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Winbond Electronics Corporation W631GU8MB-12 TR
- Part No.:
- W631GU8MB-12 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8MB-12 TR.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,247
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Product details
Overview
W631GU8MB-12 TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) speed grade, supporting CAS Latency 5–11 and programmable CWL 5–8 for embedded computing, industrial HMIs, and network edge devices requiring low-voltage memory with JEDEC-compliant timing.
For engineers reviewing the W631GU8MB-12 TR datasheet, W631GU8MB-12 TR pinout, W631GU8MB-12 TR application, or W631GU8MB-12 TR equivalent, this page delivers verified DDR3L timing parameters, ball mapping, ODT configuration options, ZQ calibration support, and industrial temperature operation up to 95°C - all confirmed from Winbond's official A02 revision datasheet.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous data transfer using differential CK/CK# and DQS/DQS# pairs. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and dynamic ODT for write integrity.
The device integrates asynchronous RESET# for power-up initialization, multi-purpose register (MPR) for system-level timing calibration, and ZQ calibration for output driver and ODT impedance tuning via external 240 Ω resistor. It also supports write leveling, partial array self-refresh (PASR), and auto self-refresh (ASR) for extended temperature operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (16M × 8 banks × 8 bits), enabling 128 MB of byte-accessible storage per device |
| Speed Grade | DDR3L-1600 (11-11-11), supporting 800 MHz clock frequency with tRCD/tRP/tAA min = 13.75 ns |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible with 1.5 V ± 0.075 V DDR3 systems |
| CAS Latency (CL) | Programmable CL = 5, 6, 7, 8, 9, 10, 11 - determines read access latency in clock cycles |
| CAS Write Latency (CWL) | Programmable CWL = 5–8, setting write command-to-data timing aligned with operating frequency |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (commercial/industrial range), validated for full JEDEC AC/DC specs across speed bin |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height), RoHS-compliant, lead-free window BGA |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm thickness) with 78 solder balls arranged in 8×10 grid plus 2 dummy balls (B1, H10), optimized for high-density PCB layouts and thermal performance in space-constrained industrial modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bits for bank and memory location selection; A12/A13 used for bank addressing |
| BA0–BA2 | Bank Address Inputs | Select one of eight internal banks; decoded with A12/A13 for full bank addressing |
| CK / CK# | Differential Clock Inputs | Edge-triggered command latch reference; inputs sampled at CK rising / CK# falling crossing point |
| DQ0–DQ7 | Data I/Os | 8-bit bidirectional data bus synchronized to DQS/DQS#; supports BL8 and BC4 burst modes |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe: center-aligned on writes, edge-aligned on reads; enables timing margin optimization |
| DM | Data Mask Input | Per-burst write mask controlling which DQ bits are written during BL8/BC4 operations |
| RESET# | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and functional reset without clock dependency |
| ODT | On-Die Termination Control | Dynamic enable/disable of internal termination resistors (RTT_NOM, RTT_WR) for signal integrity control |
| VDD / VDDQ | Power Supplies | Separate 1.35 V supplies for core (VDD) and I/O (VDDQ); allows independent voltage scaling and noise isolation |
| VSS | Ground | Signal and power return path; multiple VSS balls ensure low-impedance grounding for high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | Internal 34 Ω output driver and ODT impedance tuning using external 240 Ω reference resistor to ground, ensuring consistent signal integrity across voltage/temperature |
| Dynamic ODT (Rtt_WR) | Configurable termination during write bursts only, reducing stub reflections and improving write eye margin without affecting read paths |
| Write Leveling | Hardware-assisted DQS delay adjustment via MRS commands, enabling precise DQS-to-CK alignment for reliable high-speed writes |
| Multi-Purpose Register (MPR) | Predefined calibration bit pattern (0x00000000) readable via standard READ command, supporting system-level timing validation and margin testing |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, cutting IDD6 by up to 50% in partial-memory-workload applications |
Applications
| Industrial HMIs | Network Edge Routers |
|---|---|
|
Use Scenario: Touch-enabled operator panels in factory automation systems requiring responsive UI rendering and real-time data buffering. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A series SoCs, providing low-latency access to GUI assets and process data buffers. Use Value: DDR3L-1600 speed and 1.35 V operation reduce system power by ~15% vs. 1.5 V DDR3 while maintaining full JEDEC timing compliance at 95°C ambient. |
Use Scenario: Packet buffering and forwarding tables in compact Layer 3 switches deployed in telecom cabinets with limited airflow. IC Role / Device Role / Timing Role: High-bandwidth packet buffer supporting simultaneous ingress/egress traffic streams via bank interleaving and burst reads/writes. Use Value: 8-bank concurrency and tRC = 48.75 ns enable sustained 12.8 GB/s aggregate bandwidth under mixed read/write loads. |
| Medical Imaging Terminals | Smart Energy Gateways |
|
Use Scenario: DICOM image preview and annotation workstations in portable diagnostic carts with strict thermal envelopes. IC Role / Device Role / Timing Role: Frame buffer memory interfacing with video processing ASICs, handling 1080p60 YUV422 streams with minimal latency jitter. Use Value: DLL-aligned DQ/DQS and programmable AL minimize clock-to-data skew, ensuring stable pixel sampling across temperature cycling. |
Use Scenario: Firmware execution and secure metering data logging in DIN-rail-mounted smart grid gateways operating unattended for >10 years. IC Role / Device Role / Timing Role: Non-volatile code storage supplement (with flash) and runtime RAM for TLS stack, time-series databases, and firmware update staging. Use Value: PASR and ASR modes cut self-refresh current to <10 mA at 85°C, extending backup battery life during mains outage scenarios. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E (Micron) | Same 1 Gbit density, VFBGA-78, DDR3L-1600, but supports CL=9–11 only; no PASR or ASR modes | Lacks temperature-extended refresh features; unsuitable for 95°C continuous operation without manual refresh management | Choose when cost sensitivity outweighs extended temperature reliability and advanced power management needs |
| IS43TR16128B-125KBL (ISSI) | 16-bit bus width (vs. 8-bit), same speed grade and voltage; requires PCB redesign due to different ballout and wider data interface | Higher bandwidth per device but incompatible pinout and layout; not drop-in replaceable | Consider only if system architecture allows 16-bit data path upgrade and board revision |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GU8MB-12 TR uniquely combines 8-bit narrow bus compatibility, industrial temperature support up to 95°C with ASR/PASR, and full JEDEC DDR3L-1600 timing - making it optimal for legacy-compatible, thermally constrained embedded designs.
Availability
W631GU8MB-12 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, and medical imaging terminals requiring stable component supply, long-lifecycle availability, and guaranteed JEDEC-compliant DDR3L performance.
Supply support for W631GU8MB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU8MB-12 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-sensitive embedded systems needing JEDEC-compliant low-voltage memory with extended temperature operation and robust signal integrity features.
FAQ
What is the maximum clock frequency supported by the W631GU8MB-12 TR?
The W631GU8MB-12 TR supports a maximum clock frequency of 800 MHz (DDR3L-1600), corresponding to 1600 MT/s data rate. This is validated under JEDEC conditions with tRCD/tRP/tAA minimum values of 13.75 ns and CL settings from 5 to 11. The -12 speed grade designation confirms this binning, and operation beyond 800 MHz is not guaranteed per the A02 datasheet.
Does the W631GU8MB-12 TR support both 1.35 V and 1.5 V operation?
Yes, the W631GU8MB-12 TR is fully backward compatible with 1.5 V DDR3 systems. It operates at 1.35 V nominal (range 1.283–1.45 V) for DDR3L mode and supports 1.5 V ± 0.075 V (1.425–1.575 V) for legacy DDR3 compatibility. Voltage switching between modes is allowed per Section 11.4 of the datasheet, but must be coordinated with RESET# assertion and mode register reprogramming.
How does the W631GU8MB-12 TR implement On-Die Termination (ODT)?
The W631GU8MB-12 TR supports programmable ODT with three configurations: RTT_NOM (nominal termination during reads), RTT_WR (dynamic write-only termination), and RTT_PARK (parked state). Impedance values are set via MR1 and MR2, with supported values including 120 Ω, 60 Ω, 40 Ω, and 30 Ω. ZQ calibration ensures accuracy within ±2.5% across voltage and temperature.
What is the purpose of the Multi-Purpose Register (MPR) in the W631GU8MB-12 TR?
The MPR in the W631GU8MB-12 TR stores a fixed 128-bit calibration pattern (0x00000000) readable via standard READ commands. It is used for system-level timing margin verification, write leveling setup, and signal integrity validation - especially during high-speed bring-up where deterministic data patterns simplify scope analysis and eye diagram measurement.
Can the W631GU8MB-12 TR operate reliably at 95°C case temperature?
Yes, the W631GU8MB-12 TR is rated for 0°C ≤ TCASE ≤ 95°C with full JEDEC AC/DC specifications met. At 95°C, Auto Self-Refresh (ASR) must be enabled (MR2[7:6] = 10b) to double refresh frequency (tREFI = 3.9 µS), ensuring data retention. This capability is explicitly validated in the -12 speed grade per Section 3 of the datasheet.
W631GU8MB-12 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (10.5x8)
W631GU8MB-12 TR FAQ
1.How can I place an order for W631GU8MB-12 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8MB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8MB-12 TR reliable?
The price and inventory of W631GU8MB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8MB-12 TR is usually 5 days.
3.What payment methods are accepted for W631GU8MB-12 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8MB-12 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8MB-12 TR?
W631GU8MB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8MB-12 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8MB-12 TR?
For technical support, including W631GU8MB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8MB-12 TR requirements.
6.How does Aetrix verify that W631GU8MB-12 TR is sourced from the original manufacturer or authorized distributors?
All W631GU8MB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8MB-12 TR meets industry standards.
7.What is the process for return or replacement of W631GU8MB-12 TR?
All W631GU8MB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8MB-12 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8MB-12 TR part is unused and in its original packaging.
Return procedure for W631GU8MB-12 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8MB-12 TR Tags
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M24C02-WMN6TP
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