Winbond Electronics Corporation W632GG6KB12I TR

Overview

W632GG6KB12I TR from Winbond is a 2Gb (16M × 8 banks × 16-bit) DDR3 SDRAM supporting DDR3-1600 speed grade (11-11-11), 1.5V VDD/VDDQ supply, industrial temperature range (−40°C to +95°C), and SSTL_15 interface - deployed in embedded computing, network edge devices, and industrial HMIs requiring reliable high-bandwidth memory with extended thermal operation.

For engineers reviewing the W632GG6KB12I TR datasheet, W632GG6KB12I TR pinout, W632GG6KB12I TR application, or W632GG6KB12I TR equivalent, key selection considerations include its industrial-grade timing compliance (tRCD/tRP = 13.75 ns min), programmable CAS Write Latency (CWL = 5–8), dynamic ODT support, and WBGA-96 (9×13 mm²) RoHS-compliant packaging.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O synchronized to CK/CK#. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization during burst transfers.

Functional features include asynchronous RESET# for power-up initialization, ZQ calibration for output driver and ODT impedance tuning using an external 240Ω resistor, multi-purpose register (MPR) for system-level timing calibration, and write leveling for per-DQ skew compensation - all compliant with JEDEC DDR3 standard JESD79-3F.

Key Specifications

Pinout & Package

W632GG6KB12I TR uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package measuring 9 mm × 13 mm with 0.8 mm ball pitch. The package supports fine-pitch layout, low inductance, and thermal performance suitable for industrial and embedded applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16HA-125:E and IS43TR16256B-125KBL, W632GG6KB12I TR uniquely combines industrial temperature compliance, PASR/ASR power optimization, and full JEDEC DDR3-1600 timing - making it preferred for thermally constrained, battery-aware, or long-lifecycle embedded deployments.

Availability

W632GG6KB12I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, embedded vision controllers, ruggedized data acquisition units, and other applications requiring stable component supply with guaranteed long-term availability and consistent parametric performance.

Supply support for W632GG6KB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM - with strong focus on industrial, automotive, and communications markets.

W632GG6KB12I TR belongs to Winbond's DDR3 SDRAM product line, designed specifically for embedded systems demanding industrial temperature resilience, JEDEC-compliant timing rigor, and advanced power management features like PASR and ASR.

FAQ

What is the maximum operating frequency supported by W632GG6KB12I TR?

W632GG6KB12I TR supports DDR3-1600 operation with a maximum clock frequency of 800 MHz (tCK = 1.25 ns). Its speed grade (-12I) guarantees full JEDEC AC/DC specifications at this rate within the industrial temperature range (−40°C to +95°C), including tRCD and tRP minimums of 13.75 ns.

Does W632GG6KB12I TR support both synchronous and dynamic ODT modes?

Yes, W632GG6KB12I TR supports both synchronous ODT (via ODT pin and MR1 configuration) and dynamic ODT (Rtt_WR via MR2). Dynamic ODT allows on-the-fly termination activation during write operations only, improving signal integrity without affecting read paths - a key advantage over basic synchronous-only implementations.

How does the write leveling function work in W632GG6KB12I TR?

W632GG6KB12I TR implements JEDEC-standard write leveling using its Multi-Purpose Register (MPR). When enabled, the DRAM outputs a fixed 0x00000000 pattern on DQ while the controller adjusts per-DQS delay until DQS edge aligns with DQ valid window - ensuring setup/hold margin at DDR3-1600 speeds. This calibration is performed once per power cycle.

What is the purpose of the ZQ pin on W632GG6KB12I TR?

The ZQ pin on W632GG6KB12I TR connects to a 240Ω ±1% external resistor to ground and enables factory-trimmed calibration of output driver impedance and on-die termination (ODT) values. ZQ calibration commands (ZQCL and ZQCS) must be issued after power-up and periodically during operation to compensate for voltage/temperature drift - critical for maintaining signal integrity.

Can W632GG6KB12I TR operate reliably at 95°C case temperature?

Yes, W632GG6KB12I TR is explicitly qualified for −40°C ≤ TCASE ≤ 95°C with full JEDEC AC/DC specification compliance. At 95°C, Auto Self-Refresh (ASR) must be enabled (MR2 A6 = 1) to double refresh rate (tREFI = 3.9 µS), or Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0, A7 = 1) must be used - both supported in the device's mode register configuration.