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Winbond Electronics Corporation W631GU8KB15I TR

Part No.:
W631GU8KB15I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-TFBGA
Datasheet:
AetrixW631GU8KB15I TR.pdf
Description:
IC DRAM 1GBIT PAR 78WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,900

Please send an inquiry. Send us your inquiry, and we will respond immediately.

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Product details

Overview

W631GU8KB15I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-1333 speed grade (9-9-9 timing), and featuring on-die termination, ZQ calibration, and asynchronous RESET# for reliable memory subsystems in embedded controllers and networking equipment.

For engineers reviewing the W631GU8KB15I TR datasheet, W631GU8KB15I TR pinout, W631GU8KB15I TR application, or W631GU8KB15I TR equivalent, key selection considerations include its industrial-grade thermal rating, DDR3L-1333 timing compliance, 78-ball WBGA package, and support for dynamic ODT, write leveling, and partial array self-refresh-critical for power-constrained, thermally demanding designs.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# and DQS/DQS# signaling for source-synchronous data transfer, and DLL-based alignment of DQ and DQS edges to clock. It supports programmable CAS latency (CL = 6, 7, 8, 9, 10), CAS write latency (CWL = 5–7), and additive latency (AL = 0, CL−1, CL−2) to optimize command bus efficiency.

Functional operation includes posted CAS, auto-precharge, burst lengths of 8 (BL8) or burst chop 4 (BC4), multi-purpose register (MPR) for system-level timing calibration, and dual-mode ODT (synchronous and dynamic) with RTT_NOM and RTT_WR impedance control. Refresh modes cover standard, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR) with temperature-aware tREFI scaling.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density1 G-bit (16M × 8 banks × 8 bits), delivering 128 MB total capacity for compact memory subsystems
Speed GradeDDR3L-1333 (9-9-9), enabling 667 MHz clock frequency with tAA ≤ 13.5 ns for predictable read latency
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V, compatible with low-power DDR3L systems and backward-compatible with 1.5 V DDR3
Operating Temperature–40°C ≤ TCASE ≤ 95°C, validated for industrial environments without derating
Burst LengthBL8 fixed or BC4 selectable on-the-fly, supporting both full-line cache fills and partial writes
Refresh IntervaltREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C), requiring ASR or manual self-refresh mode above 85°C
Package78-ball WBGA (8 mm × 10.5 mm), RoHS-compliant, lead-free, with 0.8 mm ball pitch
Power ConsumptionIDD6 ≤ 14 mA in self-refresh, IDD4R ≤ 215 mA during burst reads-enabling thermal management in fanless designs

Pinout & Package

W631GU8KB15I TR uses a 78-ball WBGA package (8 mm × 10.5 mm, 0.8 mm pitch) with RoHS-compliant lead-free construction. Ball layout follows JEDEC-standard DDR3L pinout with dedicated VREFCA/VREFDQ references, ZQ calibration terminal, and separate VDDQ/VSSQ planes for I/O noise isolation.

Pin/Terminal Circuit Role Design Meaning
CK / CK#Differential clock inputSamples all address/control inputs at crossing point; defines timing reference for all operations
DQS / DQS#Differential data strobeSource-synchronous edge-aligned with read data, center-aligned with write data for timing margin
RESET#Asynchronous reset inputInitiates power-up sequence and resets internal state without clock dependency
ZQCalibration reference terminalConnects to external 240 Ω ±1% resistor to ground for output driver and ODT impedance tuning
ODTOn-die termination controlEnables/disables synchronous or dynamic ODT per MR1/MR2 settings for signal integrity optimization
VREFCA / VREFDQReference voltage inputsProvide stable mid-supply references for command/address and data input receivers

Key Features

Feature Design Value
Dynamic ODT (Rtt_WR)Configurable termination during write bursts only, reducing stub reflections and improving write eye margins
Write LevelingPer-pin DQS-to-CK delay calibration via MPR read pattern, enabling robust timing closure across wide temperature ranges
Partial Array Self-Refresh (PASR)Selectively refreshes ¼, ½, or full array to cut self-refresh current by up to 50% in memory-partitioned systems
ZQ CalibrationOne-time or periodic calibration using external 240 Ω resistor, maintaining ±2.5% output driver and ODT impedance accuracy over voltage/temperature
Multi-Purpose Register (MPR)Predefined 128-bit pattern for system-level timing validation, eliminating need for external test patterns during bring-up
Industrial Temp SupportFull AC/DC specification compliance at –40°C to +95°C, including extended tREFI = 3.9 µS and ASR activation

Applications

Industrial PLC Controllers Network Edge Routers

Use Scenario: Real-time deterministic execution of ladder logic and fieldbus protocol stacks under ambient temperatures up to 95°C.

IC Role / Device Role / Timing Role: Primary program/data memory with guaranteed timing stability across industrial thermal cycles.

Use Value: PASR and ASR reduce self-refresh power by 40–50%, extending thermal headroom in sealed enclosures without active cooling.

Use Scenario: Packet buffering and forwarding table storage in Layer 3 switches deployed in uncontrolled telecom cabinets.

IC Role / Device Role / Timing Role: High-reliability DDR3L buffer supporting 10/25 GbE MAC interfaces with strict jitter and skew requirements.

Use Value: Write leveling and dynamic ODT ensure >800 mV write eye height at 667 MHz, meeting IEEE 802.3bj margin targets.

Medical Imaging Gateways Automotive ADAS Domain Controllers

Use Scenario: DICOM image caching and DICOM-RT streaming in portable ultrasound and MRI gateways with battery backup.

IC Role / Device Role / Timing Role: Low-voltage (1.35 V) memory subsystem minimizing standby current while retaining full bandwidth.

Use Value: IDD6 ≤ 14 mA in self-refresh extends battery runtime during idle periods without compromising wake-up latency.

Use Scenario: Sensor fusion memory for camera/radar preprocessing in ISO 26262-compliant ADAS ECUs operating in engine bay environments.

IC Role / Device Role / Timing Role: Safety-critical working memory with RESET#-initiated initialization and ASR-enforced refresh integrity.

Use Value: Asynchronous RESET# ensures deterministic boot state; ASR guarantees refresh compliance even during rapid temperature transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT41K128M8RH-125:E128M × 8, DDR3L-1600 (11-11-11), 96-ball FBGA, VDDQ = 1.283–1.45 V, same industrial temp (–40°C to +95°C)Higher bandwidth (1600 MT/s) but larger package and higher IDD4R (250 mA vs. 215 mA)Select when system requires ≥1280 MB/s sustained bandwidth and board layout accommodates 96-ball footprint
IS43TR16128B-125KBL128M × 16, DDR3L-1600, 96-ball FBGA, 1.5 V backward compatibility only, no PASR or ASR supportLacks PASR/ASR and write leveling; limited to 0°C to +95°C (not fully qualified at –40°C)Choose only for cost-sensitive non-industrial applications where thermal margin exceeds 15°C and refresh management is handled externally

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GU8KB15I TR delivers optimized power efficiency at DDR3L-1333 speeds, integrated thermal-aware refresh (ASR/PASR), and factory-calibrated write leveling-making it preferred for space-constrained, thermally aggressive, and safety-aware embedded systems.

Availability

W631GU8KB15I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging applications requiring stable component supply, long-term lifecycle assurance, and full industrial temperature qualification.

Supply support for W631GU8KB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU8KB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant reliability in harsh environments.

FAQ

What is the maximum operating frequency supported by W631GU8KB15I TR?

W631GU8KB15I TR supports DDR3L-1333 operation with a maximum clock frequency of 667 MHz (tCK = 1.5 ns). Its speed bin is defined as 9-9-9 (CL-tRCD-tRP), and it achieves this performance across the full industrial temperature range of –40°C to +95°C when used with appropriate VDD/VDDQ (1.283–1.45 V) and timing configuration.

Does W631GU8KB15I TR support backward compatibility with standard 1.5 V DDR3 systems?

Yes, W631GU8KB15I TR is fully backward compatible with 1.5 V DDR3 systems. It operates within VDD/VDDQ = 1.5 V ± 0.075 V (1.425–1.575 V) and maintains functional equivalence-including identical command encoding, timing parameters, and pinout-while retaining DDR3L-specific features like lower IDD6 and ASR.

How does the ZQ calibration function work on W631GU8KB15I TR?

W631GU8KB15I TR performs ZQ calibration by measuring an external 240 Ω ±1% resistor connected between the ZQ pin and ground. This one-time or periodic calibration adjusts internal output driver and ODT impedances to maintain ±2.5% accuracy over voltage and temperature variations, ensuring consistent signal integrity in high-speed DDR3L interfaces.

What is the purpose of the Multi-Purpose Register (MPR) in W631GU8KB15I TR?

The MPR in W631GU8KB15I TR provides a predefined 128-bit read-only pattern used for system-level timing calibration. During MPR read mode, the device outputs this fixed sequence instead of user data, enabling precise DQS-to-CK skew measurement and write leveling without requiring external test vectors or memory initialization software.

Can W631GU8KB15I TR operate reliably at +95°C case temperature?

Yes, W631GU8KB15I TR is fully specified for operation at TCASE = +95°C. At this temperature, it requires either Manual Self-Refresh with Extended Temperature Range (MR2[7:6] = 0b10) or Auto Self-Refresh (ASR) enabled (MR2[6] = 1b) to double refresh frequency (tREFI = 3.9 µs), ensuring data retention integrity without derating.

W631GU8KB15I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
1Gbit
Memory Organization:
128M x 8
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-WBGA (10.5x8)

W631GU8KB15I TR FAQ

1.How can I place an order for W631GU8KB15I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GU8KB15I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GU8KB15I TR reliable?

The price and inventory of W631GU8KB15I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8KB15I TR is usually 5 days.

3.What payment methods are accepted for W631GU8KB15I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8KB15I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GU8KB15I TR?

W631GU8KB15I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GU8KB15I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GU8KB15I TR?

For technical support, including W631GU8KB15I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8KB15I TR requirements.

6.How does Aetrix verify that W631GU8KB15I TR is sourced from the original manufacturer or authorized distributors?

All W631GU8KB15I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8KB15I TR meets industry standards.

7.What is the process for return or replacement of W631GU8KB15I TR?

All W631GU8KB15I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8KB15I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GU8KB15I TR part is unused and in its original packaging.

Return procedure for W631GU8KB15I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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