Winbond Electronics Corporation W631GU8MB15I TR

Overview

W631GU8MB15I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1333 (9-9-9) timing, supporting -40°C to +95°C industrial temperature range and featuring programmable CAS latency (CL=5–10), on-die termination (ODT), ZQ calibration, and asynchronous RESET#. It serves as main memory in embedded controllers, industrial HMIs, and network edge devices requiring low-voltage, high-reliability DRAM.

For engineers reviewing the W631GU8MB15I TR datasheet, W631GU8MB15I TR pinout, W631GU8MB15I TR application, or W631GU8MB15I TR equivalent, key selection criteria include its DDR3L-1333 speed bin, industrial-grade temperature support, VFBGA78 package compatibility, and JEDEC-compliant ODT and write leveling features for signal integrity in dense PCB layouts.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and source-synchronous DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to CK, supporting posted CAS with additive latency (AL = 0, CL−1, CL−2) to improve bus efficiency.

It supports full JEDEC DDR3L command set including ACTIVE, PRECHARGE, READ/WRITE with auto-precharge, REFRESH, SELF-REFRESH, and power-down modes (precharged and active). Mode registers MR0–MR3 configure CAS latency, CWL, ODT RTT values, PASR, ASR, dynamic ODT, and MPR readout for system-level timing calibration.

Key Specifications

Pinout & Package

VFBGA78 package (8 mm × 10.5 mm, 1.0 mm thickness, ball pitch 0.8 mm), RoHS-compliant, window-type BGA with bottom-side thermal pad not electrically connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GU8MB15I TR offers identical DDR3L-1333 performance but uniquely combines industrial temperature validation, VFBGA78 footprint efficiency, and JEDEC-compliant write leveling and PASR-making it optimal for space-constrained, thermally demanding embedded systems.

Availability

W631GU8MB15I TR is available at Aetrix Electronics and suitable for industrial HMIs, edge network routers, medical imaging subsystems, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU8MB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and computing markets.

The W631GU8MB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded applications demanding extended temperature operation, low-power memory, and JEDEC-compliant signal integrity features.

FAQ

What is the maximum clock frequency supported by the W631GU8MB15I TR?

The W631GU8MB15I TR supports a maximum clock frequency of 667 MHz, corresponding to DDR3L-1333 operation (1333 MT/s data rate). This is validated under industrial temperature conditions (-40°C to +95°C) with tCK(AVG) = 1.5 ns minimum for CL=9 and CWL=7, per JEDEC specification and Winbond's AC timing table.

Does the W631GU8MB15I TR support backward compatibility with standard 1.5 V DDR3 systems?

Yes, the W631GU8MB15I TR supports backward compatibility with 1.5 V DDR3 systems. Its VDD and VDDQ pins accept 1.5 V ± 0.075 V, allowing drop-in replacement in legacy DDR3 designs without hardware modification, though full DDR3L low-power benefits require 1.35 V operation.

What package type and dimensions does the W631GU8MB15I TR use?

The W631GU8MB15I TR uses a VFBGA78 package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch and 1.0 mm height. It is RoHS-compliant, lead-free, and features a window-type BGA construction with no electrically connected thermal pad on the bottom side.

How does the W631GU8MB15I TR implement on-die termination (ODT)?

The W631GU8MB15I TR implements programmable ODT via mode register MR1, supporting RTT_NOM values of 120 Ω, 60 Ω, 40 Ω, and 30 Ω, plus dynamic ODT (Rtt_WR) during WRITE operations. ODT is applied to DQ, DQS/DQS#, and DM lines, calibrated using external 240 Ω ZQ resistor per JEDEC DDR3L requirements.

Can the W631GU8MB15I TR operate in partial array self-refresh (PASR) mode?

Yes, the W631GU8MB15I TR supports Partial Array Self-Refresh (PASR) via MR2 configuration. PASR allows refreshing only selected banks or subarrays, reducing self-refresh current by up to 50% compared to full-array refresh-critical for battery-backed or thermally sensitive applications where power and heat must be minimized.