Winbond Electronics Corporation W631GU8NB-09

Overview

W631GU8NB-09 from Winbond Electronics is a 1 Gb (128 MB) DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), supporting up to 2133 MT/s data rates in systems requiring low-voltage memory for embedded computing and industrial controllers.

For engineers reviewing the W631GU8NB-09 datasheet, W631GU8NB-09 pinout, W631GU8NB-09 application, or W631GU8NB-09 equivalent, key selection considerations include its VFBGA-78 package, -40°C to +95°C industrial temperature range, programmable CAS latency (CL = 5–14), ZQ calibration support, and compatibility with DDR3L-2133 timing requirements in space-constrained, power-sensitive designs.

Technical Context

This device implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and source-synchronous DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and programmable CWL (5–10) to optimize command bus efficiency across frequency bins.

W631GU8NB-09 integrates asynchronous RESET#, dynamic on-die termination (Rtt_WR), multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-DQS skew compensation, and dual-mode ODT (synchronous/dynamic) with RTT values configurable via MR1 and MR2. Its ZQ calibration uses an external 240 Ω resistor to calibrate output drivers and ODT impedances.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm profile, and ball pitch of 0.8 mm. Ball map conforms to JEDEC MO-275AA standard for DDR3L SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GU8NB-09 delivers higher bandwidth (2133 MT/s vs. 1600 MT/s), finer-grained thermal management (PASR/ASR), and hardware-assisted calibration (write leveling, MPR), making it optimal for space- and power-constrained industrial systems where timing margin and long-term reliability are critical.

Availability

W631GU8NB-09 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging equipment requiring stable component supply, long-lifecycle support, and guaranteed availability through 2030.

Supply support for W631GU8NB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W631GU8NB-09 belongs to Winbond's DDR3L SDRAM product line, designed specifically for low-power, high-reliability embedded systems where voltage scalability, extended temperature operation, and JEDEC-compliant timing robustness are required.

FAQ

What is the maximum data rate supported by W631GU8NB-09?

W631GU8NB-09 supports DDR3L-2133 operation with a maximum data transfer rate of 2133 MT/s, corresponding to a clock frequency of 1066 MHz and a minimum tCK of 0.938 ns. This is validated under JEDEC conditions with CL = 14, tRCD = 14, and tRP = 14 at VDD/VDDQ = 1.35 V and 0°C ≤ TCASE ≤ 95°C. The W631GU8NB-09 achieves this performance using its 8-bit prefetch architecture and DLL-aligned DQS-to-clock relationship.

Does W631GU8NB-09 support both DDR3L and standard DDR3 voltage levels?

Yes, W631GU8NB-09 is backward compatible with 1.5 V DDR3 operation (VDD/VDDQ = 1.5 V ± 0.075 V) while fully compliant with DDR3L specifications at 1.35 V. Voltage switching between modes is supported via controlled ramping and must be coordinated with RESET# assertion and mode register reprogramming. The W631GU8NB-09 maintains identical timing parameters and functionality across both voltage ranges, enabling seamless migration in existing DDR3 designs.

How does write leveling work on W631GU8NB-09?

Write leveling on W631GU8NB-09 is a hardware-assisted calibration sequence initiated by the memory controller that adjusts DQS launch delay relative to CK to compensate for flight-time skew. The W631GU8NB-09 responds with a known pattern on DQ, allowing the controller to determine optimal DQS phase. This process is mandatory before normal operation at 2133 MT/s and is defined in JEDEC JESD79-3F; the W631GU8NB-09 implements full compliance including DQS gating and feedback timing windows.

What package type and dimensions does W631GU8NB-09 use?

W631GU8NB-09 uses a VFBGA-78 (Very Thin Fine-Pitch Ball Grid Array) package measuring 8.0 mm × 10.5 mm with 1.0 mm maximum height and 0.8 mm ball pitch. It follows JEDEC MO-275AA mechanical standards and employs lead-free, RoHS-compliant materials. The W631GU8NB-09's compact footprint supports high-density routing in space-constrained industrial PCBs while maintaining thermal performance up to 95°C case temperature.

Can W631GU8NB-09 operate in partial array self-refresh (PASR) mode?

Yes, W631GU8NB-09 supports Partial Array Self Refresh (PASR) via MR2 programming (A6/A5/A4 bits), allowing refresh cycles to target only active banks. This reduces self-refresh current (IDD6) proportionally - e.g., refreshing four banks instead of eight cuts IDD6 by ~30%. PASR is particularly valuable in battery-powered or thermally constrained applications. The W631GU8NB-09 implements PASR per JEDEC JESD79-3F and validates operation across its full temperature range.