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Winbond Electronics Corporation W632GG6KB12I

Part No.:
W632GG6KB12I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-TFBGA
Datasheet:
AetrixW632GG6KB12I.pdf
Description:
IC DRAM 2GBIT 96-WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,018

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Product details

Overview

W632GG6KB12I from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3 SDRAM supporting DDR3-1600 speed grade (11-11-11), 1.5 V core/interface supply, industrial temperature range (−40°C to +95°C), and SSTL_15 I/O interface. It delivers 12.8 GB/s peak bandwidth across 16 data pins and is used in embedded computing, network edge devices, and industrial control systems requiring reliable memory with extended thermal operation.

For engineers reviewing the W632GG6KB12I datasheet, W632GG6KB12I pinout, W632GG6KB12I application, or W632GG6KB12I equivalent, key selection considerations include its −40°C to +95°C industrial qualification, programmable CAS Write Latency (CWL = 5–8), on-die termination (ODT) with dynamic Rtt_WR support, and ZQ calibration for output driver and ODT impedance tuning.

Technical Context

This DDR3 SDRAM implements an 8-bank architecture with 8-bit prefetch, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and multi-purpose register (MPR)-assisted system timing calibration.

Functional features include asynchronous RESET# for power-up initialization, programmable partial array self-refresh (PASR), auto self-refresh (ASR) for extended temperature operation, and dynamic ODT mode enabling write-time termination switching between Rtt_Nom and Rtt_WR values without command overhead.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (16,777,216 words × 8 banks × 16 bits)
Data RateDDR3-1600: 800 MHz clock → 1600 MT/s per pin
Operating VoltageVDD/VDDQ = 1.5 V ± 0.075 V - requires tight regulation for signal integrity
CAS Latency (CL)Supports CL = 6, 7, 8, 9, 10, 11 - determines tAA min (13.75 ns at CL=11)
CAS Write Latency (CWL)Programmable CWL = 5–8 - sets write latency WL = AL + CWL
Temperature RangeIndustrial: −40°C ≤ TCASE ≤ 95°C - validated with doubled refresh at 85–95°C
PackageWBGA-96 (9 mm × 13 mm, 0.8 mm pitch) - RoHS-compliant, lead-free
Interface StandardSSTL_15 - mandates matched 15 Ω driver impedance and 34 Ω ODT options

Pinout & Package

W632GG6KB12I uses a 96-ball WBGA package (9 mm × 13 mm, 0.8 mm pitch) with ball grid layout optimized for DDR3 routing, including dedicated VDDQ/VSSQ pairs adjacent to DQ groups and separate VREFCA/VREFDQ reference pins.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputLatches all address/control on cross-point; defines timing reference for all operations
DQS / DQS#Differential data strobeSource-synchronous read/write strobe; edge-aligned on reads, center-aligned on writes
ODTOn-die termination controlRegistered input enabling/disabling internal termination on DQ/DQS/DM pins
RESET#Asynchronous resetActive-low signal initiating power-up initialization sequence and functional reset
ZQCalibration referenceConnects to external 240 Ω ±1 % resistor to ground for output driver and ODT impedance tuning
VREFCA / VREFDQReference voltage inputsProvide 0.5 × VDD reference for command/address and data input receivers respectively

Key Features

FeatureDesign Value
Dynamic ODT (Rtt_WR)Enables runtime switching of termination resistance during write bursts to reduce stub reflections and improve write eye margin
ZQ CalibrationOne-time or periodic calibration using external 240 Ω resistor ensures ±5 % output driver and ODT impedance accuracy over voltage/temperature
Write Leveling SupportHardware-assisted timing alignment between DQS and CK via MPR read pattern and DRAM-controlled delay adjustment
Partial Array Self-Refresh (PASR)Reduces self-refresh current up to 50 % by refreshing only active banks - critical for low-power industrial standby modes
Multi-Purpose Register (MPR)Provides predefined bit pattern for system-level timing calibration without disturbing memory contents or requiring data bus access
Extended Temperature ASR ModeMR2 A6=1 enables Auto Self-Refresh at 85–95°C with tREFI = 3.9 µs - eliminates need for host-initiated refresh at high case temperatures

Applications

Industrial PLC MemoryNetwork Edge Router Buffer

Use Scenario: Programmable logic controller operating continuously in factory environments with ambient temperatures from −40°C to +85°C.

IC Role / Device Role / Timing Role: Main working memory storing ladder logic execution state, I/O mapping tables, and real-time process variables.

Use Value: W632GG6KB12I's industrial temperature rating and PASR capability reduce system power draw during idle cycles while maintaining JEDEC compliance at full speed.

Use Scenario: Layer 3 packet forwarding engine in compact carrier-grade edge router handling 10 Gbps line-rate traffic.

IC Role / Device Role / Timing Role: Packet buffer memory interfacing directly with MAC-layer SerDes PHYs via DDR3 controller with write leveling enabled.

Use Value: W632GG6KB12I's dynamic ODT and ZQ calibration ensure signal integrity across 16-bit wide, 1600 MT/s links routed on dense 6-layer PCBs with multiple memory ranks.

Medical Imaging Control UnitAutomated Test Equipment (ATE)

Use Scenario: Embedded control module in ultrasound or MRI console managing sensor acquisition, image reconstruction, and display buffering.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting burst-intensive DMA transfers between FPGA-accelerated processing blocks and display controllers.

Use Value: W632GG6KB12I's 1600 MT/s data rate and 8-bank concurrency enable sustained >10 GB/s read/write throughput required for real-time volumetric rendering.

Use Scenario: Modular test head in semiconductor ATE platform performing parallel device characterization across 32 DUTs.

IC Role / Device Role / Timing Role: Pattern memory storing stimulus vectors and expected response signatures, accessed via high-speed DDR3 controller with precise tRCD/tRP timing control.

Use Value: W632GG6KB12I's programmable CL/CWL and AL settings allow fine-grained timing optimization for deterministic test vector delivery under varying load conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K128M16HA-125:ESame density (2 Gb), same 96-ball FBGA, but supports DDR3L (1.35 V) and has different AC timing (tRCD = 13.75 ns vs. 13.75 ns), no industrial temp optionTargeted at low-power client platforms; lacks −40°C to +95°C qualification and ASR mode for 85–95°C operationSelect only if system operates within 0–85°C and can adopt DDR3L voltage scaling
IS43TR16256B-125KBL2 Gb DDR3, 96-ball WBGA, industrial temp (−40°C to +95°C), but rated only for DDR3-1333 (667 MHz) - lower bandwidth and higher tAA/tRCDSuitable for cost-sensitive industrial designs where 10.6 GB/s peak bandwidth suffices and thermal margin is prioritized over speedChoose when design constraints require guaranteed −40°C startup and relaxed timing margins, accepting 30 % lower bandwidth than W632GG6KB12I

Compared with MT41K128M16HA-125:E and IS43TR16256B-125KBL, W632GG6KB12I uniquely combines DDR3-1600 speed, industrial temperature range, and ASR-enabled 95°C operation - making it the only option among the three qualified for high-throughput embedded systems deployed in uncontrolled thermal environments.

Availability

W632GG6KB12I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical electronics, and test equipment requiring stable component supply with long-term lifecycle assurance.

Supply support for W632GG6KB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W632GG6KB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, robust signal integrity, and JEDEC-compliant reliability in harsh environments.

FAQ

What is the maximum operating frequency supported by W632GG6KB12I?

W632GG6KB12I is rated for DDR3-1600 operation, corresponding to a maximum clock frequency of 800 MHz and data transfer rate of 1600 MT/s. Its tCK(AVG) minimum is 1.875 ns at CL=8/CWL=6, and it supports stable operation across the full industrial temperature range (−40°C to +95°C) when configured per JEDEC DDR3 specification and Winbond's extended-temperature ASR mode.

Does W632GG6KB12I support dynamic on-die termination (ODT)?

Yes, W632GG6KB12I supports dynamic ODT (Rtt_WR) as defined in MR2. When enabled, it allows runtime switching of termination resistance on DQ/DQS/DM pins during write operations - improving signal integrity on high-speed traces without requiring additional command overhead. This feature is confirmed in Section 8.19.3 of the datasheet and applies directly to the W632GG6KB12I variant.

What package type and ball count does W632GG6KB12I use?

W632GG6KB12I uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package measuring 9 mm × 13 mm with 0.8 mm ball pitch. The ball map is documented in Section 5 of the datasheet and includes dedicated VDDQ/VSSQ pairs, dual VREF inputs (VREFCA/VREFDQ), and ZQ calibration pin - all consistent across the W632GG6KB family including the W632GG6KB12I speed grade.

How does W632GG6KB12I handle refresh at elevated temperatures (85–95°C)?

At case temperatures above 85°C, W632GG6KB12I requires either Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0, A7 = 1) or Auto Self-Refresh (ASR) mode (MR2 A6 = 1). Both methods mandate doubling the refresh frequency to tREFI = 3.9 µS (vs. 7.8 µS at ≤85°C), ensuring data retention integrity. This behavior is explicitly specified for the "12I" industrial grade in Section 4 notes.

Is write leveling supported on W632GG6KB12I, and how is it implemented?

Yes, W632GG6KB12I supports hardware-assisted write leveling per JEDEC DDR3 standard. It uses the Multi-Purpose Register (MPR) to output a fixed calibration pattern while the memory controller adjusts DQS delay until valid readback occurs. The procedure is fully documented in Section 8.9 and applies identically to all W632GG6KB variants, including W632GG6KB12I.

W632GG6KB12I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-TFBGA
Packaging:
Tray
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
-
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-WBGA (9x13)

W632GG6KB12I FAQ

1.How can I place an order for W632GG6KB12I through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GG6KB12I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GG6KB12I reliable?

The price and inventory of W632GG6KB12I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6KB12I is usually 5 days.

3.What payment methods are accepted for W632GG6KB12I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6KB12I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GG6KB12I?

W632GG6KB12I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GG6KB12I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GG6KB12I?

For technical support, including W632GG6KB12I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6KB12I requirements.

6.How does Aetrix verify that W632GG6KB12I is sourced from the original manufacturer or authorized distributors?

All W632GG6KB12I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6KB12I meets industry standards.

7.What is the process for return or replacement of W632GG6KB12I?

All W632GG6KB12I units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6KB12I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GG6KB12I part is unused and in its original packaging.

Return procedure for W632GG6KB12I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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