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Winbond Electronics Corporation W631GU8NB15I TR

Part No.:
W631GU8NB15I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-VFBGA
Datasheet:
AetrixW631GU8NB15I TR.pdf
Description:
IC DRAM 1GBIT PAR 78VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,000

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Product details

Overview

W631GU8NB15I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1333 MT/s (DDR3L-1333, CL=9), with 1.35 V nominal supply, industrial temperature range (−40°C to +95°C), and VFBGA-78 (8 mm × 10.5 mm) packaging. It serves as main memory in embedded controllers, industrial HMIs, and network edge devices requiring low-voltage, high-reliability DRAM.

For engineers reviewing the W631GU8NB15I TR datasheet, W631GU8NB15I TR pinout, W631GU8NB15I TR application, or W631GU8NB15I TR equivalent, this page delivers verified timing parameters (tRCD = 13.5 ns, tRP = 13.5 ns), ODT configuration options, ZQ calibration support, and industrial-grade thermal behavior - all confirmed for the exact -15I speed grade and TR tape-and-reel packaging.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access and interleaved burst operations. It supports programmable CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and on-die termination (ODT) with synchronous and dynamic modes.

The device uses differential clock inputs (CK/CK#) and bidirectional DQS/DQS# strobes aligned to data edges during reads and centers during writes. DLL alignment ensures precise DQ–DQS timing, while asynchronous RESET# enables deterministic power-up initialization and runtime reset independent of clock state.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 1 G-bit (128 MByte), organized as 16M words × 8 banks × 8 bits
Data Rate 1333 MT/s (DDR3L-1333), supported by tCK(AVG) ≤ 1.5 ns at CL=9/CWL=7
Supply Voltage VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible to 1.5 V ± 0.075 V
Operating Temperature −40°C ≤ TCASE ≤ 95°C (industrial grade, validated per JEDEC JESD209-3B)
Timing Parameters tRCD = tRP = 13.5 ns (min), tRC = 49.5 ns (min), tRAS = 36 ns (min) at DDR3L-1333
Refresh Interval tREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) with ASR or Manual Self-Refresh enabled
Package VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height), RoHS-compliant, lead-free

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm profile, and ball pitch of 0.8 mm. Ball map conforms to JEDEC MO-270DA standard for DDR3L SDRAM.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Inputs Row/column address bits; A10 used for auto-precharge control
BA0–BA2 Bank Address Inputs Select one of eight internal banks for command targeting
CK / CK# Differential Clock Inputs Edge-triggered command latching at crosspoint; defines system timing reference
CS# Chip Select Active-low enable for command decoding; deassertion halts internal operation
RAS#, CAS#, WE# Command Control Standard row/column/write-enable strobes; decoded with address and BA to generate ACT, READ, WRITE, PRE, REF
DQ0–DQ7 Data I/O Bidirectional 8-bit data bus; synchronized to DQS/DQS# with source-synchronous timing
DQS / DQS# Differential Data Strobe Read: edge-aligned with DQ; write: center-aligned with DQ; used for timing capture and write leveling
DM Data Mask Per-byte mask for write operations; suppresses DQ output during masked bursts
RESET# Asynchronous Reset Hardware-initiated initialization sequence; resets mode registers and DLL without clock dependency
ODT On-Die Termination Control Dynamic impedance selection (RTT_NOM = 75 Ω, 150 Ω, 50 Ω, 60 Ω, 120 Ω) for signal integrity optimization
ZQ ZQ Calibration Reference Connects to external 240 Ω ±1 % resistor to ground for output driver and ODT calibration

Key Features

Feature Design Value
Programmable CAS Write Latency (CWL) CWL = 5–7 selectable per frequency bin; enables optimal write timing alignment at DDR3L-1333 (tCK ≤ 1.5 ns)
Dynamic On-Die Termination (Rtt_WR) Configurable RTT values (75 Ω, 150 Ω, etc.) active only during write cycles, reducing standby power vs. static ODT
ZQ Calibration One-time or periodic calibration using external 240 Ω resistor; compensates for voltage/temperature drift in output drivers and ODT
Write Leveling Support Hardware-assisted DQS delay adjustment via MRS; corrects board-level skew between CK and DQS for reliable write capture
Multi-Purpose Register (MPR) Predefined 128-bit pattern readout for system-level timing margin validation and calibration verification

Applications

Industrial HMI Systems Network Edge Routers

Use Scenario: Touch-enabled operator interface with real-time graphics rendering and local data logging.

IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A9/A15-based SoC, buffering UI frame buffers and application code.

Use Value: DDR3L-1333 bandwidth (10.6 GB/s peak) sustains 720p video overlay; −40°C to +95°C rating ensures uptime in uncontrolled cabinet environments.

Use Scenario: Layer-3 packet forwarding engine in compact enterprise switches with integrated CPU and packet buffer.

IC Role / Device Role / Timing Role: Shared memory for packet descriptor tables and temporary payload storage between MAC and CPU subsystems.

Use Value: Low-voltage 1.35 V operation reduces thermal load in dense PCB layouts; dynamic ODT minimizes signal reflections on multi-drop DQ buses.

Medical Diagnostic Terminals Smart Energy Gateways

Use Scenario: Portable ultrasound display unit requiring deterministic memory access for real-time image reconstruction.

IC Role / Device Role / Timing Role: Frame buffer and algorithm scratchpad memory for FPGA-accelerated beamforming pipelines.

Use Value: Programmable CL/CWL and AL settings allow fine-tuned latency tuning to match FPGA clock domain boundaries; ASR mode extends self-refresh hold time during battery backup.

Use Scenario: DIN-rail mounted gateway aggregating smart meter data over RS-485 and forwarding via LTE/Wi-Fi.

IC Role / Device Role / Timing Role: Runtime memory for Linux OS, protocol stacks, and encrypted firmware update staging area.

Use Value: Industrial temperature grade eliminates need for forced cooling; ZQ calibration maintains signal integrity across wide ambient swings (−40°C to +85°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS43TR16128BL-15KLI 16-bit bus width (vs. 8-bit), same DDR3L-1333 speed grade and −40°C to +95°C rating; requires PCB layout change for wider data path Suitable for SoCs with 16-bit memory interfaces (e.g., i.MX6ULL); not drop-in for 8-bit designs Select when migrating to higher-bandwidth SoCs or consolidating memory count; verify address mapping and burst length compatibility.
MT41K128M8RH-15EIT:E Micron part with identical 128M × 8 organization, DDR3L-1333, and industrial temp; differs in ODT truth table and ZQ calibration timing (tZQCAL = 512 tCK vs. 256 tCK) Valid for legacy designs already qualified with Micron DDR3L; may require minor MR2/MR3 reprogramming for PASR and ASR behavior Use for second-source assurance where Micron qualification exists; validate ZQ startup sequence and refresh extension logic.

Compared with W631GU8NB15I TR, IS43TR16128BL-15KLI doubles data width but increases layout complexity, while MT41K128M8RH-15EIT:E offers identical density and speed but demands verification of ODT activation timing and thermal refresh handling - making W631GU8NB15I TR optimal for cost-sensitive, space-constrained 8-bit DDR3L implementations.

Availability

W631GU8NB15I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, and medical diagnostic terminals requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for W631GU8NB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GU8NB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant reliability in harsh environments.

FAQ

What is the maximum operating frequency supported by W631GU8NB15I TR?

W631GU8NB15I TR supports DDR3L-1333 operation at 667 MHz clock frequency (1333 MT/s data rate), with tCK(AVG) ≤ 1.5 ns. This is validated for CL=9 and CWL=7 under industrial temperature conditions (−40°C to +95°C) and 1.35 V supply. Higher bins (e.g., -12/-11) are not rated for this part number.

Does W631GU8NB15I TR support backward compatibility with standard 1.5 V DDR3 systems?

Yes, W631GU8NB15I TR is fully backward compatible with 1.5 V DDR3 systems. It accepts VDD/VDDQ = 1.5 V ± 0.075 V and maintains functional compliance with JEDEC DDR3 standards, including command encoding, timing, and electrical interface - enabling seamless integration into legacy 1.5 V platforms without redesign.

How is on-die termination (ODT) configured on W631GU8NB15I TR?

ODT on W631GU8NB15I TR is configured via Mode Registers MR1 and MR2. MR1 sets nominal termination (RTT_NOM) values (75 Ω, 150 Ω, 50 Ω, etc.), while MR2 enables dynamic ODT (Rtt_WR) during writes. The ODT state is controlled by the ODT pin and can be activated synchronously or asynchronously depending on power mode and register settings.

What is the purpose of the ZQ pin on W631GU8NB15I TR, and what external component is required?

The ZQ pin on W631GU8NB15I TR connects to an external 240 Ω ±1 % precision resistor to ground, enabling factory and runtime calibration of output driver strength and ODT impedance. This calibration compensates for process, voltage, and temperature variations, ensuring consistent signal integrity across operating conditions.

Can W631GU8NB15I TR operate in Auto Self-Refresh (ASR) mode, and under what conditions is it required?

Yes, W631GU8NB15I TR supports ASR mode, which is mandatory when operating above 85°C (up to +95°C). At elevated temperatures, tREFI must be reduced from 7.8 µs to 3.9 µs, and ASR (enabled via MR2[7:6] = 10b) automatically doubles refresh rate without host intervention - critical for thermal reliability in sealed industrial enclosures.

W631GU8NB15I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
1Gbit
Memory Organization:
128M x 8
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V, 1.425V ~ 1.575V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-VFBGA (8x10.5)

W631GU8NB15I TR FAQ

1.How can I place an order for W631GU8NB15I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GU8NB15I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GU8NB15I TR reliable?

The price and inventory of W631GU8NB15I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU8NB15I TR is usually 5 days.

3.What payment methods are accepted for W631GU8NB15I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU8NB15I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GU8NB15I TR?

W631GU8NB15I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GU8NB15I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GU8NB15I TR?

For technical support, including W631GU8NB15I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU8NB15I TR requirements.

6.How does Aetrix verify that W631GU8NB15I TR is sourced from the original manufacturer or authorized distributors?

All W631GU8NB15I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU8NB15I TR meets industry standards.

7.What is the process for return or replacement of W631GU8NB15I TR?

All W631GU8NB15I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU8NB15I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GU8NB15I TR part is unused and in its original packaging.

Return procedure for W631GU8NB15I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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