Winbond Electronics Corporation W631GU8NB09I

Overview

W631GU8NB09I from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35V nominal supply with industrial temperature range (−40°C to +95°C), supporting DDR3L-2133 speed (14-14-14 CL/tRCD/tRP), and delivering up to 17.06 GB/s peak bandwidth in burst mode for embedded computing and networking memory subsystems.

For engineers reviewing the W631GU8NB09I datasheet, W631GU8NB09I pinout, W631GU8NB09I application, or W631GU8NB09I equivalent, this device requires attention to its VFBGA-78 package layout, DDR3L-2133 timing compliance, industrial-grade thermal validation, and ZQ calibration dependency for signal integrity in high-speed memory interfaces.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing relative to CK/CK#, and programmable CAS Write Latency (CWL) matched to frequency bins. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and dynamic on-die termination (Rtt_WR) for write-time impedance control.

The device uses asynchronous RESET# for power-up initialization and supports system-level calibration via write leveling and Multi-Purpose Register (MPR) readout of predefined timing bit patterns. Its ZQ calibration references an external 240 Ω resistor to adjust output driver and ODT impedances across voltage and temperature.

Key Specifications

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free), ball pitch 0.8 mm, window-type BGA layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GU8NB09I delivers 33% higher peak bandwidth (17.06 vs. 12.8 GB/s) and supports tighter 14-14-14 timing at 1066 MHz, making it optimal for bandwidth-constrained industrial controllers where VFBGA-78 footprint and DDR3L-2133 compliance are mandatory.

Availability

W631GU8NB09I is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging modules, automated test equipment, and embedded vision systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for W631GU8NB09I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU8NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, JEDEC-compliant timing robustness, and system-level calibration features like write leveling and MPR.

FAQ

What is the maximum clock frequency supported by W631GU8NB09I?

W631GU8NB09I supports DDR3L-2133 operation with a maximum clock frequency (fCK) of 1066 MHz. This corresponds to a minimum clock period (tCK) of 0.938 ns at CL=14/CWL=10. The device achieves this speed while maintaining full JEDEC AC/DC specifications across its industrial temperature range of −40°C to +95°C.

Does W631GU8NB09I require external termination resistors?

No, W631GU8NB09I integrates programmable on-die termination (ODT) for DQ, DQS/DQS#, and DM signals. It supports static Rtt_NOM and dynamic Rtt_WR modes, calibrated via internal ZQ circuitry referencing an external 240 Ω resistor. No external parallel termination is needed on the data/strobe lines.

How does W631GU8NB09I handle refresh at elevated temperatures?

At case temperatures above 85°C, W631GU8NB09I doubles its auto-refresh frequency (tREFI = 3.9 µS instead of 7.8 µS). This is managed automatically via Auto Self Refresh (ASR) mode when enabled (MR2[7]=1), or manually via Self Refresh entry with Extended Temperature Range capability (MR2[6]=0, MR2[7]=1).

Can W631GU8NB09I operate at 1.5V supply voltage?

Yes, W631GU8NB09I is backward compatible with standard DDR3 1.5V operation (VDD/VDDQ = 1.5V ± 0.075V). However, it must be configured for DDR3 mode via mode registers, and performance is limited to DDR3-1333/1600 speed grades - DDR3L-2133 timing is not guaranteed at 1.5V.

What is the purpose of the Multi-Purpose Register (MPR) in W631GU8NB09I?

The MPR in W631GU8NB09I outputs a fixed 128-bit calibration pattern upon read command, enabling system-level timing margin analysis and write leveling setup without accessing user memory. It is essential for validating DQ-DQS alignment and establishing reliable eye diagrams during high-speed DDR3L-2133 initialization.