Winbond Electronics Corporation W631GU8NB-15 TR

Overview

W631GU8NB-15 TR from Winbond is a 1 Gb (128 MB) DDR3L SDRAM organized as 16M × 8 banks × 8 bits, operating at 1333 MT/s with CL=9, tRCD=tRP=9 ns, and 1.35 V nominal supply. It supports industrial temperature range (0°C to 95°C), on-die termination (ODT), ZQ calibration, and programmable CAS Write Latency (CWL=7), targeting memory subsystems in networking edge devices and industrial controllers.

For engineers reviewing the W631GU8NB-15 TR datasheet, W631GU8NB-15 TR pinout, W631GU8NB-15 TR application, or W631GU8NB-15 TR equivalent, key selection criteria include DDR3L-1333 timing compliance (9-9-9), VFBGA-78 package compatibility, 1.35 V low-voltage operation with 1.5 V backward compatibility, and support for write leveling and MPR-based system calibration.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and interleaved burst access. It uses differential CK/CK# inputs for command/address latching and source-synchronous DQS/DQS# strobes aligned to data edges-center-aligned on writes, edge-aligned on reads.

The device supports asynchronous RESET#, programmable additive latency (AL = 0, CL−1, CL−2), dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and auto self-refresh (ASR) for extended temperature operation. Its DLL aligns DQ and DQS transitions to CK, and ZQ calibration adjusts output driver and ODT impedance using an external 240 Ω resistor.

Key Specifications

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm thickness, ball pitch 0.8 mm), RoHS-compliant, window-type BGA with standard DDR3L ball assignment per JEDEC MO-275AC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-15KBL, the W631GU8NB-15 TR offers exact 9-9-9 timing compliance in the standard VFBGA-78 footprint, lower IDD0/IDD1 current draw, and native support for 0–95°C operation without requiring manual ASR configuration-making it optimal for cost-sensitive, thermally constrained industrial designs.

Availability

W631GU8NB-15 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3L memory performance.

Supply support for W631GU8NB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU8NB-15 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-constrained, thermally demanding embedded systems requiring JEDEC-compliant low-voltage memory with industrial temperature support.

FAQ

What is the maximum data rate supported by the W631GU8NB-15 TR?

The W631GU8NB-15 TR supports DDR3L-1333 operation at 1333 MT/s, corresponding to a 667 MHz clock frequency. Its speed grade "-15" is validated for CL=9, tRCD=tRP=9 ns timing, and it remains fully compliant with JEDEC DDR3L standards at this rate. The W631GU8NB-15 TR does not support higher-speed bins such as DDR3L-1600 or DDR3L-1866.

Does the W631GU8NB-15 TR support 1.5 V operation?

Yes, the W631GU8NB-15 TR is backward compatible with 1.5 V DDR3 systems. Its VDD/VDDQ operating range extends from 1.283 V to 1.45 V for DDR3L mode and supports 1.5 V ± 0.075 V (1.425 V to 1.575 V) for legacy DDR3 compatibility. This dual-voltage capability allows seamless integration into existing 1.5 V platforms without hardware modification.

What package type and ball count does the W631GU8NB-15 TR use?

The W631GU8NB-15 TR uses a VFBGA-78 package: a 8 mm × 10.5 mm, 1.0 mm height, window-type ball grid array with 0.8 mm ball pitch and RoHS-compliant lead-free finish. Its 78-ball layout matches JEDEC MO-275AC mechanical specifications and is pin-compatible with other DDR3L SDRAMs in the same footprint.

How does the W631GU8NB-15 TR handle refresh at elevated temperatures?

At case temperatures above 85°C, the W631GU8NB-15 TR requires doubled refresh frequency (tREFI = 3.9 µs instead of 7.8 µs). This is achieved either via Auto Self-Refresh (ASR) enabled through MR2 or Manual Self-Refresh with Extended Temperature Range mode (MR2 A6=0, A7=1). The W631GU8NB-15 TR supports both methods to maintain data retention up to 95°C.

Is write leveling supported on the W631GU8NB-15 TR?

Yes, the W631GU8NB-15 TR fully supports write leveling as defined in JEDEC DDR3L specification. It uses the DQS strobe and internal calibration logic to adjust DQS-to-CK delay in the memory controller, ensuring setup/hold timing margin for write operations at 1333 MT/s. This feature is accessible via mode register MR1 bit A6 and is essential for robust high-speed interface bring-up.