Winbond Electronics Corporation W632GG6KB12I
- Part No.:
- W632GG6KB12I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-TFBGA
- Datasheet:
-
W632GG6KB12I.pdf
- Description:
- IC DRAM 2GBIT 96-WBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,018
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W632GG6KB12I from Winbond is a 2 Gb (16M × 8 banks × 16-bit) DDR3 SDRAM supporting DDR3-1600 speed grade (11-11-11), 1.5 V core/interface supply, industrial temperature range (−40°C to +95°C), and SSTL_15 I/O interface. It delivers 12.8 GB/s peak bandwidth across 16 data pins and is used in embedded computing, network edge devices, and industrial control systems requiring reliable memory with extended thermal operation.
For engineers reviewing the W632GG6KB12I datasheet, W632GG6KB12I pinout, W632GG6KB12I application, or W632GG6KB12I equivalent, key selection considerations include its −40°C to +95°C industrial qualification, programmable CAS Write Latency (CWL = 5–8), on-die termination (ODT) with dynamic Rtt_WR support, and ZQ calibration for output driver and ODT impedance tuning.
Technical Context
This DDR3 SDRAM implements an 8-bank architecture with 8-bit prefetch, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and multi-purpose register (MPR)-assisted system timing calibration.
Functional features include asynchronous RESET# for power-up initialization, programmable partial array self-refresh (PASR), auto self-refresh (ASR) for extended temperature operation, and dynamic ODT mode enabling write-time termination switching between Rtt_Nom and Rtt_WR values without command overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16,777,216 words × 8 banks × 16 bits) |
| Data Rate | DDR3-1600: 800 MHz clock → 1600 MT/s per pin |
| Operating Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - requires tight regulation for signal integrity |
| CAS Latency (CL) | Supports CL = 6, 7, 8, 9, 10, 11 - determines tAA min (13.75 ns at CL=11) |
| CAS Write Latency (CWL) | Programmable CWL = 5–8 - sets write latency WL = AL + CWL |
| Temperature Range | Industrial: −40°C ≤ TCASE ≤ 95°C - validated with doubled refresh at 85–95°C |
| Package | WBGA-96 (9 mm × 13 mm, 0.8 mm pitch) - RoHS-compliant, lead-free |
| Interface Standard | SSTL_15 - mandates matched 15 Ω driver impedance and 34 Ω ODT options |
Pinout & Package
W632GG6KB12I uses a 96-ball WBGA package (9 mm × 13 mm, 0.8 mm pitch) with ball grid layout optimized for DDR3 routing, including dedicated VDDQ/VSSQ pairs adjacent to DQ groups and separate VREFCA/VREFDQ reference pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Latches all address/control on cross-point; defines timing reference for all operations |
| DQS / DQS# | Differential data strobe | Source-synchronous read/write strobe; edge-aligned on reads, center-aligned on writes |
| ODT | On-die termination control | Registered input enabling/disabling internal termination on DQ/DQS/DM pins |
| RESET# | Asynchronous reset | Active-low signal initiating power-up initialization sequence and functional reset |
| ZQ | Calibration reference | Connects to external 240 Ω ±1 % resistor to ground for output driver and ODT impedance tuning |
| VREFCA / VREFDQ | Reference voltage inputs | Provide 0.5 × VDD reference for command/address and data input receivers respectively |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic ODT (Rtt_WR) | Enables runtime switching of termination resistance during write bursts to reduce stub reflections and improve write eye margin |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor ensures ±5 % output driver and ODT impedance accuracy over voltage/temperature |
| Write Leveling Support | Hardware-assisted timing alignment between DQS and CK via MPR read pattern and DRAM-controlled delay adjustment |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50 % by refreshing only active banks - critical for low-power industrial standby modes |
| Multi-Purpose Register (MPR) | Provides predefined bit pattern for system-level timing calibration without disturbing memory contents or requiring data bus access |
| Extended Temperature ASR Mode | MR2 A6=1 enables Auto Self-Refresh at 85–95°C with tREFI = 3.9 µs - eliminates need for host-initiated refresh at high case temperatures |
Applications
| Industrial PLC Memory | Network Edge Router Buffer |
|---|---|
Use Scenario: Programmable logic controller operating continuously in factory environments with ambient temperatures from −40°C to +85°C. IC Role / Device Role / Timing Role: Main working memory storing ladder logic execution state, I/O mapping tables, and real-time process variables. Use Value: W632GG6KB12I's industrial temperature rating and PASR capability reduce system power draw during idle cycles while maintaining JEDEC compliance at full speed. | Use Scenario: Layer 3 packet forwarding engine in compact carrier-grade edge router handling 10 Gbps line-rate traffic. IC Role / Device Role / Timing Role: Packet buffer memory interfacing directly with MAC-layer SerDes PHYs via DDR3 controller with write leveling enabled. Use Value: W632GG6KB12I's dynamic ODT and ZQ calibration ensure signal integrity across 16-bit wide, 1600 MT/s links routed on dense 6-layer PCBs with multiple memory ranks. |
| Medical Imaging Control Unit | Automated Test Equipment (ATE) |
Use Scenario: Embedded control module in ultrasound or MRI console managing sensor acquisition, image reconstruction, and display buffering. IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting burst-intensive DMA transfers between FPGA-accelerated processing blocks and display controllers. Use Value: W632GG6KB12I's 1600 MT/s data rate and 8-bank concurrency enable sustained >10 GB/s read/write throughput required for real-time volumetric rendering. | Use Scenario: Modular test head in semiconductor ATE platform performing parallel device characterization across 32 DUTs. IC Role / Device Role / Timing Role: Pattern memory storing stimulus vectors and expected response signatures, accessed via high-speed DDR3 controller with precise tRCD/tRP timing control. Use Value: W632GG6KB12I's programmable CL/CWL and AL settings allow fine-grained timing optimization for deterministic test vector delivery under varying load conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16HA-125:E | Same density (2 Gb), same 96-ball FBGA, but supports DDR3L (1.35 V) and has different AC timing (tRCD = 13.75 ns vs. 13.75 ns), no industrial temp option | Targeted at low-power client platforms; lacks −40°C to +95°C qualification and ASR mode for 85–95°C operation | Select only if system operates within 0–85°C and can adopt DDR3L voltage scaling |
| IS43TR16256B-125KBL | 2 Gb DDR3, 96-ball WBGA, industrial temp (−40°C to +95°C), but rated only for DDR3-1333 (667 MHz) - lower bandwidth and higher tAA/tRCD | Suitable for cost-sensitive industrial designs where 10.6 GB/s peak bandwidth suffices and thermal margin is prioritized over speed | Choose when design constraints require guaranteed −40°C startup and relaxed timing margins, accepting 30 % lower bandwidth than W632GG6KB12I |
Compared with MT41K128M16HA-125:E and IS43TR16256B-125KBL, W632GG6KB12I uniquely combines DDR3-1600 speed, industrial temperature range, and ASR-enabled 95°C operation - making it the only option among the three qualified for high-throughput embedded systems deployed in uncontrolled thermal environments.
Availability
W632GG6KB12I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical electronics, and test equipment requiring stable component supply with long-term lifecycle assurance.
Supply support for W632GG6KB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W632GG6KB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, robust signal integrity, and JEDEC-compliant reliability in harsh environments.
FAQ
What is the maximum operating frequency supported by W632GG6KB12I?
W632GG6KB12I is rated for DDR3-1600 operation, corresponding to a maximum clock frequency of 800 MHz and data transfer rate of 1600 MT/s. Its tCK(AVG) minimum is 1.875 ns at CL=8/CWL=6, and it supports stable operation across the full industrial temperature range (−40°C to +95°C) when configured per JEDEC DDR3 specification and Winbond's extended-temperature ASR mode.
Does W632GG6KB12I support dynamic on-die termination (ODT)?
Yes, W632GG6KB12I supports dynamic ODT (Rtt_WR) as defined in MR2. When enabled, it allows runtime switching of termination resistance on DQ/DQS/DM pins during write operations - improving signal integrity on high-speed traces without requiring additional command overhead. This feature is confirmed in Section 8.19.3 of the datasheet and applies directly to the W632GG6KB12I variant.
What package type and ball count does W632GG6KB12I use?
W632GG6KB12I uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package measuring 9 mm × 13 mm with 0.8 mm ball pitch. The ball map is documented in Section 5 of the datasheet and includes dedicated VDDQ/VSSQ pairs, dual VREF inputs (VREFCA/VREFDQ), and ZQ calibration pin - all consistent across the W632GG6KB family including the W632GG6KB12I speed grade.
How does W632GG6KB12I handle refresh at elevated temperatures (85–95°C)?
At case temperatures above 85°C, W632GG6KB12I requires either Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0, A7 = 1) or Auto Self-Refresh (ASR) mode (MR2 A6 = 1). Both methods mandate doubling the refresh frequency to tREFI = 3.9 µS (vs. 7.8 µS at ≤85°C), ensuring data retention integrity. This behavior is explicitly specified for the "12I" industrial grade in Section 4 notes.
Is write leveling supported on W632GG6KB12I, and how is it implemented?
Yes, W632GG6KB12I supports hardware-assisted write leveling per JEDEC DDR3 standard. It uses the Multi-Purpose Register (MPR) to output a fixed calibration pattern while the memory controller adjusts DQS delay until valid readback occurs. The procedure is fully documented in Section 8.9 and applies identically to all W632GG6KB variants, including W632GG6KB12I.
W632GG6KB12I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-TFBGA
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- -
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-WBGA (9x13)
W632GG6KB12I FAQ
1.How can I place an order for W632GG6KB12I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GG6KB12I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GG6KB12I reliable?
The price and inventory of W632GG6KB12I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GG6KB12I is usually 5 days.
3.What payment methods are accepted for W632GG6KB12I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GG6KB12I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GG6KB12I?
W632GG6KB12I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GG6KB12I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GG6KB12I?
For technical support, including W632GG6KB12I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GG6KB12I requirements.
6.How does Aetrix verify that W632GG6KB12I is sourced from the original manufacturer or authorized distributors?
All W632GG6KB12I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GG6KB12I meets industry standards.
7.What is the process for return or replacement of W632GG6KB12I?
All W632GG6KB12I units undergo pre-shipment inspection (PSI). If there is an issue with W632GG6KB12I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GG6KB12I part is unused and in its original packaging.
Return procedure for W632GG6KB12I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GG6KB12I Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
