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Winbond Electronics Corporation W631GU8MB12I TR
- Part No.:
- W631GU8MB12I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8MB12I TR.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 78VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W631GU8MB12I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-1600 speed grade (11-11-11 CL-tRCD-tRP), and delivering up to 1600 MT/s data rates for embedded computing and networking memory subsystems.
For engineers reviewing the W631GU8MB12I TR datasheet, W631GU8MB12I TR pinout, W631GU8MB12I TR application, or W631GU8MB12I TR equivalent, this page delivers verified timing parameters, ball mapping, ODT configuration options, ZQ calibration support, and industrial-grade thermal validation - all critical for DDR3L interface design, signal integrity planning, and JEDEC-compliant layout implementation.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O synchronized to CK/CK#. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.
The device integrates on-die termination (ODT) with synchronous and dynamic modes, ZQ calibration using external 240 Ω resistor, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-DQS skew compensation, and partial array self-refresh (PASR) for power optimization in memory-constrained systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (16M × 8 banks × 8 bits); enables 128 MB of byte-accessible memory per chip in x8 configuration. |
| Data Rate | 1600 MT/s (DDR3L-1600); requires 800 MHz differential clock input (tCK = 1.25 ns min). |
| CAS Latency | CL = 5–11; determines minimum tAA delay (e.g., CL=11 → tAA ≥13.75 ns at 800 MHz), directly impacting read access timing. |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V; supports 1.35 V nominal operation with backward compatibility to 1.5 V DDR3 systems. |
| Operating Temp | –40°C ≤ TCASE ≤ +95°C; validated across full industrial range with doubled refresh rate (tREFI = 3.9 µs) above 85°C. |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height); RoHS-compliant, lead-free window BGA with 0.8 mm ball pitch. |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C); mandates ASR or manual self-refresh mode activation above 85°C. |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with 0.8 mm ball pitch, RoHS-compliant lead-free construction. Ball grid arranged in 9×9 pattern with corner balls omitted (A1, A9, J1, J9 missing), total 78 functional balls.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1–A9, B1–B9, ..., J1–J9 (excluding A1, A9, J1, J9) | Ball signals per JEDEC DDR3L standard | 78-ball VFBGA layout includes VDD, VDDQ, VSS, VSSQ, CK/CK#, DQS/DQS#, DQ[0:7], DM, ADDR[0:14], BA[0:2], CKE, CS#, RAS#, CAS#, WE#, RESET#. |
| CK / CK# | Differential clock inputs | Latch all commands and address on rising edge of CK; define timing reference for all synchronous operations. |
| DQS / DQS# | Differential data strobes | Source-synchronous strobes: center-aligned with write data, edge-aligned with read data; used for write leveling calibration. |
| RESET# | Asynchronous reset input | Initiates power-up initialization sequence and resets internal state machines; active-low, sampled asynchronously. |
| ODT | On-die termination control | Configurable via MR1; selects RTT_NOM (60/120/∞ Ω) and RTT_WR (60/120 Ω) for signal integrity during reads/writes. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 5–8, matched to operating frequency (e.g., CWL = 6 at 800 MHz); sets write latency WL = AL + CWL for precise timing alignment. |
| ZQ Calibration | Uses external 240 Ω ±1% resistor to ground; calibrates output driver impedance (34 Ω typ.) and ODT values for consistent signal integrity across voltage/temperature. |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation during write bursts only; reduces stub reflections and improves write eye margin without affecting read paths. |
| Multi-Purpose Register (MPR) | Outputs predefined 128-bit pattern (0x00000000FF000000) on DQ pins; used for system-level timing calibration and DQ-to-DQS deskew verification. |
| Write Leveling | Hardware-assisted DQS phase adjustment via MRS commands; compensates for board-level DQ-DQS skew to meet setup/hold windows at high speeds. |
Applications
| Industrial HMI Controller | Network Edge Router |
|---|---|
|
Use Scenario: Real-time display rendering and touch response in factory-floor HMIs operating continuously at ambient temperatures up to 95°C. IC Role / Device Role / Timing Role: Primary system memory buffer interfacing with ARM Cortex-A9/A15 SoCs via 16-bit DDR3L bus; handles graphics frame buffers and firmware execution. Use Value: Industrial temperature rating (–40°C to +95°C) and ASR support ensure reliable operation without thermal throttling or refresh-induced latency spikes. |
Use Scenario: Packet buffering and forwarding table storage in fanless enterprise edge routers deployed in uncontrolled environments. IC Role / Device Role / Timing Role: Dual-rank DDR3L memory subsystem supporting 1600 MT/s throughput for ASIC-based packet processors requiring low-latency random access. Use Value: Dynamic ODT and write leveling enable robust signal integrity on dense 6-layer PCBs with >4-inch trace lengths, meeting JEDEC DDR3L-1600 eye mask requirements. |
| Medical Imaging Module | Automotive ADAS Camera ECU |
|
Use Scenario: High-resolution ultrasound image reconstruction where burst-mode memory bandwidth must sustain real-time FFT processing pipelines. IC Role / Device Role / Timing Role: Burst-read-optimized memory backing FPGA-accelerated DSP cores; leverages BL8 and interleaved burst ordering for sequential pixel stream access. Use Value: 11-11-11 timing (tRCD/tRP/tAA = 13.75 ns) and 800 MHz clock enable sub-15 ns read latency critical for pipeline continuity. |
Use Scenario: Vision-processing ECU capturing and preprocessing dual-camera feeds in automotive ADAS systems with extended temperature compliance. IC Role / Device Role / Timing Role: On-board memory for TI TDA3x or NXP S32V234 SoCs; supports ECC-capable controllers via x8 interface and configurable ODT for noise immunity. Use Value: Backward compatibility to 1.5 V DDR3 allows reuse of legacy power delivery designs while benefiting from 1.35 V DDR3L power savings in thermally constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128BL-125KBL | 16-bit x 64M organization (1 Gbit), same DDR3L-1600 speed, but uses 96-ball FBGA (10 mm × 13 mm); higher pin count limits routing density. | Targeted at server DIMMs and high-pin-count controllers; less suitable for space-constrained embedded boards. | Select when board layout accommodates larger footprint and controller supports x16 interface. |
| MT41K128M8RH-125:E | Same 128M × 8 organization and VFBGA-78 package, but Micron part specifies tREFI = 3.9 µs only up to 95°C (no 105°C J-grade option); lacks PASR support. | Valid for industrial 95°C use but not extended-temperature ADAS or military applications requiring PASR power gating. | Prefer for cost-sensitive designs where PASR and 105°C capability are unnecessary. |
Compared with IS43TR16128BL-125KBL and MT41K128M8RH-125:E, the W631GU8MB12I TR offers identical density and speed in a compact 8×10.5 mm VFBGA, plus industrial-grade PASR and ASR support - making it optimal for thermally constrained, power-aware embedded systems where board area and refresh management are critical.
Availability
W631GU8MB12I TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging modules, and automotive ADAS camera ECUs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GU8MB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU8MB series belongs to Winbond's industrial DDR3L SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, JEDEC compliance, and robust power management features like ASR and PASR.
FAQ
What is the maximum operating frequency supported by W631GU8MB12I TR?
The W631GU8MB12I TR supports DDR3L-1600 operation at 800 MHz clock frequency (1600 MT/s data rate), with minimum tCK = 1.25 ns. This speed grade is validated across the full industrial temperature range (–40°C to +95°C) and requires CL = 11, tRCD = tRP = 13.75 ns timing settings per JEDEC specification.
Does W631GU8MB12I TR support backward compatibility with standard 1.5 V DDR3 systems?
Yes, W631GU8MB12I TR supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L) and is fully backward compatible with 1.5 V ±0.075 V DDR3 systems. Voltage switching between modes is controlled via VDD/VDDQ supply rails and does not require mode register changes.
How is refresh managed at elevated temperatures for W631GU8MB12I TR?
At case temperatures above 85°C, W631GU8MB12I TR requires doubled refresh rate (tREFI = 3.9 µs). This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 bit A6 = 1, or by entering Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0, A7 = 1), both defined in the device's mode registers.
What package type and ball count does W631GU8MB12I TR use?
W631GU8MB12I TR uses a VFBGA-78 package: 8 mm × 10.5 mm body size, 1.0 mm thickness, 0.8 mm ball pitch, RoHS-compliant lead-free construction. The ball grid follows JEDEC-standard DDR3L layout with 78 functional connections and four corner balls omitted (A1, A9, J1, J9).
Can W631GU8MB12I TR be used with write leveling and MPR for system calibration?
Yes, W631GU8MB12I TR fully supports write leveling and Multi-Purpose Register (MPR) functionality. Write leveling adjusts DQS phase relative to CK for DQ-DQS skew compensation, while MPR outputs a fixed 128-bit pattern on DQ pins - both essential for high-speed DDR3L interface calibration and timing closure in production systems.
W631GU8MB12I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (10.5x8)
W631GU8MB12I TR FAQ
1.How can I place an order for W631GU8MB12I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8MB12I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8MB12I TR reliable?
The price and inventory of W631GU8MB12I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8MB12I TR is usually 5 days.
3.What payment methods are accepted for W631GU8MB12I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8MB12I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8MB12I TR?
W631GU8MB12I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8MB12I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8MB12I TR?
For technical support, including W631GU8MB12I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8MB12I TR requirements.
6.How does Aetrix verify that W631GU8MB12I TR is sourced from the original manufacturer or authorized distributors?
All W631GU8MB12I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8MB12I TR meets industry standards.
7.What is the process for return or replacement of W631GU8MB12I TR?
All W631GU8MB12I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8MB12I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8MB12I TR part is unused and in its original packaging.
Return procedure for W631GU8MB12I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8MB12I TR Tags
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