My Inquiry
My Account
Winbond Electronics Corporation W631GU8MB-15 TR
- Part No.:
- W631GU8MB-15 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8MB-15 TR.pdf
- Description:
- IC DRAM 1GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,710
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W631GU8MB-15 TR from Winbond is a 1 Gb (128 MB) DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1333 speed grade (9-9-9 CL-tRCD-tRP), supporting CAS Latency 5–10 and CWL 5–7, and designed for low-power embedded systems requiring JEDEC-compliant memory in industrial temperature range (0°C to 95°C).
For engineers reviewing the W631GU8MB-15 TR datasheet, W631GU8MB-15 TR pinout, W631GU8MB-15 TR application, or W631GU8MB-15 TR equivalent, key selection considerations include its 78-ball VFBGA package, support for ZQ calibration, dynamic ODT, write leveling, MPR-based timing calibration, and compatibility with DDR3L-1333 timing across standard and extended temperature operation.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access and high bandwidth efficiency. It uses differential CK/CK# inputs for command/address latching and differential DQS/DQS# for source-synchronous data transfer, with DLL alignment of DQ and DQS edges to CK.
It supports programmable features including additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, partial array self-refresh (PASR), and asynchronous RESET# for power-up initialization. Mode registers MR0–MR3 configure CAS latency, CWL, ODT settings, PASR, ASR, and MPR functionality.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB), organized as 16M words × 8 banks × 8 bits |
| Data Rate | DDR3L-1333: 1333 MT/s (667 MHz clock frequency) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V |
| CAS Latency | Configurable CL = 5, 6, 7, 8, 9, or 10 (tAA min = 13.5 ns at CL=9) |
| CAS Write Latency | Configurable CWL = 5, 6, or 7 (WL = AL + CWL) |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (industrial grade, non-extended) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free) |
| Refresh Interval | tREFI = 7.8 µs at 0°C–85°C; 3.9 µs at 85°C–95°C (doubled refresh required) |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm thickness, ball pitch 0.8 mm), RoHS-compliant, lead-free construction. Ball map follows JEDEC MO-271AC standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | Row/column address bits; A10 used for auto-precharge control |
| BA0–BA2 | Bank Address | Select one of eight internal banks for concurrent operation |
| CK, CK# | Differential Clock | Edge-triggered command/address capture; defines system timing reference |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; double-data-rate transfers synchronized to DQS/DQS# |
| DQS, DQS# | Differential Data Strobe | Source-synchronous strobe; center-aligned on write, edge-aligned on read |
| DM | Data Mask | Per-byte write mask; suppresses selected DQ bits during burst writes |
| RESET# | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and mode register reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of termination resistors on DQ/DQS/DM lines |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (active-low); decoded with A0–A12 and BA0–BA2 |
| VDD, VDDQ | Power Supplies | Separate 1.35 V supplies for core (VDD) and I/O (VDDQ); supports 1.5 V backward compatibility |
| VSS | Ground | Common reference for all signals and power domains |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1 % resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic On-Die Termination (ODT) | Programmable RTT values (60 Ω, 120 Ω, 40 Ω) and dynamic activation during writes to improve signal integrity |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor to maintain ±10 % output driver and ODT impedance accuracy over voltage/temperature |
| Write Leveling Support | Enables controller-to-DRAM timing alignment by adjusting DQS launch delay relative to CK, critical for reliable high-speed writes |
| Multi-Purpose Register (MPR) | Read-only register delivering predefined bit pattern (0x00000000) for system-level timing margin verification and calibration |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50 % by refreshing only active memory banks, extending battery life in portable applications |
| Asynchronous RESET# | Guarantees deterministic initialization state independent of clock stability, simplifying power sequencing in resource-constrained systems |
Applications
| Industrial HMI Panels | Network Edge Routers |
|---|---|
Use Scenario: Touch-enabled human-machine interface with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A series SoC, buffering display frame buffers and application code. Use Value: DDR3L-1333 bandwidth meets 60 Hz UI refresh requirements while 1.35 V operation reduces thermal load in sealed enclosures. |
Use Scenario: Compact Layer 3 switch handling packet buffering, ACL table storage, and firmware execution. IC Role / Device Role / Timing Role: Shared system memory for packet buffer management and control plane processing in dual-core MIPS-based networking SoC. Use Value: 8-bank concurrency enables simultaneous packet ingress/egress buffering without bank conflict stalls. |
| Medical Diagnostic Terminals | Smart Energy Meters |
Use Scenario: Portable ultrasound imaging device requiring fast image reconstruction and DICOM metadata handling. IC Role / Device Role / Timing Role: High-reliability working memory interfaced to FPGA-accelerated image processing pipeline. Use Value: PASR and extended 0°C–95°C operation ensure stable performance during battery-powered field use and ambient temperature variation. |
Use Scenario: Two-way communication meter with firmware update capability, tamper detection, and waveform capture. IC Role / Device Role / Timing Role: Code/data memory for ARM Cortex-M7 MCU executing secure boot, encryption, and real-time sampling routines. Use Value: Low IDD6 (≤10 mA) self-refresh current extends battery backup runtime during mains outage without compromising data retention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E (Micron) | Same density, 78-ball VFBGA, DDR3L-125 (1600 MT/s), CL=11, tRC = 48.75 ns | Higher speed grade; requires tighter layout and higher power delivery; not drop-in compatible with W631GU8MB-15 TR timing | Select when system design targets DDR3L-1600 and can accommodate revised tRCD/tRP/tAA constraints. |
| IS43TR16128B-15HBL (ISSI) | 1 Gb × 16-bit configuration (vs. ×8), 96-ball VFBGA, DDR3L-1333, CL=9, tRC = 49.5 ns | Wider data bus increases throughput but requires PCB redesign; different pinout and power sequencing behavior | Choose for bandwidth-critical applications needing 16-bit interface; not pin-compatible with W631GU8MB-15 TR. |
Compared with MT41K128M8RH-125:E and IS43TR16128B-15HBL, the W631GU8MB-15 TR offers optimized cost-performance balance for DDR3L-1333 systems with strict thermal and layout constraints, retaining full JEDEC compliance and industrial temperature support without requiring board rework.
Availability
W631GU8MB-15 TR is available at Aetrix Electronics and suitable for industrial HMI panels, network edge routers, medical diagnostic terminals, and smart energy meters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for W631GU8MB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GU8MB-15 TR belongs to Winbond's DDR3L SDRAM product line, engineered for low-voltage, high-reliability embedded applications where power efficiency, JEDEC compliance, and extended temperature operation are essential design requirements.
FAQ
What is the maximum operating frequency supported by the W631GU8MB-15 TR?
The W631GU8MB-15 TR is rated for DDR3L-1333 operation, meaning it supports a maximum data rate of 1333 MT/s with a clock frequency of 667 MHz. Its tCK(AVG) specification allows stable operation down to 1.5 ns (667 MHz) for CL=9/CWL=7 configurations, and it complies fully with JEDEC JESD79-3F for DDR3L-1333 timing at 0°C to 95°C.
Does the W631GU8MB-15 TR support both 1.35 V and 1.5 V operation?
Yes, the W631GU8MB-15 TR supports dual-voltage operation: nominal 1.35 V (range 1.283 V–1.45 V) for DDR3L mode and backward compatibility with 1.5 V ± 0.075 V (1.425 V–1.575 V) for legacy DDR3 systems. Voltage switching must follow JEDEC-specified sequencing - VDD/VDDQ must ramp together, and mode register settings must be reprogrammed after voltage change.
How does the W631GU8MB-15 TR implement On-Die Termination (ODT)?
The W631GU8MB-15 TR provides programmable ODT via MR1 and MR2, supporting RTT_NOM values of 60 Ω, 120 Ω, or 40 Ω, plus dynamic ODT (Rtt_WR) during writes. ODT is enabled per-bank and controlled by the ODT pin; it applies to DQ, DQS/DQS#, and DM lines, improving signal integrity without external resistors.
What is the purpose of the ZQ pin on the W631GU8MB-15 TR?
The ZQ pin on the W631GU8MB-15 TR connects to a 240 Ω ±1 % external resistor to ground and enables factory-trimmed and runtime-calibrated output driver strength and ODT impedance. ZQ calibration ensures ±10 % impedance accuracy across voltage and temperature, critical for maintaining signal integrity at DDR3L-1333 speeds.
Can the W631GU8MB-15 TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, the W631GU8MB-15 TR supports PASR via MR2, allowing selective self-refresh of ¼, ½, or ¾ of the memory array. This feature reduces IDD6 current by up to 50 % compared to full-array self-refresh, directly extending battery life in portable and energy-sensitive applications without sacrificing data retention.
W631GU8MB-15 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (10.5x8)
W631GU8MB-15 TR FAQ
1.How can I place an order for W631GU8MB-15 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8MB-15 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8MB-15 TR reliable?
The price and inventory of W631GU8MB-15 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8MB-15 TR is usually 5 days.
3.What payment methods are accepted for W631GU8MB-15 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8MB-15 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8MB-15 TR?
W631GU8MB-15 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8MB-15 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8MB-15 TR?
For technical support, including W631GU8MB-15 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8MB-15 TR requirements.
6.How does Aetrix verify that W631GU8MB-15 TR is sourced from the original manufacturer or authorized distributors?
All W631GU8MB-15 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8MB-15 TR meets industry standards.
7.What is the process for return or replacement of W631GU8MB-15 TR?
All W631GU8MB-15 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8MB-15 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8MB-15 TR part is unused and in its original packaging.
Return procedure for W631GU8MB-15 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8MB-15 TR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
