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Winbond Electronics Corporation W631GU8MB-11
- Part No.:
- W631GU8MB-11
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8MB-11.pdf
- Description:
- IC DRAM 1GBIT SSTL 15 78VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W631GU8MB-11 from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1866 speed grade (13-13-13 CL-tRCD-tRP), supporting CAS Latency 5–11 and programmable CWL 5–9. It delivers 1866 MT/s data rates in systems requiring low-voltage memory for industrial computing, network edge devices, and embedded controllers.
For engineers reviewing the W631GU8MB-11 datasheet, W631GU8MB-11 pinout, W631GU8MB-11 application, or W631GU8MB-11 equivalent, this device offers verified DDR3L-1866 timing compliance, ZQ calibration support, dynamic on-die termination (Rtt_WR), write leveling, and MPR-based system-level timing calibration - all critical for high-reliability DDR3L interface design and signal integrity validation.
Technical Context
This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, DLL-aligned DQ/DQS timing, and differential CK/CK# clocking. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.
It features asynchronous RESET# for power-up initialization, programmable mode registers (MR0–MR3) for CAS Latency, CWL, ODT settings, PASR, ASR, and dynamic ODT control. ZQ calibration uses an external 240 Ω ±1 % resistor to calibrate output drivers and ODT impedances across voltage and temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (128 MByte), configured as 16M words × 8 banks × 8 bits |
| Data Rate | 1866 MT/s (DDR3L-1866), tCK = 1.07 ns min (CL13/CWL9) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V; backward compatible to 1.5 V ±0.075 V |
| CAS Latency (CL) | Programmable CL5–CL11; CL13 supported only at DDR3L-2133 speed bin |
| CAS Write Latency (CWL) | Programmable CWL5–CWL9 per frequency; WL = AL + CWL |
| Refresh Interval | tREFI = 7.8 µs (0°C ≤ TCASE ≤ 85°C); 3.9 µs at extended temp (95–105°C) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height), RoHS-compliant, lead-free |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with 78 solder balls arranged in 8×10 array plus 2 dummy balls (A1, H10). Ball pitch is 0.8 mm. Package complies with JEDEC MO-270AB standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | Dummy Ball | No electrical connection; mechanical support only |
| A2 | VDD | Core power supply (1.283–1.45 V) |
| A3 | A0 | Row address bit 0 (latched on rising CK edge) |
| A4 | A1 | Row address bit 1 |
| A5 | A2 | Row address bit 2 |
| A6 | A3 | Row address bit 3 |
| A7 | A4 | Row address bit 4 |
| A8 | A5 | Row address bit 5 |
| B1 | VSS | Digital ground reference |
| B2 | VDDQ | I/O power supply (same range as VDD) |
| B3 | A6 | Row address bit 6 |
| B4 | A7 | Row address bit 7 |
| B5 | A8 | Row address bit 8 |
| B6 | A9 | Row address bit 9 |
| B7 | A10/AP | Address bit 10 / Auto-precharge enable |
| B8 | A11 | Row address bit 11 |
| C1 | VSS | Digital ground |
| C2 | CK | Differential clock input (rising edge latches commands) |
| C3 | CK# | Inverted clock input (falling edge latches commands) |
| C4 | WE# | Write enable command active-low |
| C5 | CAS# | Column address strobe active-low |
| C6 | RAS# | Row address strobe active-low |
| C7 | CS# | Chip select active-low |
| C8 | ODT | On-die termination control (synchronous or dynamic) |
| D1 | VSS | Digital ground |
| D2 | RESET# | Asynchronous reset input (active-low, initiates power-up sequence) |
| D3 | DM0 | Data mask for DQ0–DQ7 (write masking) |
| D4 | DQ0 | Data I/O bit 0 (bidirectional, source-synchronous with DQS) |
| D5 | DQ1 | Data I/O bit 1 |
| D6 | DQ2 | Data I/O bit 2 |
| D7 | DQ3 | Data I/O bit 3 |
| D8 | DQ4 | Data I/O bit 4 |
| E1 | VSS | Digital ground |
| E2 | DQ5 | Data I/O bit 5 |
| E3 | DQ6 | Data I/O bit 6 |
| E4 | DQ7 | Data I/O bit 7 |
| E5 | DQS0 | Differential data strobe for DQ0–DQ7 (edge-aligned on read, center-aligned on write) |
| E6 | DQS0# | Inverted strobe for DQ0–DQ7 |
| E7 | TDQS0 | Terminated DQS0 (used when TDQS mode enabled in MR3) |
| E8 | TDQS0# | Inverted terminated DQS0 |
| F1 | VDD | Core power supply |
| F2 | VDDQ | I/O power supply |
| F3 | BA0 | Bank address bit 0 |
| F4 | BA1 | Bank address bit 1 |
| F5 | BA2 | Bank address bit 2 |
| F6 | NC | No connect (reserved for future use) |
| F7 | NC | No connect |
| F8 | VSS | Digital ground |
| G1 | VSS | Digital ground |
| G2 | VDDQ | I/O power supply |
| G3 | NC | No connect |
| G4 | NC | No connect |
| G5 | NC | No connect |
| G6 | NC | No connect |
| G7 | NC | No connect |
| G8 | VSS | Digital ground |
| H1 | VSS | Digital ground |
| H2 | VDD | Core power supply |
| H3 | NC | No connect |
| H4 | NC | No connect |
| H5 | NC | No connect |
| H6 | NC | No connect |
| H7 | NC | No connect |
| H8 | VSS | Digital ground |
| H9 | VDDQ | I/O power supply |
| H10 | Dummy Ball | No electrical connection |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage operation | 1.35 V nominal supply enables 20–25 % lower active power vs. 1.5 V DDR3 |
| ZQ calibration | Single external 240 Ω resistor calibrates both output driver strength and ODT impedance across voltage/temperature |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation during write bursts only, reducing stub reflections and improving write eye margin |
| Write leveling | Hardware-assisted DQS-to-CK delay adjustment per byte lane, essential for DDR3L timing closure at 1866 MT/s |
| Multi-purpose register (MPR) | Predefined pattern readout supports system-level timing calibration without disturbing DRAM data contents |
| Extended temperature support | Validated for 0°C ≤ TCASE ≤ 95°C; supports manual self-refresh extension to 105°C via MR2 configuration |
Applications
| Industrial PLC Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time deterministic control logic execution with multi-task scheduling and fieldbus protocol buffering. IC Role / Device Role / Timing Role: Main program/data memory for ARM Cortex-M7 or RISC-V SoCs, providing low-latency access to instruction cache and real-time buffers. Use Value: DDR3L-1866 bandwidth meets 100+ Mbps EtherCAT/PROFINET frame buffering needs while staying within 1.35 V thermal envelope of fanless enclosures. |
Use Scenario: Packet buffering and forwarding table storage in Layer 3 switches handling 1–10 Gbps line-rate traffic. IC Role / Device Role / Timing Role: Shared packet buffer memory for ASIC/FPGA-based forwarding engines, synchronized to 1866 MT/s PHY interfaces. Use Value: 13-13-13 timing and dynamic ODT ensure clean write eyes under bursty traffic loads, reducing packet drop due to signal integrity failure. |
| Medical Imaging Front-End | Automotive ADAS Domain Controller |
Use Scenario: Raw sensor data capture and pre-processing pipeline for ultrasound or digital X-ray detectors. IC Role / Device Role / Timing Role: High-throughput frame buffer between ADC interface and FPGA-based image reconstruction engine. Use Value: 8-bit prefetch + BL8 burst delivers sustained 1.5+ GB/s read bandwidth needed for 12-bit, 40 MSPS imaging streams. |
Use Scenario: Sensor fusion memory for camera/radar/LiDAR preprocessing in centralized ADAS ECUs. IC Role / Device Role / Timing Role: Low-power working memory for vision DSPs running CNN inference kernels with strict thermal limits. Use Value: 1.35 V operation reduces junction temperature rise by ~8°C vs. DDR3, enabling longer sustained inference bursts in 105°C ambient environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E | 1 G-bit DDR3L, 125-ball FBGA, DDR3L-1600 (11-11-11), CL11 max, no TDQS support | Lower bandwidth; lacks TDQS and extended temperature variants beyond 85°C | Preferred where PCB layout prioritizes larger ball pitch (0.8 mm → 0.8 mm but 125-ball footprint differs) and cost sensitivity outweighs 1866 MT/s need |
| IS43TR16128B-125KBL | 2 G-bit DDR3L, 96-ball FBGA, DDR3L-1600, CL11 max, supports 105°C but no write leveling or MPR | Higher density but lower speed; missing key calibration features required for 1866 MT/s timing closure | Appropriate for space-constrained designs needing >1 G-bit capacity and extended temp, but not for high-speed interface validation |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GU8MB-11 uniquely combines DDR3L-1866 speed, write leveling, MPR, and 95°C operation in a compact 78-ball VFBGA - making it the only option among the three validated for full JEDEC DDR3L-1866 timing compliance with system-level calibration support.
Availability
W631GU8MB-11 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and guaranteed DDR3L-1866 timing compliance.
Supply support for W631GU8MB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W631GU8MB series is part of Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems requiring JEDEC-compliant low-voltage memory with extended temperature support and advanced calibration features.
FAQ
What is the maximum supported CAS Latency for W631GU8MB-11 at DDR3L-1866 speed?
The W631GU8MB-11 supports CAS Latency settings of 5, 6, 7, 8, 9, 10, and 11 at DDR3L-1866 speed. CL13 and CL14 are reserved for DDR3L-2133 operation only and are not valid for the -11 speed grade. This ensures optimal timing margin while maintaining 1866 MT/s throughput in industrial temperature ranges.
Does W631GU8MB-11 support both synchronous and dynamic ODT modes?
Yes, W631GU8MB-11 supports both synchronous ODT (via ODT pin and MR1) and dynamic ODT (Rtt_WR via MR2). Dynamic ODT activates termination only during write operations, improving signal integrity on bidirectional DQ buses without impacting read performance - a key feature confirmed in the device's MR2 functional description and AC timing tables.
Can W631GU8MB-11 operate at 1.5 V, and what are the implications?
Yes, W631GU8MB-11 is backward compatible with 1.5 V DDR3 operation per Section 11 of its datasheet. However, at 1.5 V, it operates only at DDR3L-1866 timing (13-13-13) and does not gain additional speed headroom; the primary benefit is legacy system compatibility, not performance uplift. Full DDR3L-1866 specification remains valid at 1.5 V.
What is the purpose of the TDQS/TDQS# pins on W631GU8MB-11?
The TDQS/TDQS# pins on W631GU8MB-11 provide terminated differential strobe outputs, activated when TDQS mode is enabled in MR3. They reduce stub reflections on DQS routing, especially in point-to-multipoint topologies, and are explicitly defined in the ball description table and functional description section for improved write timing margin at 1866 MT/s.
How does W631GU8MB-11 handle refresh at extended temperatures (95–105°C)?
At 95–105°C case temperature, W631GU8MB-11 requires tREFI = 3.9 µS (doubled refresh rate). This is achieved either by enabling Auto Self-Refresh (ASR) via MR2[7:6] = 10b or by using Manual Self-Refresh with extended temperature capability (MR2[7:6] = 11b), both documented in Section 8.3.3.3 and validated for the -11J variant.
W631GU8MB-11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- SSTL_15
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W631GU8MB-11 FAQ
1.How can I place an order for W631GU8MB-11 through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8MB-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8MB-11 reliable?
The price and inventory of W631GU8MB-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8MB-11 is usually 5 days.
3.What payment methods are accepted for W631GU8MB-11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8MB-11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8MB-11?
W631GU8MB-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8MB-11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8MB-11?
For technical support, including W631GU8MB-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8MB-11 requirements.
6.How does Aetrix verify that W631GU8MB-11 is sourced from the original manufacturer or authorized distributors?
All W631GU8MB-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8MB-11 meets industry standards.
7.What is the process for return or replacement of W631GU8MB-11?
All W631GU8MB-11 units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8MB-11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8MB-11 part is unused and in its original packaging.
Return procedure for W631GU8MB-11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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