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Winbond Electronics Corporation W631GU8MB12I
- Part No.:
- W631GU8MB12I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8MB12I.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,286
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Product details
Overview
W631GU8MB12I from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35V nominal supply with industrial temperature range (–40°C to +95°C), compliant with DDR3L-1600 (11-11-11) timing, and packaged in 78-ball VFBGA (8 mm × 10.5 mm). It delivers high-bandwidth memory for embedded controllers, networking processors, and industrial SoC platforms requiring low-voltage, high-reliability DRAM.
For engineers reviewing the W631GU8MB12I datasheet, W631GU8MB12I pinout, W631GU8MB12I application, or W631GU8MB12I equivalent, this device supports programmable CAS latency (CL = 5–11), dynamic on-die termination (Rtt_WR), ZQ calibration, write leveling, and multi-purpose register (MPR)-based system timing calibration - all critical for DDR3L interface validation and signal integrity tuning in dense PCB layouts.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing for precise source-synchronous data capture, and asynchronous RESET# for deterministic power-up initialization. Its command interface uses differential CK/CK# inputs latched at the crossing point, while data I/Os reference differential DQS/DQS# edges.
It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst lengths of 8 (BL8) or 4 (BC4), and programmable CWL (5–8) matched to operating frequency. Refresh modes include standard, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR) - essential for thermal management in extended-temperature deployments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16M words × 8 banks × 8 bits), enabling 128 MB byte-addressable capacity |
| Speed Grade | DDR3L-1600 (11-11-11), supporting 800 MHz clock (1600 MT/s) with tRCD/tRP/tAA ≤ 13.75 ns |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible with 1.5 V DDR3 systems |
| Operating Temp | –40°C ≤ TCASE ≤ 95°C (industrial grade), validated for full JEDEC AC/DC specs across range |
| CAS Latency | Programmable CL = 5, 6, 7, 8, 9, 10, 11 - determines minimum read access delay in clock cycles |
| CAS Write Latency | Programmable CWL = 5–8, aligned to frequency bin; sets write-to-strobe alignment timing |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height), RoHS-compliant, lead-free window BGA |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C); ASR/PASR support reduces refresh overhead in thermal stress |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm profile, and ball pitch of 0.8 mm. Ball layout conforms to JEDEC MO-275AC standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | Row/column address bits; A10 controls auto-precharge; A12 enables bank address extension |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation and interleaving |
| CK / CK# | Differential Clock | Edge-triggered command latch point; all commands sampled at CK rising / CK# falling crossing |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; referenced to DQS/DQS# for double-data-rate transfers |
| DQS / DQS# | Differential Strobe | Source-synchronous strobe: center-aligned on write, edge-aligned on read; enables timing margin recovery |
| DM | Data Mask | Per-byte write mask; suppresses individual byte writes without affecting other lanes in burst |
| RESET# | Asynchronous Reset | Active-low initialization trigger; initiates power-up sequence and mode register reset independent of clocks |
| ODT | On-Die Termination Control | Dynamic enable/disable of termination resistors (RTT_NOM/RTT_WR) on DQ/DQS/DM lines |
| WE#, RAS#, CAS# | Command Control | Standard DDR3 command pins defining READ/WRITE/ACTIVATE/PRECHARGE/REFRESH operations |
| VDD / VDDQ | Power Supplies | Separate 1.35 V supplies for core (VDD) and I/O (VDDQ); supports independent voltage scaling |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | One-time or periodic output driver and ODT impedance tuning using external 240 Ω ±1 % resistor to ground |
| Write Leveling | PHY-level training sequence that adjusts DQS launch delay relative to CK to compensate for board skew |
| Multi-Purpose Register (MPR) | Predefined bit pattern (0x00000000) readable via special MRS command to verify timing calibration stability |
| Dynamic ODT (Rtt_WR) | On-the-fly ODT activation during WRITE bursts only - improves signal integrity without impacting READ timing |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, cutting IDD6 by up to 40 % in partial-workload scenarios |
| Auto Self-Refresh (ASR) | Temperature-triggered refresh rate doubling (tREFI = 3.9 µs) above 85°C - maintains data retention without host intervention |
Applications
| Industrial HMI Controllers | Network Edge Routers |
|---|---|
Use Scenario: Human-machine interface running Linux-based UI with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary system memory interfacing directly to ARM Cortex-A9/A15 application processor via 16-bit DDR3L bus. Use Value: 1.35 V operation reduces thermal load in sealed enclosures; PASR and ASR extend uptime in unventilated cabinets up to 95°C ambient. |
Use Scenario: Layer 3 forwarding engine handling 1 Gbps packet buffering and ACL table lookups. IC Role / Device Role / Timing Role: Packet buffer memory co-located with network processor; operates in burst-intensive READ/WRITE interleaved mode. Use Value: Programmable CL/CWL and write leveling ensure timing closure across variable trace lengths; dynamic ODT minimizes signal reflections on high-speed backplane traces. |
| Medical Imaging Gateways | Automated Test Equipment (ATE) |
Use Scenario: DICOM image acquisition and preprocessing unit capturing ultrasound frames at 30 fps with local histogram analysis. IC Role / Device Role / Timing Role: Frame buffer and working memory for FPGA-accelerated image pipeline; accessed via AXI-HP interface. Use Value: Industrial temp rating (–40°C to +95°C) ensures reliability during sterilization cycles; MPR-read calibration confirms stable timing after thermal shock. |
Use Scenario: High-precision digital pattern generator requiring deterministic memory access for waveform sequencing and error injection. IC Role / Device Role / Timing Role: Pattern storage memory synchronized to 200 MHz system clock; accessed with strict tAA/tRCD compliance. Use Value: DDR3L-1600 speed bin guarantees 13.75 ns tRCD min - meets sub-14 ns setup windows required for 5 ns resolution test vectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-125KBL | 16-bit bus width (vs. 8-bit), 2 G-bit density, same DDR3L-1600 speed grade and –40°C to +95°C rating | Requires PCB redesign for 96-ball FBGA and doubled data bus; suited for higher-throughput SoCs with x16 interfaces | Select when bandwidth >2.5 GB/s is required and controller supports x16 configuration |
| MT41K128M8RH-125:E | Micron part with identical 1 G-bit × 8 organization, VFBGA-78, and DDR3L-1600 spec; differs in ODT truth table and MPR behavior | Validated in JEDEC-compliant designs but requires revalidation of ZQ calibration sequence and write leveling exit timing | Choose for established Micron design ecosystems where second-source qualification is mandated |
Compared with IS43TR16128B-125KBL and MT41K128M8RH-125:E, W631GU8MB12I offers native x8 interface compatibility, lower pin count routing simplicity, and Winbond-specific ASR/PASR implementation optimized for intermittent thermal stress - making it preferable for space-constrained industrial controllers where x16 overhead is unjustified.
Availability
W631GU8MB12I is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.
Supply support for W631GU8MB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W631GU8MB12I belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant low-voltage memory with extended temperature resilience and robust signal integrity features.
FAQ
What is the maximum supported CAS latency for W631GU8MB12I at DDR3L-1600 speed?
W631GU8MB12I supports programmable CAS latency values of CL = 5, 6, 7, 8, 9, 10, and 11 at DDR3L-1600 speed. The maximum valid setting is CL = 11, which corresponds to a tAA of 13.75 ns minimum - verified under full industrial temperature range (–40°C to +95°C) and 1.35 V supply conditions per the official datasheet revision A02.
Does W631GU8MB12I support both DDR3 and DDR3L voltage levels?
Yes, W631GU8MB12I is backward compatible with standard DDR3 1.5 V operation (±0.075 V) in addition to DDR3L 1.35 V nominal (1.283–1.45 V). This dual-voltage capability allows seamless integration into legacy 1.5 V systems or migration paths to low-power DDR3L designs without hardware modification - confirmed in Section 11 of the datasheet.
How does the write leveling function work in W631GU8MB12I?
W631GU8MB12I implements JEDEC-standard write leveling where the memory controller adjusts DQS launch timing relative to CK to compensate for flight-time mismatch. The DRAM returns a fixed pattern via DQ during leveling mode, and the controller iteratively shifts DQS until valid capture is achieved - detailed in Sections 8.9 and 10.16.5 of the W631GU8MB12I datasheet.
What package type and dimensions does W631GU8MB12I use?
W631GU8MB12I uses a VFBGA-78 package measuring 8 mm × 10.5 mm with 1.0 mm thickness and 0.8 mm ball pitch. It follows JEDEC MO-275AC mechanical standards and employs lead-free, RoHS-compliant materials - specified in Section 12 of the datasheet and confirmed in the order information table for the "12I" industrial-grade variant.
Can W631GU8MB12I operate in Partial Array Self-Refresh (PASR) mode?
Yes, W631GU8MB12I supports PASR via MR2 programming (bits A0–A2), allowing refresh to be restricted to selected banks only. This reduces self-refresh current (IDD6) significantly in applications with sparse memory access patterns - a key feature validated for industrial temperature operation and documented in Section 8.3.3.1 of the W631GU8MB12I datasheet.
W631GU8MB12I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (10.5x8)
W631GU8MB12I FAQ
1.How can I place an order for W631GU8MB12I through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8MB12I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8MB12I reliable?
The price and inventory of W631GU8MB12I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8MB12I is usually 5 days.
3.What payment methods are accepted for W631GU8MB12I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8MB12I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8MB12I?
W631GU8MB12I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8MB12I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8MB12I?
For technical support, including W631GU8MB12I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8MB12I requirements.
6.How does Aetrix verify that W631GU8MB12I is sourced from the original manufacturer or authorized distributors?
All W631GU8MB12I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8MB12I meets industry standards.
7.What is the process for return or replacement of W631GU8MB12I?
All W631GU8MB12I units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8MB12I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8MB12I part is unused and in its original packaging.
Return procedure for W631GU8MB12I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8MB12I Tags
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