Winbond Electronics Corporation W631GU8MB-12

Overview

W631GU8MB-12 from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) timing, supporting CAS Latency 5–11 and programmable CWL 5–8 for embedded computing and industrial control memory subsystems.

For engineers reviewing the W631GU8MB-12 datasheet, W631GU8MB-12 pinout, W631GU8MB-12 application, or W631GU8MB-12 equivalent, key selection criteria include its 78-ball VFBGA package, -40°C to +95°C commercial temperature range, 1.283–1.45 V VDD/VDDQ tolerance, ZQ calibration support, and dynamic ODT for high-signal-integrity DDR3L memory interfaces.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, DLL-aligned DQ/DQS timing, and differential CK/CK# clocking synchronized at the crosspoint. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization in burst-intensive memory controllers.

Functional features include asynchronous RESET#, on-die termination (ODT) with synchronous/dynamic modes, write leveling for system-level timing calibration, multi-purpose register (MPR) readout of calibration patterns, and partial array self-refresh (PASR) for power-optimized operation in constrained thermal environments.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and ball pitch of 0.8 mm. Ball map conforms to JEDEC MO-273 standard for DDR3L SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GU8MB-12 provides native write leveling, tighter tAA/tRCD minima at 11-11-11, and unified PASR/ASR control-making it optimal for thermally constrained, timing-critical embedded systems where calibration and power efficiency are prioritized over raw bandwidth.

Availability

W631GU8MB-12 is available at Aetrix Electronics and suitable for industrial HMI systems, network edge routers, medical diagnostic imaging devices, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU8MB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash storage, and logic ICs, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

The W631GU8MB series belongs to Winbond's DDR3L SDRAM product line, engineered for low-voltage, high-reliability embedded applications demanding JEDEC-compliant timing, extended temperature operation, and advanced power management features.

FAQ

What is the maximum operating frequency supported by the W631GU8MB-12?

The W631GU8MB-12 supports DDR3L-1600 operation at 800 MHz clock frequency (1600 MT/s data rate), with tCK(AVG) ranging from 1.25 ns (CL=11/CWL=8) to 3.3 ns depending on configured latency settings. Its fCKMAX is rated at 800 MHz under specified VDD/VDDQ and temperature conditions, and it does not support DDR3L-1866 or higher speed bins.

Does the W631GU8MB-12 support both DDR3L and standard DDR3 voltage levels?

Yes, the W631GU8MB-12 operates at 1.35 V nominal (1.283–1.45 V range) for DDR3L compliance and is backward compatible with 1.5 V ±0.075 V DDR3 systems. Voltage switching between modes is supported via VDD/VDDQ supply control, but mode register settings must be reinitialized after any voltage transition to maintain timing integrity.

How does the W631GU8MB-12 implement On-Die Termination (ODT)?

The W631GU8MB-12 supports synchronous ODT (via MR1), dynamic ODT (Rtt_WR via MR2), and asynchronous ODT modes. ODT values (RTT_NOM, RTT_WR) are programmable to 120 Ω, 60 Ω, 40 Ω, or 30 Ω using ZQ calibration, and termination is applied selectively to DQ, DQS, and DM lines to minimize stub reflections in point-to-point or fly-by topologies.

What is the purpose of the Multi-Purpose Register (MPR) in the W631GU8MB-12?

The MPR in the W631GU8MB-12 outputs a fixed 128-bit calibration pattern (0x0000_0000_0000_0000) upon MRS entry, enabling system-level timing margin verification without accessing actual memory contents. This feature is used during write leveling and eye-diagram analysis to validate DQS-to-DQ alignment and signal integrity before full memory initialization.

Can the W631GU8MB-12 operate reliably at 95°C case temperature?

Yes, the W631GU8MB-12 is rated for 0°C ≤ TCASE ≤ 95°C and fully complies with JEDEC JESD209-2B AC/DC specifications across this range. At temperatures above 85°C, tREFI must be halved to 3.9 µs using Auto Self-Refresh (ASR) enabled via MR2 bit A6=1, ensuring reliable refresh without external intervention.