Winbond Electronics Corporation W631GU8NB09I TR

Overview

W631GU8NB09I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-2133 (14-14-14) timing and delivering up to 2133 MT/s data rates for embedded computing, networking, and industrial control memory subsystems.

For engineers reviewing the W631GU8NB09I TR datasheet, W631GU8NB09I TR pinout, W631GU8NB09I TR application, or W631GU8NB09I TR equivalent, this page delivers verified DDR3L timing parameters, ball configuration, ODT programming modes, ZQ calibration support, and industrial-grade thermal validation - all confirmed against Winbond's official A01 revision datasheet (Jan. 2021).

Technical Context

This device implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS-to-clock synchronization, and source-synchronous differential strobe I/O. It supports programmable CAS Latency (CL = 5–14), CAS Write Latency (CWL = 5–10), and additive latency (AL = 0, CL−1, CL−2) to optimize command bus efficiency.

Key functional blocks include asynchronous RESET# for power-up initialization, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-DQS skew compensation, and dynamic on-die termination (Rtt_WR) with configurable RTT values (60 Ω, 120 Ω, 40 Ω) during write operations.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and 0.8 mm ball pitch. Ball layout follows JEDEC-standard DDR3L pin assignment for x8 organization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with IS43TR16128B-2BLI and MT41K128M8RH-125:E, W631GU8NB09I TR offers optimal fit for space-constrained industrial PCBs requiring x8 interface, minimal footprint (8×10.5 mm), and guaranteed DDR3L-2133 performance across –40°C to +95°C without layout or timing revalidation.

Availability

W631GU8NB09I TR is available at Aetrix Electronics and suitable for industrial HMI systems, network switch buffers, medical imaging controllers, and ruggedized edge AI gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU8NB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W631GU8NB09I TR belongs to Winbond's DDR3L SDRAM product line, engineered for high-reliability embedded applications demanding low-voltage operation, extended temperature resilience, and JEDEC-compliant interoperability with mainstream memory controllers.

FAQ

What is the maximum data rate supported by W631GU8NB09I TR?

W631GU8NB09I TR supports DDR3L-2133 operation, achieving 2133 MT/s transfer rates. This requires a 1066 MHz differential clock (CK/CK#) with tCK(AVG) ≤ 0.938 ns, validated under industrial temperature conditions (–40°C to +95°C) and 1.35 V supply. The device meets JEDEC JESD79-3F specification for DDR3L-2133 timing (14-14-14).

Does W631GU8NB09I TR support both DDR3L and standard DDR3 voltage levels?

Yes, W631GU8NB09I TR is backward compatible with 1.5 V ± 0.075 V DDR3 operation while fully compliant with DDR3L 1.35 V specifications. Its VDD/VDDQ range spans 1.283 V to 1.45 V (typ. 1.35 V), and it supports seamless voltage switching between DDR3L and DDR3 modes via MR register configuration per JEDEC guidelines.

How does the write leveling function work in W631GU8NB09I TR?

W631GU8NB09I TR implements write leveling per JEDEC DDR3L specification: the memory controller asserts DQS while holding DQ steady, and the DRAM samples CK edges to determine DQS-to-CK phase offset. Calibration results are stored internally and applied to align DQS timing during subsequent writes, ensuring setup/hold compliance at 2133 MT/s.

What package type and ball count does W631GU8NB09I TR use?

W631GU8NB09I TR uses a VFBGA-78 package measuring 8 mm × 10.5 mm with 1.0 mm height and 0.8 mm ball pitch. It features 78 solder balls arranged in a JEDEC-standard DDR3L x8 configuration, including dedicated VDD, VDDQ, VSS, and VSSQ balls for noise isolation and power integrity.

Can W631GU8NB09I TR operate reliably above 85°C ambient temperature?

Yes, W631GU8NB09I TR is rated for –40°C ≤ TCASE ≤ 95°C and maintains full JEDEC AC/DC specifications across that range. Above 85°C, tREFI must be halved to 3.9 µS; this is achieved either by enabling Auto Self-Refresh (ASR) mode (MR2[7:6] = 10b) or entering Manual Self-Refresh with extended temperature capability (MR2[7:6] = 10b, MR2[5] = 0b).