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Winbond Electronics Corporation W632GG6KB-11 TR
- Part No.:
- W632GG6KB-11 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-TFBGA
- Datasheet:
-
W632GG6KB-11 TR.pdf
- Description:
- IC DRAM 2GBIT PAR 96WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,035
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Product details
Overview
W632GG6KB-11 TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM supporting DDR3-1866 speed grade (13-13-13 timing), 1.5V VDD/VDDQ supply, and SSTL_15 interface. It delivers 1866 Mb/sec/pin data rates in systems requiring high-bandwidth memory for embedded controllers, industrial HMIs, and network edge devices.
For engineers reviewing the W632GG6KB-11 TR datasheet, W632GG6KB-11 TR pinout, W632GG6KB-11 TR application, or W632GG6KB-11 TR equivalent, key selection factors include its -11 speed bin compliance with JEDEC DDR3-1866, support for programmable CAS latency (CL = 6/8/10/13), on-die termination (ODT), ZQ calibration, and asynchronous RESET# for robust power-up initialization.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its DLL-aligned DQ/DQS timing ensures precise source-synchronous data capture, while posted CAS with additive latency (AL = 0, CL−1, CL−2) improves command bus efficiency.
The device supports full JEDEC DDR3 features including dynamic ODT (Rtt_WR), write leveling, multi-purpose register (MPR)-based timing calibration, partial array self-refresh (PASR), and auto self-refresh (ASR). All control/address inputs are sampled at the CK/CK# differential crossing point, and I/Os reference DQS/DQS# edges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16M words × 8 banks × 16 bits) |
| Data Rate | DDR3-1866: 1866 Mb/sec/pin (933 MHz clock) |
| CAS Latency | CL = 6, 8, 10, or 13 (JEDEC-compliant timing) |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V (SSTL_15 compatible) |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C (industrial extended range) |
| Package | WBGA-96 (9 mm × 13 mm, RoHS-compliant, lead-free) |
| Refresh Interval | tREFI = 7.8 µs (0–85°C); 3.9 µs (85–95°C with ASR enabled) |
Pinout & Package
W632GG6KB-11 TR uses a 96-ball WBGA package (9 mm × 13 mm) with ball pitch of 0.8 mm. Pin assignments follow JEDEC-standard DDR3 layout optimized for signal integrity and routing density in space-constrained industrial PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Samples all address/control on rising CK/falling CK# crossing; defines system timing reference |
| CKE | Clock Enable | Asynchronous entry/exit from Precharge Power Down and Self-Refresh modes |
| CS# | Chip Select | Active-low enable for command decoding; enables rank-level addressing in multi-RAM systems |
| ODT | On-Die Termination Control | Registers HIGH to activate programmable termination on DQ/DQS/DM lines during reads/writes |
| RESET# | Asynchronous Reset | Initiates power-up initialization sequence; required before first command after power stabilization |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1% resistor to ground for output driver and ODT impedance calibration |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic ODT (Rtt_WR) | Enables selectable termination impedance on DQ/DQS/DM during write bursts to suppress reflections and improve eye margin |
| Write Leveling | Calibrates DQS-to-CK skew per byte lane using MPR read pattern, critical for reliable high-speed write setup/hold timing |
| ZQ Calibration | One-time or periodic calibration of output driver strength and ODT resistance using external 240 Ω reference resistor |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active memory banks, extending battery life in portable applications |
| Programmable CWL | CAS Write Latency set per frequency (CWL = 5/6/7/9) to maintain optimal tDQSS alignment across speed bins |
Applications
| Industrial HMI Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time display rendering and touch response in factory-floor HMIs operating at 95°C ambient. IC Role / Device Role / Timing Role: Primary working memory interfacing with ARM Cortex-A9 SoC via 16-bit DDR3 bus. Use Value: PASR and extended temperature support reduce self-refresh current by 42% and ensure stable operation up to 95°C without derating. | Use Scenario: Packet buffering and forwarding table storage in fanless enterprise edge routers. IC Role / Device Role / Timing Role: High-throughput buffer memory synchronized to 933 MHz DDR3-1866 interface. Use Value: Dynamic ODT and write leveling maintain >85% data eye opening at 1866 Mb/sec under varying trace lengths and load conditions. |
| Medical Imaging Gateways | Automated Test Equipment (ATE) |
Use Scenario: DICOM image preprocessing pipeline requiring burst-intensive memory access with low-latency responsiveness. IC Role / Device Role / Timing Role: Low-latency working memory for FPGA-accelerated image filtering engines. Use Value: CL=8 and AL=0 configuration achieves 13.75 ns tAA, enabling sub-14 ns read access to support real-time pixel processing. | Use Scenario: High-speed digital pattern memory in automated test instruments with strict jitter and timing margin requirements. IC Role / Device Role / Timing Role: Timing-critical waveform storage accessed via deterministic DDR3 controller with calibrated DQS alignment. Use Value: MPR-based calibration and DLL-off mode support precise timing validation across temperature and voltage corners. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16HA-125:A | 1.35V DDR3L, 1600 MT/s max, 96-ball FBGA, no PASR support | Lower power but lacks extended temperature support and PASR; requires voltage regulator change | Select only if system uses DDR3L infrastructure and operates ≤85°C |
| IS43TR16128B-125KBL | 1.5V DDR3, 1600 MT/s, 96-ball WBGA, supports CL=7/9 but not CL=13 | Same package footprint but limited CL range and no write leveling; lower max speed | Acceptable for cost-sensitive designs where 1600 MT/s suffices and calibration simplicity is prioritized |
Compared with MT41K128M16HA-125:A and IS43TR16128B-125KBL, W632GG6KB-11 TR uniquely combines DDR3-1866 performance, 95°C operation, PASR, and write leveling - making it the only option for thermally constrained, high-throughput industrial applications requiring full JEDEC DDR3-1866 compliance.
Availability
W632GG6KB-11 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GG6KB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GG6KB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC compliance, and advanced power management features like PASR and ASR.
FAQ
What is the maximum data rate supported by W632GG6KB-11 TR?
W632GG6KB-11 TR supports DDR3-1866 operation at 933 MHz clock frequency, delivering 1866 Mb/sec/pin. This is validated under JEDEC-compliant conditions with CL=13, tRCD/tRP=13 ns, and VDD/VDDQ=1.5 V ± 0.075 V. The -11 speed grade guarantees full AC/DC specifications across 0°C to 95°C case temperature when used with appropriate thermal design and ASR-enabled refresh for >85°C operation.
Does W632GG6KB-11 TR support on-die termination (ODT)?
Yes, W632GG6KB-11 TR supports both synchronous and dynamic ODT. ODT can be enabled via the ODT pin and configured through MR1 (RTT_NOM) and MR2 (Rtt_WR) to apply termination to DQ, DQS/DQS#, and DM signals. Dynamic ODT allows runtime switching of termination values during write operations to optimize signal integrity without requiring board-level resistors.
How does the RESET# pin function in W632GG6KB-11 TR?
The RESET# pin in W632GG6KB-11 TR is asynchronous and initiates the power-up initialization sequence. It must be held LOW until VDD, VDDQ, VREFCA, and VREFDQ stabilize, then pulsed HIGH to begin JEDEC-compliant training. Unlike standard DDR3, W632GG6KB-11 TR requires RESET# assertion before any command - including MRS writes - ensuring deterministic state entry after power-on or brownout recovery.
What package type and ball count does W632GG6KB-11 TR use?
W632GG6KB-11 TR uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package measuring 9 mm × 13 mm with 0.8 mm ball pitch. It is RoHS-compliant and lead-free. The ball map follows JEDEC-standard DDR3 layout, including dedicated ZQ, VREFCA, VREFDQ, and differential clock/strobe balls - verified in the official Winbond datasheet revision A06.
Can W632GG6KB-11 TR operate reliably at 95°C case temperature?
Yes, W632GG6KB-11 TR is rated for 0°C ≤ TCASE ≤ 95°C and maintains full JEDEC AC/DC specifications across this range when Auto Self-Refresh (ASR) is enabled (MR2[7:6] = 10b) and tREFI is reduced to 3.9 µS. This requires doubling refresh commands and is explicitly validated in the datasheet for the -11 speed grade - distinguishing it from commercial-grade DDR3 parts limited to 85°C.
W632GG6KB-11 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-WBGA (9x13)
W632GG6KB-11 TR FAQ
1.How can I place an order for W632GG6KB-11 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG6KB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG6KB-11 TR reliable?
The price and inventory of W632GG6KB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6KB-11 TR is usually 5 days.
3.What payment methods are accepted for W632GG6KB-11 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6KB-11 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG6KB-11 TR?
W632GG6KB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG6KB-11 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG6KB-11 TR?
For technical support, including W632GG6KB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6KB-11 TR requirements.
6.How does Aetrix verify that W632GG6KB-11 TR is sourced from the original manufacturer or authorized distributors?
All W632GG6KB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6KB-11 TR meets industry standards.
7.What is the process for return or replacement of W632GG6KB-11 TR?
All W632GG6KB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6KB-11 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG6KB-11 TR part is unused and in its original packaging.
Return procedure for W632GG6KB-11 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG6KB-11 TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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