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Winbond Electronics Corporation W631GU8NB-09 TR
- Part No.:
- W631GU8NB-09 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8NB-09 TR.pdf
- Description:
- IC DRAM 1GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,132
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Product details
Overview
W631GU8NB-09 TR from Winbond is a 1Gbit (128MB) DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35V nominal supply with DDR3L-2133 speed grade (14-14-14 CL/tRCD/tRP), supporting CAS Latency 5–14 and programmable CWL up to 10. It delivers 2133 MT/s data rates for memory subsystems in industrial computing, network edge devices, and embedded controllers requiring low-voltage operation and extended temperature support.
For engineers reviewing the W631GU8NB-09 TR datasheet, W631GU8NB-09 TR pinout, W631GU8NB-09 TR application, or W631GU8NB-09 TR equivalent, key selection considerations include its VFBGA-78 package, DDR3L-2133 timing compliance, -40°C to +95°C industrial temperature range, ZQ calibration support, and dynamic ODT configuration for signal integrity in high-speed PCB layouts.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe I/O. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and multi-purpose register (MPR) readout for system-level timing calibration.
Functional features include asynchronous RESET# for power-up initialization, on-die termination (ODT) with synchronous/dynamic modes, write leveling for DQ-DQS skew compensation, and partial array self-refresh (PASR) for selective bank retention. The device complies with JEDEC DDR3L standards and maintains backward compatibility with 1.5V DDR3 systems via voltage-switching capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (128 MB), configured as 16M words × 8 banks × 8 bits |
| Data Rate | 2133 MT/s (DDR3L-2133), tCK = 0.938 ns min (CL14/CWL10) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V; compatible with 1.5 V ±0.075 V DDR3 |
| CAS Latency | Programmable CL = 5, 6, 7, 8, 9, 10, 11, 13, 14; RL = AL + CL |
| CAS Write Latency | Programmable CWL = 5–10, dependent on frequency and CL setting |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C); supports ASR and PASR |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Operating Temp | −40°C ≤ TCASE ≤ +95°C (industrial grade per -09 suffix) |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type ball layout. Ball pitch is 0.8 mm; balls arranged in 6 rows (A–F) × 13 columns (1–13), excluding missing positions per JEDEC MO-270AB standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | VDD | Core power supply (1.283–1.45 V) |
| A2 | VSS | Digital ground reference |
| A3 | CK | Differential clock input (rising edge latches commands) |
| A4 | CK# | Inverted differential clock input |
| A5 | RESET# | Asynchronous active-low reset for initialization sequence |
| B1 | VDDQ | I/O power supply (same as VDD for DDR3L) |
| B2 | VSSQ | I/O ground, isolated from core ground for noise reduction |
| B3 | DQS0 | Differential data strobe for DQ[0:7], source-synchronous read/write alignment |
| B4 | DQS0# | Inverted strobe for DQ[0:7] |
| C1 | ODT | On-die termination control input; enables/disables RTT_NOM/RTT_WR |
| C2 | WE# | Write enable command input (active low) |
| C3 | RAS# | Row address strobe (active low) |
| C4 | CAS# | Column address strobe (active low) |
| D1 | CS# | Chip select (active low; gates command decoding) |
| D2 | A0–A12 | Address inputs (multiplexed row/column; A10 used for auto-precharge) |
| D3 | BA0–BA2 | Bank address inputs selecting one of eight internal banks |
| E1 | DQ0–DQ7 | Bi-directional 8-bit data bus; edge-aligned on reads, center-aligned on writes |
| E2 | DM0 | Data mask for DQ[0:7]; suppresses write data when asserted |
| F1 | ZQ | Reference pin for ZQ calibration of output drivers and ODT impedances |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage DDR3L operation | 1.35 V nominal supply reduces power by ~20% vs. 1.5 V DDR3, critical for thermally constrained industrial designs |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT impedance switching during write bursts to minimize stub reflections and improve eye margin |
| Write leveling support | Calibrates DQ-to-DQS skew per byte lane using MPR pattern, essential for reliable >1600 MT/s interface timing closure |
| ZQ calibration | Uses external 240 Ω ±1% resistor on ZQ pin to trim output driver strength and ODT values across voltage/temperature |
| Multi-Purpose Register (MPR) | Provides predefined bit pattern for system-level read training without disturbing memory contents or requiring valid data |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active banks, extending battery life in portable edge devices |
Applications
| Industrial PLC Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time deterministic control logic execution with local data buffering and firmware update storage. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7/M4-based controller SoCs, interfacing via 16-bit DDR3L bus at 1066 MHz. Use Value: DDR3L-2133 timing headroom ensures stable operation under 85°C ambient with minimal derating, while PASR extends uptime during brownout conditions. |
Use Scenario: Packet buffering and forwarding table storage in fanless Layer 3 switches deployed in telecom cabinets. IC Role / Device Role / Timing Role: High-bandwidth packet buffer supporting 10 GbE line-rate traffic with burst-intensive read-modify-write cycles. Use Value: Dynamic ODT and write leveling maintain signal integrity across 12-layer backplanes with >40 dB crosstalk suppression at 2133 MT/s. |
| Medical Imaging Gateways | Automated Test Equipment (ATE) |
Use Scenario: DICOM image preprocessing pipeline requiring low-latency frame buffering and histogram computation. IC Role / Device Role / Timing Role: Dual-channel memory subsystem component in Xilinx Zynq-7000 MPSoC-based imaging engine. Use Value: Programmable CL/CWL and AL settings allow precise tuning of read/write latency to match FPGA fabric timing constraints. |
Use Scenario: High-precision waveform capture and pattern generation with real-time digital signal analysis. IC Role / Device Role / Timing Role: On-board memory for TI C66x DSP cluster executing FFT and correlation algorithms at 1 GHz. Use Value: VFBGA-78 package enables compact BGA escape routing with <15 ps inter-lane skew, meeting sub-100 ps setup/hold windows. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-2BLI | 16-bit bus width (vs. 8-bit), same 1Gbit density, 2133 MT/s, VFBGA-96 package | Requires wider PCB trace routing and different controller interface mapping; not drop-in compatible | Select when higher bandwidth per chip is needed and controller supports x16 mode |
| MT41K128M8RH-125:E | Micron part with identical 128M×8 organization, DDR3L-1600 (11-11-11), VFBGA-78, but rated only to 90°C | Lacks extended 95°C operation and DDR3L-2133 speed bin; no PASR support | Choose for cost-sensitive designs where 1600 MT/s and 90°C max are sufficient |
Compared with IS43TR16128B-2BLI and MT41K128M8RH-125:E, W631GU8NB-09 TR uniquely combines DDR3L-2133 speed, industrial −40°C to +95°C operation, PASR, and VFBGA-78 in an 8-bit configuration-enabling compact, thermally robust, and future-proof memory subsystems without bus-width or temperature compromises.
Availability
W631GU8NB-09 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and guaranteed extended temperature performance.
Supply support for W631GU8NB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W631GU8NB-09 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-constrained, thermally demanding embedded systems that require JEDEC-compliant low-voltage memory with extended temperature reliability and advanced calibration features.
FAQ
What is the maximum operating frequency supported by W631GU8NB-09 TR?
W631GU8NB-09 TR supports DDR3L-2133 operation with a maximum clock frequency of 1066 MHz (tCK = 0.938 ns minimum), achieving 2133 MT/s data transfer rates. This speed grade is validated under industrial temperature conditions (−40°C to +95°C) and requires CL14/CWL10 timing settings per JEDEC specification.
Does W631GU8NB-09 TR support backward compatibility with standard DDR3 systems?
Yes, W631GU8NB-09 TR supports 1.5 V ±0.075 V operation in addition to its native 1.35 V DDR3L mode. Voltage switching between DDR3L and DDR3 is supported via controlled VDD/VDDQ ramping, allowing seamless integration into legacy 1.5 V memory controllers without hardware modification.
How does the ZQ calibration function work on W631GU8NB-09 TR?
W631GU8NB-09 TR uses the ZQ pin to connect to a 240 Ω ±1% external resistor to ground. During ZQ calibration commands, the device measures this reference to trim internal output driver strength and on-die termination (ODT) impedances across process, voltage, and temperature variations-ensuring consistent signal integrity.
What is the purpose of the Multi-Purpose Register (MPR) in W631GU8NB-09 TR?
The MPR in W631GU8NB-09 TR provides a predefined 128-bit read-only pattern used during system initialization for read training. It allows the memory controller to calibrate DQS-to-DQ timing without accessing actual memory cells or requiring valid data, simplifying high-speed interface setup and improving first-time-right bring-up.
Can W631GU8NB-09 TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, W631GU8NB-09 TR supports PASR via MR2 programming to refresh only selected banks, reducing self-refresh current by up to 50% compared to full-array refresh. This feature is especially valuable in battery-powered or thermally limited applications where power efficiency and thermal management are critical.
W631GU8NB-09 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W631GU8NB-09 TR FAQ
1.How can I place an order for W631GU8NB-09 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8NB-09 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8NB-09 TR reliable?
The price and inventory of W631GU8NB-09 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8NB-09 TR is usually 5 days.
3.What payment methods are accepted for W631GU8NB-09 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8NB-09 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8NB-09 TR?
W631GU8NB-09 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8NB-09 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8NB-09 TR?
For technical support, including W631GU8NB-09 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8NB-09 TR requirements.
6.How does Aetrix verify that W631GU8NB-09 TR is sourced from the original manufacturer or authorized distributors?
All W631GU8NB-09 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8NB-09 TR meets industry standards.
7.What is the process for return or replacement of W631GU8NB-09 TR?
All W631GU8NB-09 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8NB-09 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8NB-09 TR part is unused and in its original packaging.
Return procedure for W631GU8NB-09 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8NB-09 TR Tags
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