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Winbond Electronics Corporation W631GU8NB12I TR
- Part No.:
- W631GU8NB12I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8NB12I TR.pdf
- Description:
- IC DRAM 1GBIT 78-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,980
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Product details
Overview
W631GU8NB12I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35V nominal supply with DDR3L-1600 (11-11-11) speed grade, supporting -40°C to +95°C industrial temperature range and featuring programmable CAS latency (CL = 5–11), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for reliable memory subsystems in embedded controllers and networking equipment.
For engineers reviewing the W631GU8NB12I TR datasheet, W631GU8NB12I TR pinout, W631GU8NB12I TR application, or W631GU8NB12I TR equivalent, this device requires attention to tRCD/tRP timing (13.75 ns min), VDD/VDDQ voltage tolerance (1.283–1.45 V), differential CK/CK# and DQS/DQS# interface alignment, and MR2-controlled PASR/ASR modes for thermal-aware power management.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-synchronized DQ/DQS timing, and source-synchronous data transfer referenced to differential strobes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.
Functional operation relies on JEDEC-compliant command decoding synchronized to CK rising edge, including ACTIVE, READ, WRITE, PRECHARGE, REFRESH, and MODE REGISTER SET (MRS). Power management includes Precharged Power Down, Active Power Down, Self-Refresh, and Auto Self-Refresh (ASR) with temperature-triggered refresh rate doubling above 85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16M × 8 banks × 8 bits), enabling 128 MB byte-addressable capacity |
| Data Rate | DDR3L-1600 (800 MHz clock, 1600 MT/s), requiring tCK(AVG) ≤ 2.5 ns for CL=6/CWL=5 |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical), compatible with 1.5 V DDR3 systems via voltage switching |
| CAS Latency | Programmable CL = 5, 6, 7, 8, 9, 10, 11 - determines minimum tAA (13.75 ns min at DDR3L-1600) |
| tRCD / tRP | 13.75 ns minimum (11 clock cycles @ 800 MHz), defining ACT-to-READ/WRITE and PRE timing constraints |
| Operating Temp | -40°C to +95°C case temperature, with mandatory ASR or Manual Self-Refresh above 85°C |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height), RoHS-compliant lead-free construction |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with 78 solder balls arranged in 8×10 array plus 2 dummy balls (B1, H10), RoHS-compliant, lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bits; A10 controls auto-precharge; A12/A13 select bank group (BG0/BG1) |
| BA0–BA2 | Bank Address | Selects one of eight internal banks (0–7); BA2 enables bank group addressing in x16 mode |
| CK / CK# | Differential Clock | Edge-aligned input pair; all commands latched at CK rising / CK# falling crossing point |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; referenced to DQS/DQS# for read/write strobe alignment |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe: center-aligned with write data, edge-aligned with read data |
| DM | Data Mask | Per-byte mask for WRITE operations; active-high, sampled on DQS rising edge |
| RESET# | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and functional reset |
| ODT | On-Die Termination Control | Dynamic ODT enable; selects RTT_NOM/RTT_WR values per MR1/MR2 configuration |
| WE#, RAS#, CAS# | Command Inputs | Standard SDRAM command pins; decoded with A0–A13/BA0–BA2 on CK rising edge |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | One-time or periodic output driver and ODT impedance tuning using external 240 Ω ±1 % resistor to ground |
| Dynamic ODT (Rtt_WR) | Programmable write-time termination (240 Ω, 120 Ω, 80 Ω, 60 Ω) activated during WRITE bursts only |
| Multi-Purpose Register (MPR) | Predefined 128-bit calibration pattern for system-level timing margin validation and write leveling setup |
| Write Leveling | PHY-assisted DQS delay adjustment per byte lane to compensate for board skew and ensure tDQSS compliance |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only selected banks (1/2/4/8), configurable via MR2 A0–A2 |
Applications
| Industrial PLC Controllers | Network Switch Buffers |
|---|---|
Use Scenario: Real-time deterministic control logic execution with multi-task scheduling and fieldbus protocol stacks. IC Role / Device Role / Timing Role: Main program/data memory interfaced to ARM Cortex-M7 or RISC-V SoC via 8-bit DDR3L bus with strict tRCD/tRP timing. Use Value: Industrial temperature rating (-40°C to +95°C) and ASR support ensure uninterrupted operation during ambient thermal cycling without host intervention. |
Use Scenario: Packet buffering in Layer 2/L3 Ethernet switches handling 1 GbE/2.5 GbE line rates with deep queueing requirements. IC Role / Device Role / Timing Role: High-bandwidth packet buffer with burst-optimized BL8 reads/writes and dynamic ODT for signal integrity across multi-drop PCB traces. Use Value: DDR3L-1600 data rate (1600 MT/s) and 1K-byte page size enable >1.2 GB/s sustained throughput under mixed read/write workloads. |
| Medical Imaging Edge Devices | Automotive ADAS Domain Controllers |
Use Scenario: Local image preprocessing (noise reduction, histogram equalization) in portable ultrasound or X-ray units before cloud upload. IC Role / Device Role / Timing Role: Frame buffer and algorithm working memory for FPGA-accelerated pipelines with low-latency random access patterns. Use Value: Programmable CAS latency (CL=5–11) and additive latency allow fine-grained trade-off between access latency and command bus efficiency in burst-limited contexts. |
Use Scenario: Sensor fusion processing in centralized ADAS ECUs integrating radar, camera, and ultrasonic inputs with ISO 26262 ASIL-B software. IC Role / Device Role / Timing Role: Safety-critical data storage for real-time object tracking buffers and neural network inference scratchpad memory. Use Value: Asynchronous RESET# and robust power-down modes (Precharged/Active Power Down) support fail-safe state retention and rapid recovery after voltage droop events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-125KBL | 16-bit bus width, 2 G-bit density, same DDR3L-1600 speed grade and -40°C to +95°C rating; requires PCB redesign for x16 vs x8 interface | Targeted at higher-throughput SoCs with native x16 memory controllers (e.g., NXP i.MX8M Plus), not drop-in for x8 designs | Select when bandwidth demand exceeds 1.6 GB/s and controller supports x16; verify tAC/tDQSS margins with new layout |
| MT41K128M8RH-125:E | Micron part with identical 128M × 8 organization, DDR3L-1600, VFBGA-78, and -40°C to +95°C rating; differs in MR2 bit definitions for PASR and ASR enablement | Same footprint and electrical interface, but requires MR register reconfiguration for thermal refresh behavior and ODT timing | Valid pin-compatible alternative if firmware validates JEDEC MR2 A6/A7 settings for extended temperature operation |
Compared with IS43TR16128B-125KBL and MT41K128M8RH-125:E, W631GU8NB12I TR offers native x8 bus alignment for cost-sensitive controllers, simpler MR2 configuration for ASR activation, and tighter tRCD/tRP consistency across industrial temperature range - making it optimal for space-constrained, thermally variable embedded systems where layout reuse and firmware portability matter.
Availability
W631GU8NB12I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical edge devices requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.
Supply support for W631GU8NB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and mobile RAM, with global manufacturing and quality certifications.
W631GU8NB12I TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant interoperability with mainstream memory controllers.
FAQ
What is the maximum supported CAS latency for W631GU8NB12I TR at DDR3L-1600 speed?
W631GU8NB12I TR supports CAS latency (CL) settings of 5, 6, 7, 8, 9, 10, and 11 at DDR3L-1600 speed grade. CL=11 corresponds to a minimum tAA of 13.75 ns (11 clock cycles at 800 MHz), and is validated across the full -40°C to +95°C operating range per JEDEC specification.
Does W631GU8NB12I TR support backward compatibility with standard 1.5 V DDR3 systems?
Yes, W631GU8NB12I TR supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L mode) and is backward compatible with 1.5 V ±0.075 V DDR3 systems. Voltage switching between modes is controlled via VDD/VDDQ supply rails and requires MR register reinitialization per JEDEC spec.
How does the ZQ calibration function in W631GU8NB12I TR, and what external component is required?
W631GU8NB12I TR performs ZQ calibration to tune output driver strength and on-die termination (ODT) impedance using an external 240 Ω ±1 % precision resistor connected from ZQ pin to ground. Calibration occurs at power-up, after MRS, and optionally during runtime to maintain signal integrity across voltage/temperature drift.
What power-down modes are available in W631GU8NB12I TR, and how do they differ?
W631GU8NB12I TR supports Precharged Power Down (low current, all banks precharged), Active Power Down (retains row activation state), and Self-Refresh (ultra-low IDD6 ≤10 mA). Entry/exit is controlled by CKE gating, with ASR extending refresh rate at high temperature to maintain data retention without host intervention.
Is W631GU8NB12I TR pin-compatible with other Winbond DDR3L SDRAMs in the same VFBGA-78 package?
W631GU8NB12I TR shares the same VFBGA-78 mechanical footprint and ball assignment with Winbond's W631GU8NB family (e.g., -09I, -11J, -15I variants), ensuring PCB layout reuse. However, speed bin and temperature grade differences require validation of timing parameters (tRCD, tRP, tRC) and MR register settings for each specific variant.
W631GU8NB12I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- -
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W631GU8NB12I TR FAQ
1.How can I place an order for W631GU8NB12I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8NB12I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8NB12I TR reliable?
The price and inventory of W631GU8NB12I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8NB12I TR is usually 5 days.
3.What payment methods are accepted for W631GU8NB12I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8NB12I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8NB12I TR?
W631GU8NB12I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8NB12I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8NB12I TR?
For technical support, including W631GU8NB12I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8NB12I TR requirements.
6.How does Aetrix verify that W631GU8NB12I TR is sourced from the original manufacturer or authorized distributors?
All W631GU8NB12I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8NB12I TR meets industry standards.
7.What is the process for return or replacement of W631GU8NB12I TR?
All W631GU8NB12I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8NB12I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8NB12I TR part is unused and in its original packaging.
Return procedure for W631GU8NB12I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8NB12I TR Tags
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