Winbond Electronics Corporation W632GG6KB-11

Overview

W632GG6KB-11 from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1866 (13-13-13) timing, operating at 933 MHz clock frequency with 1.5V VDD/VDDQ supply, and packaged in a 96-ball WBGA (9×13 mm²). It supports CAS Latency 6/8/10/13, programmable CWL, ZQ calibration, and on-die termination for high-speed memory subsystems in networking and industrial computing.

For engineers reviewing the W632GG6KB-11 datasheet, W632GG6KB-11 pinout, W632GG6KB-11 application, or W632GG6KB-11 equivalent, this page delivers verified DDR3-1866 timing parameters, ball-mapped I/O roles, ODT configuration modes, self-refresh current (19 mA), and industrial-grade thermal behavior up to 95°C case temperature - all critical for memory controller interface validation and PCB layout sign-off.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# and DQS/DQS# signaling, and source-synchronous data capture. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization during burst transfers.

The device integrates asynchronous RESET#, dynamic ODT (Rtt_WR), multi-purpose register (MPR) for timing calibration, and write leveling for DQ-DQS skew compensation. Its ZQ calibration uses an external 240Ω resistor to trim output driver and ODT impedance to ±10% accuracy across voltage and temperature.

Key Specifications

Pinout & Package

W632GG6KB-11 is housed in a 96-ball Wafer-Level Ball Grid Array (WBGA) package with 0.8 mm ball pitch, optimized for low-inductance, high-density memory module layouts. Ball assignment follows JEDEC-standard DDR3 pinout with dedicated VDDQ, VSSQ, and VREFDQ rails for signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, W632GG6KB-11 delivers higher bandwidth (1866 vs. 1600 MT/s) and integrated write leveling-critical for FPGA-based controllers-but requires 1.5V supply and lacks −40°C qualification. Its ASR mode enables 95°C operation without manual refresh intervention.

Availability

W632GG6KB-11 is available at Aetrix Electronics and suitable for networking switch buffers, industrial PLC memory, medical imaging frame stores, and video surveillance DVR buffers requiring stable component supply, long-term lifecycle support, and guaranteed DDR3-1866 performance.

Supply support for W632GG6KB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W632GG6KB-11 belongs to Winbond's W632GG series of DDR3 SDRAMs, designed specifically for cost-sensitive, thermally constrained embedded systems requiring JEDEC-compliant high-speed memory with extended temperature capability and robust calibration features.

FAQ

What is the maximum clock frequency supported by W632GG6KB-11?

W632GG6KB-11 supports a maximum clock frequency of 933 MHz, corresponding to DDR3-1866 data rate (1866 MT/s). This is validated under 0°C ≤ TCASE ≤ 95°C with VDD/VDDQ = 1.5 V ± 0.075 V and CL-nRCD-nRP = 13-13-13 timing. The device achieves this using DLL-aligned DQS-to-clock tracking and SSTL_15 I/O compliance.

Does W632GG6KB-11 support write leveling, and how is it implemented?

Yes, W632GG6KB-11 supports write leveling per JEDEC DDR3 specification. It uses the Multi-Purpose Register (MPR) to output a fixed calibration pattern while the memory controller adjusts DQS delay until valid readback occurs. This procedure compensates for DQ-to-DQS skew and is mandatory for reliable operation above 1600 MT/s. The W632GG6KB-11 implements full write leveling protocol including entry, adjustment, and exit sequences.

What is the self-refresh current of W632GG6KB-11, and under what conditions is it measured?

W632GG6KB-11 draws 19 mA in self-refresh mode (IDD6) when operated at TCASE = 0–85°C. At 85–95°C, Auto Self-Refresh (ASR) must be enabled (MR2[7:6] = 10b) to maintain this current level by doubling refresh rate to 3.9 µS intervals. The 19 mA value assumes VDD = VDDQ = 1.5 V and excludes leakage contributions from unused banks.

Can W632GG6KB-11 operate at −40°C, and what speed grades support industrial temperature?

No, W632GG6KB-11 is specified only for 0°C ≤ TCASE ≤ 95°C and does not support −40°C operation. Industrial temperature variants are designated separately: W632GG6KB12I and W632GG6KB15I. These parts carry "I" suffixes, support −40°C to 95°C, and are rated for DDR3-1600 and DDR3-1333 respectively-not DDR3-1866. W632GG6KB-11 itself has no −40°C qualification.

How does ZQ calibration function on W632GG6KB-11, and what external component is required?

W632GG6KB-11 performs ZQ calibration using an external 240 Ω ±1% resistor connected between the ZQ ball and ground. During calibration, internal current sources compare output driver and ODT impedance against this reference, trimming them to match within ±10%. Calibration is initiated via ZQCL command and must be repeated after power-up, temperature shifts >50°C, or voltage changes >5%. The W632GG6KB-11 requires this resistor for stable 34 Ω output drive and ODT termination.