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Winbond Electronics Corporation W631GU8NB11I TR
- Part No.:
- W631GU8NB11I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8NB11I TR.pdf
- Description:
- IC DRAM 1GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:970
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Product details
Overview
W631GU8NB11I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with industrial temperature support (–40°C to +95°C), compliant with DDR3L-1866 (13-13-13) timing, and packaged in a 78-ball VFBGA (8 mm × 10.5 mm). It delivers high-speed data transfer up to 1866 MT/s for memory subsystems in embedded controllers, networking equipment, and industrial HMIs.
For engineers reviewing the W631GU8NB11I TR datasheet, W631GU8NB11I TR pinout, W631GU8NB11I TR application, or W631GU8NB11I TR equivalent, this page provides verified DDR3L timing parameters, industrial-grade thermal validation, ZQ calibration support, on-die termination configuration, and mode register programming details essential for stable memory interface design and JEDEC-compliant layout implementation.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O synchronized to CK/CK#. It supports programmable CAS Latency (CL = 5–13), additive latency (AL = 0, CL−1, CL−2), and CAS Write Latency (CWL = 5–9) per speed bin.
The device features asynchronous RESET# for power-up initialization, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-to-DQS skew compensation, and dynamic ODT (Rtt_WR) with selectable termination impedances during write operations. All command/address inputs are sampled on the rising edge of CK, while data is double-data-rate referenced to DQS edges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (16M × 8 banks × 8 bits) |
| Interface Standard | JEDEC-compliant DDR3L SDRAM, backward compatible with 1.5 V DDR3 |
| Speed Grade | DDR3L-1866 (13-13-13), fCKMAX = 933 MHz |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); supports 1.5 V ± 0.075 V operation |
| Operating Temperature | –40°C ≤ TCASE ≤ +95°C (industrial grade) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free) |
| Refresh Interval | tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) with ASR or Manual Self-Refresh enabled |
| Key Timing Parameters | tAA = 13.91 ns, tRCD = 13.91 ns, tRP = 13.91 ns, tRC = 47.91 ns |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm thickness) with ball pitch of 0.8 mm; RoHS-compliant, lead-free construction. Ball map conforms to JEDEC MO-270DA standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bits for bank and memory location selection; A10 controls auto-precharge |
| BA0–BA2 | Bank Address Inputs | Select one of eight internal banks for concurrent operation |
| CK / CK# | Differential Clock Inputs | Edge-triggered command/address sampling; all inputs latched at CK rising / CK# falling crossing point |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; double-data-rate transfers synchronized to DQS/DQS# |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe: center-aligned with write data, edge-aligned with read data |
| DM | Data Mask Input | Per-byte write mask; active-high to suppress corresponding DQ byte during write bursts |
| RESET# | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and functional reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of termination resistors on DQ, DM, DQS/DQS# pins per MR1/MR2 settings |
| WE#, RAS#, CAS# | Command Control Inputs | Standard DDR3 command encoding via combination with CS# and CKE |
| VDD / VDDQ | Power Supplies | VDD powers core logic; VDDQ powers I/O; both operate at same voltage (1.283–1.45 V) |
| VSS | Ground | Common reference for all signals and supplies; multiple balls ensure low-inductance return path |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1 % resistor to ground for output driver and ODT impedance calibration |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5–9, enabling precise write timing alignment across DDR3L-1333 to DDR3L-1866 speeds |
| ZQ Calibration | On-chip calibration using external 240 Ω resistor ensures consistent output driver strength and ODT impedance over voltage/temperature |
| Dynamic ODT (Rtt_WR) | Configurable termination during writes only, improving signal integrity without affecting read eye margins |
| Multi-Purpose Register (MPR) | Predefined bit pattern (0x00000000) readable via MRS for system-level timing calibration and DQ-to-DQS deskew verification |
| Write Leveling Support | Enables controller-driven DQS delay adjustment to compensate for board-level skew between DQ and DQS paths |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks, extending battery life in portable industrial devices |
Applications
| Industrial HMI Systems | Network Edge Routers |
|---|---|
Use Scenario: Touch-enabled operator interfaces in factory automation panels requiring reliable memory operation under wide ambient temperature swings. IC Role / Device Role / Timing Role: Primary working memory for ARM-based SoC running real-time Linux, interfacing via 16-bit DDR3L bus with strict tRCD/tRP timing compliance. Use Value: Industrial temperature rating (–40°C to +95°C) and DDR3L-1866 bandwidth ensure deterministic UI responsiveness and long-term reliability without thermal throttling. |
Use Scenario: Packet buffering and forwarding tables in compact Layer 3 switches deployed in uncontrolled telecom cabinets. IC Role / Device Role / Timing Role: High-throughput data buffer supporting simultaneous ingress/egress traffic streams; operates in bank-interleaved mode to sustain >1.4 GB/s aggregate bandwidth. Use Value: Dynamic ODT and write leveling minimize signal integrity issues on dense PCB layouts, reducing bit error rates in multi-gigabit Ethernet backplanes. |
| Medical Imaging Controllers | Automated Test Equipment (ATE) |
Use Scenario: Real-time image acquisition and preprocessing in portable ultrasound systems where power efficiency and thermal stability are critical. IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-accelerated image pipeline; leverages PASR to cut self-refresh current during idle scan intervals. Use Value: 1.35 V DDR3L operation reduces power consumption by ~20% vs. 1.5 V DDR3, extending battery runtime while maintaining full DDR3L-1866 performance. |
Use Scenario: High-speed digital pattern memory in semiconductor test handlers requiring deterministic read/write latency and minimal jitter. IC Role / Device Role / Timing Role: Timing-critical storage for test vectors and expected responses; uses posted CAS with AL=1 to decouple command bus occupancy from data availability. Use Value: Programmable CL/CWL and tight tAA = 13.91 ns guarantee sub-14 ns read access time, enabling nanosecond-precision stimulus/response sequencing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E (Micron) | Same density, 78-ball VFBGA, DDR3L-1866, but rated –40°C to +90°C (not +95°C); requires different ZQ resistor tolerance (±0.5% vs. ±1%) | Limited to 90°C case temperature; lacks PASR support; no MPR pattern for calibration | Choose if operating below 90°C and ZQ calibration infrastructure already supports tighter tolerance |
| IS43TR16128B-125KBL (ISSI) | 16-bit bus width (vs. 8-bit), 96-ball VFBGA, DDR3L-1866, –40°C to +95°C; supports same CWL/CL ranges but no write leveling | Requires PCB redesign (wider bus, different footprint); higher bandwidth but no DQS deskew capability | Choose only when 16-bit interface and higher aggregate throughput outweigh layout change cost |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GU8NB11I TR uniquely combines industrial +95°C operation, write leveling, MPR-based calibration, and PASR in an 8-bit DDR3L-1866 device - making it optimal for thermally constrained, layout-sensitive embedded designs requiring JEDEC-compliant signal integrity tuning.
Availability
W631GU8NB11I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GU8NB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W631GU8NB11I TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant signal integrity features like write leveling and dynamic ODT.
FAQ
What is the maximum operating frequency supported by W631GU8NB11I TR?
W631GU8NB11I TR supports DDR3L-1866 operation with a maximum clock frequency of 933 MHz (tCK = 1.071 ns), validated across the full industrial temperature range (–40°C to +95°C). This corresponds to a data transfer rate of 1866 MT/s, as confirmed in the device's speed bin specification and AC timing tables for the -11I grade.
Does W631GU8NB11I TR support backward compatibility with standard 1.5 V DDR3 systems?
Yes, W631GU8NB11I TR is fully backward compatible with 1.5 V DDR3 systems. It accepts VDD/VDDQ = 1.5 V ± 0.075 V and maintains functional and timing compliance with JEDEC DDR3 standards when operated at that voltage, as explicitly stated in Section 11 of the datasheet and validated in DC operating condition tables.
How does the ZQ calibration function work on W631GU8NB11I TR?
W631GU8NB11I TR performs ZQ calibration by referencing an external 240 Ω ±1 % resistor connected between the ZQ pin and VSS. During calibration commands, the device adjusts its output driver strength and on-die termination (ODT) impedances to match this reference, ensuring consistent signal integrity across voltage and temperature variations per JEDEC DDR3L requirements.
What is the purpose of the Multi-Purpose Register (MPR) in W631GU8NB11I TR?
The MPR in W631GU8NB11I TR stores a fixed 8-bit pattern (0x00) accessible via a dedicated read command. It enables system-level timing calibration - particularly for verifying DQ-to-DQS alignment during write leveling - by providing a known, noise-immune reference sequence that eliminates dependency on stored data patterns.
Can W631GU8NB11I TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, W631GU8NB11I TR supports PASR via Mode Register 2 (MR2) configuration. This feature allows selective self-refresh of only active memory banks, reducing IDD6 current by up to 50% compared to full-array refresh - a key advantage for battery-powered or thermally constrained industrial applications.
W631GU8NB11I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W631GU8NB11I TR FAQ
1.How can I place an order for W631GU8NB11I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8NB11I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8NB11I TR reliable?
The price and inventory of W631GU8NB11I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8NB11I TR is usually 5 days.
3.What payment methods are accepted for W631GU8NB11I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8NB11I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8NB11I TR?
W631GU8NB11I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8NB11I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8NB11I TR?
For technical support, including W631GU8NB11I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8NB11I TR requirements.
6.How does Aetrix verify that W631GU8NB11I TR is sourced from the original manufacturer or authorized distributors?
All W631GU8NB11I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8NB11I TR meets industry standards.
7.What is the process for return or replacement of W631GU8NB11I TR?
All W631GU8NB11I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8NB11I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8NB11I TR part is unused and in its original packaging.
Return procedure for W631GU8NB11I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8NB11I TR Tags
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