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Winbond Electronics Corporation W631GU8NB-12 TR
- Part No.:
- W631GU8NB-12 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GU8NB-12 TR.pdf
- Description:
- IC DRAM 1GBIT 78-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,489
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Product details
Overview
W631GU8NB-12 TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) speed grade, supporting CAS Latency 5–11 and CWL 5–8, used in embedded computing and industrial control systems requiring low-voltage memory with extended temperature operation up to 95°C.
For engineers reviewing the W631GU8NB-12 TR datasheet, W631GU8NB-12 TR pinout, W631GU8NB-12 TR application, or W631GU8NB-12 TR equivalent, this page delivers verified electrical specs, ball configuration, ODT and ZQ calibration behavior, write leveling support, and JEDEC-compliant timing for DDR3L-1600 system integration.
Technical Context
This device implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes aligned edge-to-read and center-to-write data. It supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, and auto-precharge for burst operations.
W631GU8NB-12 TR integrates on-die termination (ODT) with synchronous and dynamic modes, ZQ calibration using external 240 Ω resistor, multi-purpose register (MPR) for timing calibration pattern readout, and asynchronous RESET# for power-up initialization - all compliant with JEDEC DDR3L standard JESD79-3F.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (128 MByte), configured as 16,777,216 words × 8 banks × 8 bits |
| Speed Grade | DDR3L-1600 (11-11-11), fCKMAX = 800 MHz, tCK(AVG) = 1.875–2.5 ns |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ±0.075 V |
| CAS Latency (CL) | Programmable CL = 5, 6, 7, 8, 9, 10, 11 - determines minimum read access time in clock cycles |
| CAS Write Latency (CWL) | Programmable CWL = 5, 6, 7, 8 - sets write command-to-data timing offset per frequency bin |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (commercial/industrial range, no derating required) |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; 3.9 µs at 85–95°C (doubled refresh rate) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free) |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type BGA construction. Ball pitch is 0.8 mm; balls are arranged in 9 rows (A–J) × 9 columns (1–9), with corner balls A1, A9, J1, J9 omitted.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1–A9 (omitted) | N/C | No connection - mechanical corner relief, not electrically assigned |
| B1–B9 | VDD, VSS, A[12:0], BA[2:0] | Power, ground, row/column address inputs, bank address inputs |
| C1–C9 | DQ[7:0], DQS, DQS#, DM, VDDQ, VSSQ | 8-bit bidirectional data, differential strobe pair, data mask, I/O power/ground |
| D1–D9 | CK, CK#, CKE, CS#, RAS#, CAS#, WE#, RESET#, VDD, VSS | Differential clock, command enable, chip select, row/column/write enables, asynchronous reset |
| E1–E9 | ODT, VDD, VSS, NC | On-die termination control, power/ground, reserved balls |
| F1–F9 | ZQ, VDD, VSS, VDDQ, VSSQ | ZQ calibration reference terminal, power/ground distribution for core and I/O |
| G1–G9 | VDD, VSS, A[12:0], BA[2:0] | Redundant address/bank inputs and power delivery for signal integrity |
| H1–H9 | DQ[7:0], DQS, DQS#, DM, VDDQ, VSSQ | Second data byte lane with full strobe/mask/power support |
| J1–J9 (omitted) | N/C | No connection - mechanical corner relief, not electrically assigned |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic ODT (Rtt_WR) | Enables on-the-fly termination impedance switching during write bursts to reduce stub reflections and improve eye margin |
| ZQ Calibration | Uses external 240 Ω ±1 % resistor to calibrate output driver strength and ODT values across voltage/temperature |
| Write Leveling | Allows controller to adjust DQS launch delay relative to CK to compensate for board skew in high-speed write setup |
| Multi-Purpose Register (MPR) | Provides predefined 128-bit calibration pattern for system-level timing margin validation without accessing memory array |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - cuts IDD6 by up to 40 % in partial-bank workloads |
| Asynchronous RESET# | Permits deterministic initialization after power ramp without waiting for stable clocks - critical for cold-start reliability |
Applications
| Industrial HMI Panel | Network Edge Router |
|---|---|
|
Use Scenario: Touch-enabled operator interface with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Main system memory buffering display frame buffers, UI assets, and firmware execution stack. Use Value: DDR3L-1600 bandwidth meets 60 Hz HD video overlay requirements while 1.35 V operation reduces thermal load in sealed enclosures. |
Use Scenario: Compact Layer 3 switch handling packet buffering, ACL table storage, and management stack. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by ingress/egress engines and CPU subsystem. Use Value: Eight-bank concurrency enables simultaneous packet enqueue/dequeue and control-plane lookups without bank conflict stalls. |
| Medical Diagnostic Imaging Module | Automated Test Equipment (ATE) |
|
Use Scenario: Portable ultrasound unit acquiring and preprocessing RF echo streams before transfer to host PC. IC Role / Device Role / Timing Role: High-throughput acquisition buffer synchronized to ADC sampling clock via write leveling calibration. Use Value: Programmable CWL and AL allow precise alignment of write data capture windows across temperature drift (0–45°C ambient). |
Use Scenario: Modular PXI chassis performing high-speed digital pattern generation and response capture. IC Role / Device Role / Timing Role: Deep-pattern storage for stimulus sequences and result capture buffers with deterministic latency. Use Value: 11-11-11 timing and 800 MHz clock support deliver 1.6 GB/s sustained bandwidth needed for 100+ MHz digital I/O vector rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E (Micron) | Same density, VFBGA-78, DDR3L-1600; supports CL=11 but requires tREFI = 3.9 µS above 85°C (no extended 95°C rating) | Lacks industrial-grade 95°C case rating; requires manual refresh rate adjustment above 85°C | Prefer W631GU8NB-12 TR when operating continuously at 95°C without firmware intervention |
| IS43TR16128B-125KBL (ISSI) | 16-bit bus width (x16), same speed grade; different ballout (VFBGA-96), incompatible pin mapping | Requires PCB redesign due to wider data bus and larger package; not drop-in replaceable | Select W631GU8NB-12 TR for existing x8 designs targeting minimal layout change and 95°C operation |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GU8NB-12 TR uniquely combines x8 interface, VFBGA-78 compatibility, guaranteed 95°C case operation without refresh mode changes, and native support for PASR and write leveling - making it optimal for thermally constrained industrial controllers.
Availability
W631GU8NB-12 TR is available at Aetrix Electronics and suitable for industrial HMI panels, network edge routers, medical imaging modules, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GU8NB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W631GU8NB-12 TR belongs to Winbond's DDR3L SDRAM product line, engineered for low-power, high-reliability embedded systems where extended temperature operation and JEDEC compliance are mandatory.
FAQ
What is the maximum operating frequency supported by W631GU8NB-12 TR?
W631GU8NB-12 TR supports DDR3L-1600 operation with a maximum clock frequency of 800 MHz (1600 MT/s data rate). This is validated under JEDEC conditions with tCK(AVG) = 1.875–2.5 ns and CL/CWL settings matching the -12 speed bin. The device maintains full AC/DC specifications across its rated 0°C to 95°C case temperature range without derating.
Does W631GU8NB-12 TR support both 1.35 V and 1.5 V operation?
Yes, W631GU8NB-12 TR is fully backward compatible with standard DDR3 1.5 V operation (VDD/VDDQ = 1.5 V ±0.075 V) while natively designed for DDR3L 1.35 V (1.283–1.45 V). Voltage switching between modes is supported per Section 11.4 of the datasheet, enabling seamless migration from legacy DDR3 platforms without hardware modification.
How does the ZQ calibration function work on W631GU8NB-12 TR?
W631GU8NB-12 TR uses an external 240 Ω ±1 % precision resistor connected to the ZQ pin to calibrate internal output driver impedance and on-die termination (ODT) values. Calibration occurs automatically at power-up and can be triggered manually via ZQCL or ZQCS commands. This ensures consistent signal integrity across voltage and temperature variations without requiring controller-side compensation.
Can W631GU8NB-12 TR operate reliably at 95°C case temperature?
Yes, W631GU8NB-12 TR is explicitly rated for 0°C ≤ TCASE ≤ 95°C with full JEDEC AC/DC specifications met - unlike many DDR3L parts limited to 85°C. At 95°C, it mandates doubled refresh rate (tREFI = 3.9 µS), achievable via Auto Self-Refresh (ASR) or Manual Self-Refresh with MR2 bit A7 = 1, both supported in the device.
What is the purpose of the Multi-Purpose Register (MPR) in W631GU8NB-12 TR?
The MPR in W631GU8NB-12 TR provides a fixed 128-bit calibration pattern readable via standard READ commands. It enables system-level timing margin testing - such as DQ-DQS eye width measurement - without disturbing actual memory contents. This is essential for production validation and field diagnostics of high-speed DDR interfaces.
W631GU8NB-12 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- -
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W631GU8NB-12 TR FAQ
1.How can I place an order for W631GU8NB-12 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GU8NB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GU8NB-12 TR reliable?
The price and inventory of W631GU8NB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8NB-12 TR is usually 5 days.
3.What payment methods are accepted for W631GU8NB-12 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8NB-12 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GU8NB-12 TR?
W631GU8NB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GU8NB-12 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GU8NB-12 TR?
For technical support, including W631GU8NB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8NB-12 TR requirements.
6.How does Aetrix verify that W631GU8NB-12 TR is sourced from the original manufacturer or authorized distributors?
All W631GU8NB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8NB-12 TR meets industry standards.
7.What is the process for return or replacement of W631GU8NB-12 TR?
All W631GU8NB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8NB-12 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GU8NB-12 TR part is unused and in its original packaging.
Return procedure for W631GU8NB-12 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GU8NB-12 TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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M24C02-FMC6TG
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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