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Winbond Electronics Corporation W631GU8MB11I TR
- Part No.:
- W631GU8MB11I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8MB11I TR.pdf
- Description:
- IC DRAM 1GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,408
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Product details
Overview
W631GU8MB11I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35V nominal supply with industrial temperature support (−40°C to +95°C), compliant with DDR3L-1866 (13-13-13) timing, and delivering 1866 MT/s data rates for memory subsystems in embedded controllers and networking equipment.
For engineers reviewing the W631GU8MB11I TR datasheet, W631GU8MB11I TR pinout, W631GU8MB11I TR application, or W631GU8MB11I TR equivalent, key selection criteria include CAS latency support (CL=5–13), programmable CWL (5–7), ZQ calibration capability, on-die termination (RTT_NOM/RTT_WR), and VFBGA-78 package compatibility with JEDEC-standard DDR3L interface timing.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and dynamic ODT for write signal integrity.
The device integrates asynchronous RESET# for power-up initialization, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-to-DQS skew compensation, and partial array self-refresh (PASR) for selective bank retention during low-power operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16M × 8 banks × 8 bits) |
| Data Rate | 1866 MT/s (DDR3L-1866, 13-13-13 timing) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ± 0.075 V |
| CAS Latency | Programmable CL = 5, 6, 8, 10, 13 (JEDEC-compliant for -11I grade) |
| CAS Write Latency | Programmable CWL = 5, 6, 7 (matches operating frequency bin) |
| Operating Temperature | −40°C ≤ TCASE ≤ 95°C (industrial grade) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type ball layout per JEDEC MO-245. Ball pitch is 0.8 mm; balls are arranged in 9 rows (A–J) × 9 columns (1–9), with corner balls A1 and J9 omitted.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1–A9, B1–B9, C1–C9, D1–D9, E1–E9, F1–F9, G1–G9, H1–H9, J1–J9 (excluding A1, J9) | Address/Command/Data/Strobe/Control I/O | Ball mapping follows JEDEC DDR3L standard: A0–A14, BA0–BA2, RAS#, CAS#, WE#, CS#, CKE, ODT, DM0–DM7, DQ0–DQ63, DQS0–DQS7, DQS#0–DQS#7, CK/CK#, VDD, VSS, VDDQ, VSSQ, ZQ, RESET# |
| ZQ | Calibration reference terminal | Connects to 240 Ω ±1 % external resistor to ground for output driver and ODT impedance calibration |
| RESET# | Asynchronous reset input | Active-low signal initiating power-up initialization sequence and functional reset without requiring stable clocks |
| CK / CK# | Differential clock inputs | Latch all command/address inputs at rising edge of CK and falling edge of CK# (crosspoint sampling) |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic On-Die Termination (ODT) | Configurable RTT_NOM (60/120/∞ Ω) and RTT_WR (40/60/120/∞ Ω) per MR1/MR2, enabling real-time impedance matching during write bursts |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor to maintain 34 Ω output driver and ODT accuracy across voltage/temperature |
| Write Leveling | Hardware-assisted DQ-to-DQS timing alignment via MRS-controlled mode, reducing setup/hold violations in high-speed layouts |
| Multi-Purpose Register (MPR) | Predefined 128-bit calibration pattern readout for system-level timing margin verification without disturbing normal memory operation |
| Partial Array Self-Refresh (PASR) | Selective refresh of 1/2/1/4/1/8 banks only, reducing IDD6 current by up to 50 % in memory-constrained embedded applications |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with burst data buffering between fieldbus interfaces and CPU cores. IC Role / Device Role / Timing Role: Primary working memory supporting dual-bank interleaved reads/writes at 1866 MT/s with AL=1 and CL=13 for predictable tRCD/tRP latency. Use Value: Industrial temperature rating (−40°C to +95°C) and PASR enable reliable operation in uncooled cabinet environments while minimizing self-refresh power. | Use Scenario: High-throughput packet buffering in Layer 2/L3 switching ASICs handling 10 GbE line-rate traffic. IC Role / Device Role / Timing Role: Shared packet buffer with concurrent bank activation and burst-chop writes, leveraging dynamic ODT (RTT_WR = 40 Ω) to suppress write-data reflections. Use Value: ZQ calibration and write leveling ensure signal integrity across 12+ inch PCB traces at 933 MHz clock frequency (DDR3L-1866). |
| Medical Imaging Frame Store | Automotive ADAS Preprocessing Cache |
Use Scenario: Temporary storage of uncompressed DICOM image frames during GPU-accelerated reconstruction pipelines. IC Role / Device Role / Timing Role: Low-latency read-access memory with tAA = 13.91 ns (CL=13) and 1K-byte page size to maximize sequential bandwidth during frame streaming. Use Value: Backward 1.5 V compatibility allows reuse of legacy DDR3 controller designs while benefiting from 1.35 V DDR3L power savings in thermally constrained enclosures. | Use Scenario: Intermediate cache for vision-processing SoCs performing real-time object detection on camera feeds. IC Role / Device Role / Timing Role: Burst-read optimized memory with interleaved burst ordering and auto-precharge to sustain >12 GB/s effective bandwidth under thermal cycling. Use Value: RESET# pin enables safe cold-boot recovery after vehicle ignition cycles, and ASR mode maintains data retention during engine-stop/start events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E (Micron) | Same density, VFBGA-78, DDR3L-1866, but supports CL=11 and CWL=6 only; no PASR or MPR | Lacks partial array self-refresh and multi-purpose register-unsuitable for ultra-low-power medical or automotive use cases requiring fine-grained power control | Select when system uses Micron-optimized controllers and does not require PASR or write-leveling calibration features |
| IS43TR16128B-125KBL (ISSI) | 16-bit bus width (x16), different ball map, same speed bin; supports CL=13 but requires separate VREF pin and lacks ZQ calibration | Requires board-level VREF generation and external termination resistors-increases BOM count and layout complexity versus W631GU8MB11I TR's integrated ODT/ZQ | Choose only if existing design already uses ISSI x16 DDR3L and can accommodate revised routing and termination scheme |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GU8MB11I TR provides unique integration of PASR, MPR, and ZQ calibration in a pin-compatible x8 DDR3L-1866 VFBGA-78 package-enabling lower system power, faster timing validation, and reduced external component count.
Availability
W631GU8MB11I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.
Supply support for W631GU8MB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU8MB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems requiring JEDEC-compliant low-voltage memory with extended temperature reliability and advanced power management features.
FAQ
What is the maximum supported CAS latency for W631GU8MB11I TR?
The W631GU8MB11I TR supports programmable CAS latency values of CL = 5, 6, 8, 10, and 13 per JEDEC DDR3L specification for the -11I speed grade. CL = 13 is validated for tRCD/tRP = 13.91 ns minimum at 933 MHz clock frequency, and CL = 7 or 9 are not supported in this industrial-grade variant.
Does W631GU8MB11I TR require an external reference resistor?
Yes, the W631GU8MB11I TR requires a 240 Ω ±1 % external resistor connected between the ZQ pin and VSS to perform factory and runtime output driver and on-die termination impedance calibration. This resistor must be placed within 5 mm of the ZQ ball with minimal trace inductance to meet JEDEC ZQ tolerance requirements.
Can W631GU8MB11I TR operate at 1.5 V?
Yes, the W631GU8MB11I TR is backward compatible with 1.5 V ± 0.075 V DDR3 supply conditions per Section 11 of its datasheet. However, operation at 1.5 V disables DDR3L-specific features such as extended temperature self-refresh modes and may reduce timing margins compared to 1.35 V operation.
What is the function of the RESET# pin on W631GU8MB11I TR?
The RESET# pin on the W631GU8MB11I TR is an asynchronous, active-low input that initiates the power-up initialization sequence and performs functional reset independent of clock stability. It must be held low for ≥200 ns before being released to allow internal DLL locking and mode register loading during system boot.
How many banks does W631GU8MB11I TR have, and why does it matter?
The W631GU8MB11I TR has eight internal banks, enabling concurrent row activation and interleaved access to hide tRC latency. This architecture allows sustained bandwidth in applications like packet buffering or video frame stores where multiple logical data streams access non-contiguous memory regions simultaneously.
W631GU8MB11I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (10.5x8)
W631GU8MB11I TR FAQ
1.How can I place an order for W631GU8MB11I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8MB11I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8MB11I TR reliable?
The price and inventory of W631GU8MB11I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8MB11I TR is usually 5 days.
3.What payment methods are accepted for W631GU8MB11I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8MB11I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8MB11I TR?
W631GU8MB11I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8MB11I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8MB11I TR?
For technical support, including W631GU8MB11I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8MB11I TR requirements.
6.How does Aetrix verify that W631GU8MB11I TR is sourced from the original manufacturer or authorized distributors?
All W631GU8MB11I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8MB11I TR meets industry standards.
7.What is the process for return or replacement of W631GU8MB11I TR?
All W631GU8MB11I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8MB11I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8MB11I TR part is unused and in its original packaging.
Return procedure for W631GU8MB11I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8MB11I TR Tags
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