embedded designs where layout change is impractical.
Availability
W631GU8KB-12 TR is available at Aetrix Electronics and suitable for industrial HMIs, edge network buffers, medical imaging caches, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GU8KB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU8KB-12 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded applications requiring JEDEC compliance, low-voltage operation, and robust signal integrity features like ZQ calibration and dynamic ODT.
FAQ
What is the maximum operating frequency supported by W631GU8KB-12 TR?
W631GU8KB-12 TR supports a maximum clock frequency of 800 MHz (1600 MT/s), corresponding to the DDR3L-1600 speed bin. This is validated under JEDEC conditions with tRCD/tRP/tAA ≤ 13.75 ns and CL = 11. The device achieves this performance at VDD/VDDQ = 1.35 V nominal and 0°C ≤ TCASE ≤ 95°C.
Does W631GU8KB-12 TR support both DDR3L and standard DDR3 voltage levels?
Yes, W631GU8KB-12 TR is backward compatible with 1.5 V DDR3 operation (VDD/VDDQ = 1.5 V ± 0.075 V) while fully compliant with DDR3L specifications at 1.35 V. This dual-voltage support allows seamless migration from legacy DDR3 designs without hardware changes, provided timing parameters are adjusted per JEDEC spec.
How does the ZQ calibration function work on W631GU8KB-12 TR?
ZQ calibration on W631GU8KB-12 TR uses an external 240 Ω ±1 % resistor connected to the ZQ pin to calibrate internal output driver strength and on-die termination (ODT) impedances. Calibration occurs during power-up, after reset, and can be triggered manually via ZQCL command to maintain accuracy across voltage and temperature drift.
What is the purpose of the Multi-Purpose Register (MPR) in W631GU8KB-12 TR?
The MPR in W631GU8KB-12 TR stores a fixed 128-bit pattern used during system initialization to perform timing calibration. When activated, the DRAM outputs this pattern on DQ pins synchronized to DQS, enabling the memory controller to measure and compensate for DQS-to-CK skew - a critical step in write leveling procedures.
Can W631GU8KB-12 TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, W631GU8KB-12 TR supports PASR via MR2 programming to reduce self-refresh current by refreshing only selected banks. This feature lowers IDD6 from 14 mA (full-array) to proportionally less depending on bank count enabled, extending battery life in portable or low-power standby applications without sacrificing data retention.
W631GU8KB-12 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-WBGA (10.5x8)
W631GU8KB-12 TR FAQ
1.How can I place an order for W631GU8KB-12 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8KB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8KB-12 TR reliable?
The price and inventory of W631GU8KB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8KB-12 TR is usually 5 days.
3.What payment methods are accepted for W631GU8KB-12 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8KB-12 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8KB-12 TR?
W631GU8KB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8KB-12 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8KB-12 TR?
For technical support, including W631GU8KB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8KB-12 TR requirements.
6.How does Aetrix verify that W631GU8KB-12 TR is sourced from the original manufacturer or authorized distributors?
All W631GU8KB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8KB-12 TR meets industry standards.
7.What is the process for return or replacement of W631GU8KB-12 TR?
All W631GU8KB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8KB-12 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8KB-12 TR part is unused and in its original packaging.
Return procedure for W631GU8KB-12 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8KB-12 TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24C08C-STUM-T
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