Winbond Electronics Corporation W631GU8MB-09

Overview

W631GU8MB-09 from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-2133 (14-14-14) timing, supporting CAS Latency 14 and CWL 10, and delivering 2133 MT/s data rates for high-bandwidth memory subsystems in industrial computing and embedded controllers.

For engineers reviewing the W631GU8MB-09 datasheet, W631GU8MB-09 pinout, W631GU8MB-09 application, or W631GU8MB-09 equivalent, this device requires attention to its VFBGA-78 package, differential clock/strobe interface, ZQ calibration support, and temperature-rated operation up to 95°C - critical for thermal-aware DDR3L system integration.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and programmable additive latency (AL = 0, CL−1, CL−2) to optimize command bus efficiency. It supports both synchronous and asynchronous ODT modes, dynamic ODT (Rtt_WR), and on-die termination for DQ, DM, and DQS pairs.

The device features full JEDEC-compliant DDR3L functionality including posted CAS#, auto-precharge, burst chop (BC4) and burst length 8 (BL8), write leveling, multi-purpose register (MPR) readout for system calibration, and dual-mode refresh (Auto Self-Refresh and Partial Array Self Refresh) with temperature-aware tREFI scaling.

Key Specifications

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with 78 solder balls arranged in 8×10 array plus 2 dummy balls (B1, H10). Ball pitch is 0.8 mm. Compliant with JEDEC MO-270AB standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GU8MB-09 delivers highest-speed DDR3L-2133 operation in a compact x8 VFBGA-78 package with validated 95°C case temperature support - making it optimal for space-constrained, thermally aggressive industrial and automotive edge compute nodes where bandwidth and thermal resilience are co-prioritized.

Availability

W631GU8MB-09 is available at Aetrix Electronics and suitable for industrial PLC controllers, embedded network routers, medical imaging front-ends, and automotive ADAS domain controllers requiring stable component supply, long-lifecycle assurance, and JEDEC-compliant DDR3L memory performance.

Supply support for W631GU8MB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU8MB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for energy-efficient, thermally robust memory subsystems in industrial automation, networking infrastructure, and safety-critical embedded systems.

FAQ

What is the maximum data rate supported by the W631GU8MB-09?

The W631GU8MB-09 supports DDR3L-2133 operation with a maximum data rate of 2133 MT/s, achieved at a 1066 MHz clock frequency (tCK = 0.938 ns minimum) and CL=14/CWL=10 timing. This is confirmed in the device's speed bin specification table and electrical characteristics section for the -09 grade.

Does the W631GU8MB-09 support backward compatibility with standard 1.5 V DDR3 systems?

Yes, the W631GU8MB-09 supports backward compatibility with 1.5 V DDR3 systems. Its VDD and VDDQ rails accept 1.5 V ±0.075 V per JEDEC JESD79-3F, and all DC/AC parameters remain valid under this condition - verified in Section 11 of the datasheet.

What package type and ball count does the W631GU8MB-09 use?

The W631GU8MB-09 uses a VFBGA-78 package: 8 mm × 10.5 mm body size, 1.0 mm height, 0.8 mm ball pitch, with 78 solder balls arranged in an 8×10 grid plus two dummy balls (B1 and H10), as defined in Section 12 of the datasheet.

How does the W631GU8MB-09 handle temperature-dependent refresh requirements?

The W631GU8MB-09 implements temperature-compensated refresh: tREFI = 7.8 µS at 0–85°C, reduced to 3.9 µS above 85°C (requiring doubled Auto Refresh commands). This behavior is enabled automatically and documented in Table 4 under "Average periodic refresh interval".

Is write leveling supported on the W631GU8MB-09, and how is it implemented?

Yes, write leveling is fully supported on the W631GU8MB-09. It uses the MPR (Multi-Purpose Register) to output a predefined calibration bit pattern while the memory controller adjusts DQS delay; the procedure is detailed in Section 8.9 and requires ZQ calibration prior to execution.